AP504
Product Features
•
1705 – 1790 MHz
•
31.5 dB Gain
•
+25 dBm CDMA2k 7fa Power
(-63 dBc ACPR)
DCS-band 4W HBT Amplifier Module
Product Description
The AP504 is a high dynamic range power amplifier in a
RoHS-compliant flange-mount package. The multi-stage
amplifier module has 31.5 dB gain. The module has been
internally optimized for linearity to provide +25 dBm (-63
dBc ACPR) linear power for 7-carrier CDMA2000
applications.
The AP504 uses a high reliability InGaP/GaAs HBT
process technology and does not require any external
matching components. The module operates off of a +12V
supply and does not requiring any negative biasing voltages;
an internal active bias allows the amplifier to maintain high
linearity over temperature. It has the added feature of a
+5V power down control pin. While the module has been
tuned for optimal performance for Class AB applications,
the quiescent current can also be adjusted for Class B
applications through an external resistor. A low-cost metal
housing allows the device to have a low thermal resistance
and achieves over 100 years MTTF. All devices are 100%
RF and DC tested.
The AP504 is targeted for use as a driver or final stage
amplifier in wireless infrastructure where high linearity and
high power is required. This combination makes the device
an excellent candidate for next generation multi-carrier 3G
base stations using the DCS1800 frequency band.
Functional Diagram
•
+12 V Single Supply
•
Power Down Mode
•
Bias Current Adjustable
•
RoHS-compliant flange-mount pkg
1
2
3
4
5
6
Top View
Pin No.
1
2/4
3/5
6
Case
Function
RF Output
Vcc
Vpd
RF Input
Ground
Applications
•
Final stage amplifiers for Repeaters
•
Optimized for driver amplifier PA
mobile infrastructure
Specifications
(1)
25 ºC, V
cc
=12V, V
pd
=5V, I
cq
=835mA, R7=0Ω, 50Ω unmatched fixture
Parameter
Operational Bandwidth
Test Frequency
Adjacent Channel Power Ratio
Power Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Operating Current
(2)
Quiescent Current, Icq
(2)
Device Voltage, Vcc
Device Voltage, Vpd
Load Stability
Units
MHz
MHz
dBc
dB
dB
dB
dBm
dBm
mA
mA
V
V
VSWR
Min
Typ
Max
-61
35.5
Test Conditions
CDMA2000 7fa 25 dBm Total Power, 885 kHz offset
Pout = +25 dBm
1705 – 1790
1765
-63.2
30.5
31.5
11
5
+36
+52
790
850
780
835
+12
+5
10:1
940
920
Pout = +23 dBm/tone,
Δf
= 1 MHz
Pout = +25 dBm
Pull-down voltage: 0V = “OFF”, 5V=”ON”
1. Test conditions unless otherwise noted: 25ºC.
2. The current can be adjusted through an external resistor from the 5V supply to the pull-down voltage pin (pin 3).
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
with output terminated in 50
Ω
-40 to +85
°C
-55 to +150
°C
+15 dBm
Rating
Ordering Information
Part No.
AP504
AP504-PCB
Description
DCS-band 4W HBT Amplifier Module
Fully-Assembled Evaluation Board
(Class AB configuration, Icq=835mA)
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com, www.TriQuint.com
Page 1 of 5 July 2008
AP504
DCS-band 4W HBT Amplifier Module
Performance Graphs – Class AB Configuration (AP504-PCB)
The AP504-PCB and AP504 module is configured for Class AB by default. The resistor – R7 – which sets the current draw for
the amplifier is set at 0
Ω
in this configuration. Increasing that value will decrease the quiescent and operating current of the
amplifier module, as described on the next page.
+12V
GND
+12V
10μF
DNP
+5V
DNP
0Ω
0Ω
DNP
100pF
.01μF
DNP
RF IN
0Ω
DNP
DNP
6
.01μF
DNP
100pF
RF OUT
0Ω
Notes:
1. Please note that for reliable operation, the evaluation board will have
to be mounted to a much larger heat sink during operation and in
laboratory environments to dissipate the power consumed by the
device. The use of a convection fan is also recommended in
laboratory environments. Details of the mounting holes used in the
WJ heatsink are given on the last page of this datasheet.
2. The area around the module underneath the PCB should not contain
any soldermask in order to maintain good RF grounding.
3. For proper and safe operation in the laboratory, the power-on
sequencing should be followed:
