DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D252
BGD902L
860 MHz, 18.5 dB gain power
doubler amplifier
Product specification
Supersedes data of 1999 Aug 17
2001 Oct 30
Philips Semiconductors
Product specification
860 MHz, 18.5 dB gain power doubler amplifier
FEATURES
•
Excellent linearity
•
Extremely low noise
•
Excellent return loss properties
•
Silicon nitride passivation
•
Rugged construction
•
Gold metallization ensures excellent reliability
•
Low DC current consumption.
APPLICATIONS
•
CATV systems operating in the 40 to 900 MHz
frequency range.
DESCRIPTION
Hybrid amplifier module in a SOT115J package operating
with a supply voltage of 24 V.
Side view
BGD902L
PINNING - SOT115J
PIN
1
2
3
5
7
8
9
input
common
common
+V
B
common
common
output
DESCRIPTION
handbook, halfpage
1
2
3
5
7
8
9
MSA319
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL
G
p
I
tot
power gain
total current consumption (DC)
PARAMETER
CONDITIONS
f = 50 MHz
f = 900 MHz
V
B
= 24 V
MIN.
18.2
19
350
MAX.
18.8
20
380
UNIT
dB
dB
mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
B
V
i
T
stg
T
mb
supply voltage
RF input voltage
storage temperature
operating mounting base temperature
PARAMETER
−
−
−40
−20
MIN.
MAX.
30
70
+100
+100
V
dBmV
°C
°C
UNIT
2001 Oct 30
2
Philips Semiconductors
Product specification
860 MHz, 18.5 dB gain power doubler amplifier
CHARACTERISTICS
Bandwidth 40 to 900 MHz; V
B
= 24 V; T
mb
= 35
°C;
Z
S
= Z
L
= 75
Ω.
SYMBOL
G
p
SL
FL
S
11
PARAMETER
power gain
slope straight line
flatness straight line
input return losses
CONDITIONS
f = 50 MHz
f = 900 MHz
f = 40 to 900 MHz
f = 40 to 900 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 650 MHz
f = 650 to 900 MHz
S
22
output return losses
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 750 MHz
f = 750 to 900 MHz
S
21
CTB
phase response
composite triple beat
f = 50 MHz
49 channels flat; V
o
= 47 dBmV;
f
m
= 859.25 MHz
77 channels flat; V
o
= 44 dBmV;
f
m
= 547.25 MHz
110 channels flat; V
o
= 44 dBmV;
f
m
= 745.25 MHz
129 channels flat; V
o
= 44 dBmV;
f
m
= 859.25 MHz
110 channels; f
m
= 445.25 MHz;
V
o
= 49 dBmV at 550 MHz; note 1
MIN.
18.2
19
0.4
−
21
22
22
19
18
25
25
21
20
19
−45
−
−
−
−
−
TYP.
18.5
19.5
0.9
±0.15
24
26
28
22
21
32
33
29
22
22
−
−66.5
−68
−61.5
−58
−62
−56
−64.5
−67.5
−64
−62.5
−60.5
−58
BGD902L
MAX.
18.8
20
1.4
±0.3
−
−
−
−
−
−
−
−
−
−
+45
−65
−66
−60
−56
−60
−53.5
−62
−65
−61.5
−60
−58
−55
UNIT
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
129 channels; f
m
= 697.25 MHz;
−
V
o
= 49.5 dBmV at 860 MHz; note 2
X
mod
cross modulation
49 channels flat; V
o
= 47 dBmV;
f
m
= 55.25 MHz
77 channels flat; V
o
= 44 dBmV;
f
m
= 55.25 MHz
110 channels flat; V
o
= 44 dBmV;
f
m
= 55.25 MHz
129 channels flat; V
o
= 44 dBmV;
f
m
= 55.25 MHz
110 channels; f
m
= 55.25 MHz;
V
o
= 49 dBmV at 550 MHz; note 1
−
−
−
−
−
129 channels; f
m
= 859.25 MHz;
−
V
o
= 49.5 dBmV at 860 MHz; note 2
2001 Oct 30
3
Philips Semiconductors
Product specification
860 MHz, 18.5 dB gain power doubler amplifier
BGD902L
SYMBOL
CSO
PARAMETER
composite second order
distortion
CONDITIONS
49 channels flat; V
o
= 47 dBmV;
f
m
= 860.5 MHz
77 channels flat; V
o
= 44 dBmV;
f
m
= 548.5 MHz
110 channels flat; V
o
= 44 dBmV;
f
m
= 746.5 MHz
129 channels flat; V
o
= 44 dBmV;
f
m
= 860.5 MHz
110 channels; f
m
= 246 MHz;
V
o
= 49 dBmV at 550 MHz; note 1
MIN.
−
−
−
−
−
TYP.
