The CV111-3A is a high linearity downconverter designed
to meet the demanding issues for performance,
functionality, and cost goals of current and next generation
mobile infrastructure basestations. It provides high
dynamic range performance in a low profile surface-mount
leadless package that measures 6 x 6 mm square.
Functionality includes RF amplification, frequency
conversion and IF amplification, while an integrated LO
driver amplifier powers the passive mixer. The MCM is
implemented with reliable and mature GaAs MESFET
and InGaP HBT technology.
Typical applications include frequency down conversion,
modulation and demodulation for receivers used in
CDMA, CDMA2000, W-CDMA / IMT2000, GPRS, and
EDGE 2.5G mobile infrastructure technologies for
UMTS frequency bands.
Functional Diagram
MIXIF
RF IN
GND
GND
28
RF OUT 1
GND 2
GND 3
GND 4
GND 5
GND 6
MIXRF 7
8
GND
9
GND
10
GND
11
MIXLO
27
IF IN
23
GND
26
25
24
22
21 IF OUT
GND
19 GND
18 GND
17 BIAS
16 GND
15 LO IN
12
GND
13
LO OUT
14
GND
IF
RF Amp
IF Amp
20 GND
LO Driver Amp
RF
LO
Top View
Specifications
(1)
Parameters
RF Frequency Range
LO Frequency Range
IF Center Frequency Range
% Bandwidth around IF center frequency
IF Test Frequency
SSB Conversion Gain
Gain Drift over Temp (-40 to 85 °C)
Output IP3
Output IP2
Output 1dB Compression Point
Noise Figure
LO Input Drive Level
LO-RF Isolation
LO-IF Isolation
Return Loss: RF Port
Return Loss: LO Port
Return Loss: IF Port
Operating Supply Voltage
Supply Current
FIT Rating
Thermal Resistance
Junction Temperature
Units
MHz
MHz
MHz
%
MHz
dB
dB
dBm
dBm
dBm
dB
dBm
dB
dB
dB
dB
dB
V
mA
failures
/
1E9 hrs
°C
/ W
°C
Min
Typ
1900 – 2200
1600 – 2135
65 – 300
±7.5
240
20
±0.5
+38
+48
+21
5.3
0
40
25
14
14
14
+5
360
Max
Comments
See note 2
See note 3
Temp = 25 °C
Referenced to +25 °C
See note 4
See note 4
See note 5
-2.5
+2.5
See note 6
P
LO
= 0 dBm
+4.9
290
+5.1
480
72.1
27
160
@ 70
o
C ambient, 90% confidence
See note 7
1. Specifications when using the application specific circuit (shown on page 3) with a low side LO = 0 dBm in a downconverting application over the operating case temperature range.
2. IF matching components affect the center IF frequency. Proper component values for other IF center frequencies than shown can be provided by emailing to applications.engineering@wj.com.
3. The IF bandwidth of the converter is defined as 15% around any center frequency in its operating IF frequency range. The bandwidth is determined with external components. Specifications are valid around
the total ±7.5% bandwidth. ie. with a center frequency of 80 MHz, the specifications are valid from 80 ± 6 MHz.
4. Assumes the supply voltage = +5 V. OIP3 is measured with
∆f
= 1 MHz with IF
out
= 5 dBm / tone.
5. Assumes LO injection noise is filtered at the thermal noise floor, -174 dBm/Hz, at the RF, IF, and Image frequencies.
6. L-R Isolation is referenced to an LO injection of 0 dBm. The L-R performance shown also includes the isolation due to an external SAW filter between the RF amplifier and mixer.
7. The maximum junction temperature ensures a minimum MTTF rating of 1 million hours of usage.
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
DC Voltage
Junction Temperature
RF Input (continuous)
Rating
-40 to +85° C
-55 to +125° C
+6 V
+220 °C
+2 dBm
Ordering Information
Part No.
Description
UMTS-band High Linearity Downconverter
CV111-3AF
(lead-free/RoHS-compliant 6x6mm QFN package)
CV111-3APCB75 Fully Assembled Eval. Board, IF = 75MHz
CV111-3APCB240 Fully Assembled Eval. Board, IF = 240MHz
Specifications and information are subject to change without notice
Operation of this device above any of these parameters may cause permanent damage.
