DATA SHEET
NPN SILICON RF TRANSISTOR
2SC4571
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR UHF TUNER OSC/MIX
3-PIN SUPER MINIMOLD
DESCRIPTION
The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX.
It is suitable for a high density surface mount assembly since the transistor has been applied super minimold
package.
FEATURES
• High Gain Bandwidth Product
f
T
= 5.0 GHz TYP. @ V
CE
= 5 V, I
C
= 5 mA, f = 1 GHz
• Low Output Capacitance
C
ob
= 0.9 pF TYP. @ V
CB
= 5 V, I
E
= 0 mA, f = 1 MHz
• 3-pin super minimold Package
ORDERING INFORMATION
Part Number
2SC4571
2SC4571-T1
Quantity
50 pcs (Non reel)
3 kpcs/reel
• 8 mm wide embossed taping
• Pin 3 (collector) face to perforation side of the tape
Supplying Form
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
20
12
3
60
120
125
−55
to +125
Unit
V
V
V
mA
mW
°C
°C
T
j
T
stg
Note
Free air
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10513EJ01V0DS (1st edition)
(Previous No. P10409EJ2V0DS00)
Date Published October 2004 CP(K)
Printed in Japan
The mark
shows major revised points.
©
NEC Compound Semiconductor Devices, Ltd. 1993, 2004
2SC4571
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
Collector Saturation Voltage
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Output Capacitance
f
T
S
21e
C
ob
2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
I
CBO
I
EBO
V
CE(sat)
h
FE
Note 1
V
CB
= 15 V, I
E
= 0 mA
V
EB
= 1 V, I
C
= 0 mA
h
FE
= 10, I
C
= 5 mA
V
CE
= 5 V, I
C
= 5 mA
−
−
−
40
−
−
−
100
100
100
0.5
200
nA
nA
V
−
V
CE
= 5 V, I
C
= 5 mA, f = 1.0 GHz
V
CE
= 5 V, I
C
= 5 mA, f = 1.0 GHz
V
CB
= 5 V, I
E
= 0 mA, f = 1.0 MHz
−
5.0
−
5.0
−
0.9
–
−
1.2
GHz
dB
pF
Note 2
Notes 1.
Pulse measurement: PW
≤
350
µ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance when the emitter grounded
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
T75
T75
40 to 80
T76
T76
60 to 120
T77
T77
100 to 200
2
Data Sheet PU10513EJ01V0DS
2SC4571
TYPICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
150
2.0
OUTPUT CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
f = 1 MHz
1.0
0.7
0.5
Total Power Dissipation P
tot
(mW)
100
50
Output Capacitance C
ob
(pF)
120 mW
Free Air
0.2
0.1
0
50
100
150
1
2
5
7
10
20
Ambient Temperature T
A
(˚C)
Collector to Base Voltage V
CB
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
24
V
CE
= 5 V
30
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
I
B
= 120
µ
A
Collector Current I
C
(mA)
Collector Current I
C
(mA)
100
µ
A
20
80
µ
A
60
µ
A
10
40
µ
A
20
µ
A
16
8
0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
10
Base to Emitter Voltage V
BE
(V)
Collector to Emitter Voltage V
CE
(V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
8
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Gain Bandwidth Product f
T
(GHz)
f = 1 GHz
V
CE
= 5 V
6
V
CE
= 3 V
V
CE
= 5 V
DC Current Gain h
FE
100
50
4
20
2
10
0.5
1
2
5
10
20
50
0
0.5
1
3
5 7 10
30
50
90
Collector Current I
C
(mA)
Collector Current I
C
(mA)
Remark
The graphs indicate nominal characteristics.
Data Sheet PU10513EJ01V0DS
3
2SC4571
INSERTION POWER GAIN
vs. FREQUENCY
25
Insertion Power Gain |S
21e
|
2
(dB)
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
16
Insertion Power Gain |S
21e
|
2
(dB)
I
C
= 5 mA
20
f = 1 GHz
12
V
CE
= 5 V
15
V
CE
= 5 V
V
CE
= 3 V
8
10
V
CE
= 3 V
5
0
0.1
4
0.2
0.5
1.0
2.0
5.0
0
0.5
1
2
5
10
20
50
Frequency f (GHz)
Collector Current I
C
(mA)
Remark
The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave]
→
[Device Parameters]
URL http://www.ncsd.necel.com/
4
Data Sheet PU10513EJ01V0DS
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