1. Connect RF In and Out
2. Connect the voltages and ground pins as shown in the circuit.
3. Apply the RF signal
4. Power down with the reverse sequence
5
4
3
2
1
DNP
DNP
Gain
+25 °C, 12Vcc, Icq=850mA
Return Loss
+25 °C, Vcc=12V, Icq=850mA
Gain vs. Temp
33
Magnitude (dB)
0
-5
Gain (dB)
36
34
32
30
28
1765 MHz, Vcc=12V, Icq=850mA
32
Gain (dB)
31
30
29
28
1700
-10
-15
-20
-25
1700
S11
1720
1740
1760
1780
S22
26
1800
1720
1740
1760
1780
1800
-40
-20
0
20
40
60
80
Frequency (MHz)
ACPR vs. Output Power vs. Temp
CDMA2000 SR1, 7FA , fc=1765 MHz,
Δf=±885
kHz, Vcc=12V, Icq=850mA
Frequency (MHz)
Temperature (°C)
ACPR vs. Frequency vs. Temp
CDMA2000 SR1, 7FA ,
Δf=±885
kHz, 25 dBm Pout, Vcc=12V, Icq=850mA
ACPR vs. Output Power vs. Temp
-50
-55
-60
-65
-70
ACPR (dBc)
ACPR (dBc)
-60
-65
-70
ACPR (dBc)
-40 °C
+25 °C
+85 °C
-50
-55
CDMA2000 SR1, 7FA , fc=1765 MHz,
Δf=±1.98
MHz, Vcc=12V, Icq=850mA
-40 °C
+25 °C
+85 °C
-50
-55
-60
-65
-40 °C
+25 °C
+85 °C
18
20
22
24
26
28
18
20
22
24
26
28
-70
1750
1760
1770
1780
Total Output Power (dBm)
Total Output Power (dBm)
Frequency (MHz)
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com, www.TriQuint.com
Page 2 of 5 July 2008
AP504
-60
DCS-band 4W HBT Amplifier Module
Performance Graphs (cont’d)
ACPR vs. Output Power
CDMA2000 SR1, 1FA , fc=1765 MHz, +25
°C,
Vcc=12V, Icq=850mA
Icc vs. Output Power
Icc / PAE vs. Output Power
1
Icc (mA) / PAE
1765 MHz, +25 °C, Vcc=12V, Icq=850mA
1.98 MHz offset
885 kHz offset
Icc (mA)
860
840
820
800
780
1765 MHz, Vcc=12V, Icq=850mA
0.8
PAE
0.6
0.4
0.2
0
Icc
ACPR (dBc)
-70
-80
-40 °C
+25 °C
+85 °C
-90
18
20
22
24
26
Total Output Power (dBm)
Output Power / Gain vs. Input Power
38
Gain (dB) / Pout (dBm)
1765 MHz, +25 °C, Vcc=12V, Icq=850mA
760
18
20
22
24
26
28
Output Channel Power (dBm)
IMD vs. Output Power per tone
1765 MHz, +25 °C, Vcc=12V, Icq=850mA
20
22
24
26
28
30
32
34
Output Power (dBm)
OIP3 vs. Output Power per tone
1765 MHz, +25 °C, Vcc=12V, Icq=850mA
-30
-40
IMD (dB)
55
50
OIP3 (dBm)
36
34
32
30
28
-4
Pout
Gain
IMD3_Upper
IMD3_Lower
IMD5
-50
-60
-70
-80
45
40
35
30
-2
0
2
4
6
18
20
22
24
26
28
18
20
22
24
26
28
Input Power (dBm)
Output Power per tone (dBm)
Output Power per tone (dBm)
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com, www.TriQuint.com
Page 3 of 5 July 2008
AP504
DCS-band 4W HBT Amplifier Module
MTTF Calculation
The MTTF of the AP504 can be calculated by first
determining how much power is being dissipated by the
amplifier module. Because the device’s intended application
is to be a power amplifier pre-driver or final stage output
amplifier, the output RF power of the amplifier will help
lower the overall power dissipation. In addition, the
amplifier can be biased with different quiescent currents, so
the calculation of the MTTF is custom to each application.
The power dissipation of the device can be calculated with
the following equation:
P
diss
= V
cc
* I
cc
– (Output RF Power – Input RF Power),
V
cc
= Operating supply voltage =
12V
I
cc
= Operating current
{The RF power is converted to Watts}
While the maximum recommended case temperature on the
datasheet is listed at 85
˚C,
it is suggested that customers
maintain an MTTF above 1 million hours. This would
convert to a derating curve for maximum case temperature vs.
power dissipation as shown in the plot below.
Maximum Recommended Case Temperature vs. Power Dissipation
to maintain 1 million hours MTTF
90
Maximum Case Temperature (°C)
To calculate the MTTF for the module, the junction
temperature needs to be determined. This can be easily
calculated with the module’s power dissipation, the thermal
resistance value, and the case temperature of operation:
T
j
= P
diss
* R
th
+ T
case
T
j
= Junction temperature
P
diss
= Power dissipation (calculated from above)
R
th
= Thermal resistance =
9 ˚C/W
T
case
= Case temperature of module’s heat sink
From a numerical standpoint, the MTTF can be calculated
using the Arrhenius equation:
MTTF = A* e
(Ea/k/Tj)
A = Pre-exponential Factor =
6.087 x 10
-11
hours
Ea = Activation Energy =
1.39 eV
k = Boltzmann’s Constant =
8.617 x 10
-5
eV/ ºK
T
j
= Junction Temperature (ºK) = T
j
(ºC) + 273
A graphical view of the MTTF can be shown in the plot
below.
MTTF vs. Junction Temperature
1.E+07
MTTF (hours)
80
1.E+06
70
60
50
4
5
6
7
8
9
10
11
12
Power Dissipation (Watts)
1.E+05
130
140
150
160
170
180
Junction Temperature (°C)
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com, www.TriQuint.com
Page 4 of 5 July 2008
AP504
DCS-band 4W HBT Amplifier Module
Outline Drawing
AP504
1
2
3
4
5
6
Outline Drawing for the Heatsink with the
WJ Evaluation Board
Product Marking
The device will be marked with an “AP504” designator
with an alphanumeric lot code on the top surface of the
package noted as “ABCD” on the drawing.
A
manufacturing date will also be printed as “XXYY”, where
the “XX” represents the week number from 1 – 52.
The product will be shipped in tubes in multiples of 15.
ESD / MSL Information
ESD Rating:
Value:
Test:
Standard:
ESD Rating:
Value:
Test:
Standard:
Class 1C
Passes at
≥
1,000 to < 2,000 volts
Human Body Model (HBM)
JEDEC Standard JESD22-A114
Class III
Passes
≥
500 to < 1,000 volts
Charged Device Model (CDM)
JEDEC Standard JESD22-C101
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com, www.TriQuint.com
Page 5 of 5 July 2008
RF/Wirelessly
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