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AP513

Description
RF amplifier 1805-1880mhz 30db gain
Categorysemiconductor    Other integrated circuit (IC)   
File Size312KB,5 Pages
ManufacturerTriQuint Semiconductor Inc. (Qorvo)
Websitehttp://www.triquint.com
Environmental Compliance
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AP513 Overview

RF amplifier 1805-1880mhz 30db gain

AP513 Parametric

Parameter NameAttribute value
MakerTriQuint Semiconductor Inc. (Qorvo)
Product CategoryRF amplifier
RoHSyes
Number of channels1
working frequency1805 MHz to 1880 MHz
P1dB39 dBm at 1840 MHz
Working power voltage12 V
Supply current1.7 A
Maximum operating temperature+ 85 C
Minimum operating temperature- 40 C
EncapsulationReel
Installation styleThrough Hole
typePower Amplifie
AP513
Product Features
1805 – 1880 MHz
30 dB Gain
-64 dBc ACPR
@ 28 dBm CDMA2k 7fa Power
DCS-band 8W HBT Amplifier Module
Product Information
Product Description
The AP513 is a high dynamic range power amplifier in a
RoHS-compliant flange-mount package. The multi-stage
amplifier module has 30 dB gain, while being able to achieve
high performance for DCS-band applications with +39 dBm
of compressed 1dB power. The module has been internally
optimized for linearity to provide -64 dBc ACPR at 28 dBm
power for 7-carrier CDMA2000 applications.
The AP513 uses a high reliability InGaP/GaAs HBT process
technology and does not require any external matching
components. The module operates off of a +12V supply and
does not requiring any negative biasing voltages; an internal
active bias allows the amplifier to maintain high linearity
over temperature. It has the added feature of a +5V power
down control pin. A low-cost metal housing allows the
device to have a low thermal resistance and achieves over
100 years MTTF. All devices are 100% RF and DC tested.
Functional Diagram
+39 dBm P1dB
+12 V Single Supply
Power Down Mode
Bias Current Adjustable
RoHS-complaint flange-mount pkg
1
2
3
4
5
6
Top View
Pin No.
1
2/4
3/5
6
Case
Function
RF Output
Vcc
Vpd
RF Input
Ground
Applications
Final stage amplifiers for Repeaters
Optimized for driver amplifier PA
The AP513 is targeted for use as a driver or final stage
mobile infrastructure
amplifier in wireless infrastructure where high linearity and
high power is required. This combination makes the device an
excellent candidate for next generation multi-carrier 3G base
stations or repeaters using the DCS1800 frequency band.
Specifications
(1)
Parameter
Operational Bandwidth
Test Frequency
Adjacent Channel Power Ratio
Power Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Operating Current
(2)
Quiescent Current, Icq
(2)
Device Voltage, Vcc
Device Voltage, Vpd
Ruggedness
Units
MHz
MHz
dBc
dB
dB
dB
dBm
dBm
A
A
V
V
VSWR
Min
Typ
Max
Test Conditions
CDMA2000 7fa +28 dBm Total Power, ±885 kHz offset
Pout = +28 dBm
1805 – 1880
1840
-63.6
-60
27.8
30.3
32.8
14
7.8
+39
+50
1.67
1.55
1.70
1.80
+12
+5
10:1
Pout = +28 dBm/tone,
Δf
= 1 MHz
Pout = +28 dBm
Pull-down voltage: 0V = “OFF”, 5V=”ON”
Pout = +39 dBm CW, all phases
1. Test conditions unless otherwise noted: 25 ºC.
2. The current can be adjusted through an external resistor from the 5V supply to the pull-down voltage pin (pin 3).
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
CDMA2000 signal (fwd link, PAR 10.5 dB @ .01% prob)
-40 to +85
°C
-55 to +150
°C
+10 dBm
Rating
Ordering Information
Part No.
AP513
AP513-PCB
Description
DCS-band 8W HBT Amplifier Module
Fully-Assembled Evaluation Board
Specifications and information are subject to change without notice
Operation of this device above any of these parameters may cause permanent damage.
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com, www.TriQuint.com
Page 1 of 5 June 2006

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