−66
−71
−65
−62
−69
−64
−80
−83
−84
64.5
65.5
67.5
48
51.5
4
4.3
5
6
365
MAX.
−63
−66
−60
−59
−64
−59
−74
−77
−78
−
−
−
−
−
5
5.5
6.5
7.5
380
UNIT
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBmV
dBmV
dBmV
dBmV
dBmV
dB
dB
dB
dB
mA
129 channels; f
m
= 246 MHz;
−
V
o
= 49.5 dBmV at 860 MHz; note 2
d
2
second order distortion
note 3
note 4
note 5
V
o
output voltage
d
im
=
−60
dB; note 6
d
im
=
−60
dB; note 7
d
im
=
−60
dB; note 8
CTB compression = 1 dB;
129 channels flat; f = 859.25 MHz
CSO compression = 1 dB;
129 channels flat; f = 860.5 MHz
NF
noise figure
f = 50 MHz
f = 550 MHz
f = 750 MHz
f = 900 MHz
I
tot
Notes
1. Tilt = 9 dB (50 to 550 MHz); tilt = 3.5 dB at
−6
dB offset (550 to 750 MHz).
2. Tilt = 12.5 dB (50 to 860 MHz).
total current consumption (DC)
note 9
−
−
−
63
64
66
47
49.5
−
−
−
−
350
3. f
p
= 55.25 MHz; V
p
= 44 dBmV; f
q
= 805.25 MHz; V
q
= 44 dBmV; measured at f
p
+ f
q
= 860.5 MHz.
4. f
p
= 55.25 MHz; V
p
= 44 dBmV; f
q
= 691.25 MHz; V
q
= 44 dBmV; measured at f
p
+ f
q
= 746.5 MHz.
5. f
p
= 55.25 MHz; V
p
= 44 dBmV; f
q
= 493.25 MHz; V
q
= 44 dBmV; measured at f
p
+ f
q
= 548.5 MHz.
6. Measured according to DIN45004B:
f
p
= 851.25 MHz; V
p
= V
o
; f
q
= 858.25 MHz; V
q
= V
o
−6
dB; f
r
= 860.25 MHz; V
r
= V
o
−6
dB;
measured at f
p
+ f
q
−
f
r
= 849.25 MHz.
7. Measured according to DIN45004B:
f
p
= 740.25 MHz; V
p
= V
o
; f
q
= 747.25 MHz; V
q
= V
o
−6
dB; f
r
= 749.25 MHz; V
r
= V
o
−6
dB;
measured at f
p
+ f
q
−
f
r
= 738.25 MHz.
8. Measured according to DIN45004B:
f
p
= 540.25 MHz; V
p
= V
o
; f
q
= 547.25 MHz; V
q
= V
o
−6
dB; f
r
= 549.25 MHz; V
r
= V
o
−6
dB;
measured at f
p
+ f
q
−
f
r
= 538.25 MHz.
9. The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 35 V.
2001 Oct 30
4
Philips Semiconductors
Product specification
860 MHz, 18.5 dB gain power doubler amplifier
BGD902L
handbook, halfpage
−50
MGS444
52
Vo
handbook, halfpage
−50
MGS445
52
Vo
CTB
(dB)
−60
(1)
(2)
(3)
(4)
Xmod
(dB)
−60
(1)
(2)
(3)
(4)
(2)
(3)
(4)
(dBmV)
48
(dBmV)
48
−70
(1)
44
−70
(1)
44
−80
40
−80
40
−90
0
200
400
600
f (MHz)
36
800
−90
0
200
400
600
f (MHz)
36
800
Z
S
= Z
L
= 75
Ω;
V
B
= 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz);
tilt = 3.5 dB at
−6
dB offset (550 to 750 MHz).
(1) V
o
.
(2) Typ. +3
σ.
(3) Typ.
(4) Typ.
−3 σ.
Z
S
= Z
L
= 75
Ω;
V
B
= 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz);
tilt = 3.5 dB at
−6
dB offset (550 to 750 MHz).
(1) V
o
.
(2) Typ. +3
σ.
(3) Typ.
(4) Typ.
−3 σ.
Fig.2
Composite triple beat as a function of
frequency under tilted conditions.
Fig.3
Cross modulation as a function of frequency
under tilted conditions.
handbook, halfpage
−50
MGS446
52
Vo
(dBmV)
48
CSO
(dB)
−60
(1)
(2)
(1)
(3)
(2)
−70
(3)
(4)
44
(4)
−80
40
−90
0
200
400
600
f (MHz)
36
800
Z
S
= Z
L
= 75
Ω;
V
B
= 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz);
tilt = 3.5 dB at
−6
dB offset (550 to 750 MHz).
(1) V
o
.
(2) Typ. +3
σ.
(3) Typ.
(4) Typ.
−3 σ.
Fig.4
Composite second order distortion as a
function of frequency under tilted
conditions.
2001 Oct 30
5
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