TriQuint Semiconductor, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6633
•
e-mail: Info-sales@tqs.com
•
Web site: www.TriQuint.com
Page 1 of 7 January 2009
CV111-3A
UMTS-band High Linearity Downconverter
Device Architecture / Application Circuit Information
MIXIF
RF IN
GND
GND
28
RF OUT 1
GND 2
N/C 3
GND 4
N/C 5
GND 6
MIXRF 7
8
GND
9
N/C
10
GND
11
MIXLO
27
IF IN
23
GND
26
25
24
22
21 IF OUT
GND
IF
RF Amp
Typical Downconverter Performance Chain Analysis
Stage
RF Amplifier
RF Filter
LO Amp / MMIC Mixer
IF Amplifier
CV111-3A
Gain
(dB)
Output
P1dB
(dBm)
Output
IP3
(dBm)
NF
(dB)
Current
(mA)
140
---
80
140
360
Cumulative Performance
Output Output
Gain
NF
P1dB
IP3
(dB)
(dB)
(dBm)
(dBm)
12
21.0
41.0
3.5
10
19.0
39.0
3.6
1.5
6.1
22.2
4.8
20
20.7
37.9
5.4
20
20.7
37.9
5.4
IF Amp
20 GND
19 N/C
18 GND
LO Driver Amp
17 BIAS
16 GND
RF
LO
12
GND
13
LO OUT
14
GND
15 LO IN
12
21
41
3.5
-2
---
---
2.0
-8.5
8
23
9.1
18.5
23
41
2.1
Cumulative Performance
RF Amp Matching
RF Amp Bias
IF Amp Matching
IF Amp Bias
RF Bandpass Filter /
Attenuator Pad
Printed Circuit Board Material:
.014” FR-4, 4 layers, .062” total thickness
LO Amp Bias
LO Amp Bias
RF / IF Diplexer
(used for cellular versions only)
CV111-3A:
The application circuit can be broken up into four main
functions as denoted in the colored dotted areas above: RF/IF
diplexing (purple; this is only used with the cellular-band CV
products), amplifier matching (green), filtering (red), and dc biasing
(blue). There are various placeholders for chip components in the
circuit schematic so that a common PCB can be used for all WJ
single-branch converters. Additional placeholders for other optional
functions such as filtering are also included.
RF / IF Amplifier Matching:
The RF amplifier requires a shunt
matching element for optimal gain and input return loss performance.
The IF amplifier requires matching elements to optimize the
performance of the amplifier to the desired IF center frequency. Since
IF bandwidths are typically on the order of 5 to 10%, a simple two
element matching network, in the form of either a high-pass or low-
pass filter structure, is sufficient to match the MMIC IF amplifier over
these narrow bandwidths. Proper component values for other IF center
frequencies can be found in the IF Amplifier Matching Table or by e-
mailing to sjcapplication.engineering@tqs.com.
RF Bandpass Filtering:
Bandpass filtering is recommended to
achieve the best noise figure performance with the downconverter.
The bandpass filter, implemented with a SAW filter on the
application circuit, allows for the suppression of noise from the
image frequency. It is permissible to not use a filter and use a 2 dB
pad with R6, R7, and R16 instead with slightly degraded noise
figure performance.
External Diplexer:
This is only used with the cellular-band CV
products. The mixer performs the diplexing internally for the
CV111-3A; therefore the components shown in the diplexer section
should be loaded as follows: C2 = C14 = 0
Ω.
DC biasing:
DC bias must be provided for the RF, LO and IF
amplifiers in the converter. R1 sets the operating current for the last
stage of the LO amplifier and is chosen to optimize the mixer LO
drive level. Proper RF chokes and bypass capacitors are chosen for
proper amplifier biasing at the intended frequency of operation. The
“+5 V” dc bias should be supplied directly from a voltage regulator.
IF Amplifier Matching
Frequency (MHz)
L7 (nH)
C17 (pF)
R8 (ohms)
L4 (nH)
40
470
24
4.7
470
50
430
15
4.7
240
75
150
22
3.3
330
100
150
10
2.2
330
125
120
8.2
2.2
330
130
120
6.8
2.2
330
155
100
5.6
2.2
330
169
82
5.0
2.2
330
180
82
4.7
2.2
330
210
82
3.3
2.2
220
240
56
3.9
2.2
220
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6633
•
e-mail: Info-sales@tqs.com
•
Web site: www.TriQuint.com
Page 2 of 7 January 2009
CV111-3A
UMTS-band High Linearity Downconverter
Downconverting Application Circuit: CV111-3APCB75
RF = 1900 – 2200 MHz, IF = 75 MHz
PCB Layout
Bill of Materials
Ref. Desig.
R1
R2, R3, R4, R5,
C2, C14
R6, R7, R9, R10
R8
R11, R16
C1, C3, C4, C5, C6
C7, C9, C16
C8, C10
C11, C12, C13, C15,
C21, F1, L5, L6, L8,
L10
C17
C18
L2
L3
L4
L7
U1
Component
13
Ω
chip resistor, size 0805
0
Ω
chip resistor
470
Ω
chip resistor
3.3
Ω
chip resistor
10
Ω
chip resistor
100 pF chip capacitor
0.018
µF
chip capacitor
1000 pF chip capacitor
Shown in silkscreen, but not
used in actual circuit.
22 pF chip capacitor
1.5 pF chip capacitor
18 nH chip inductor
120 nH chip inductor
220 nH chip inductor, size 0805
22 nH chip inductor
CV111-3A WJ Converter
Circuit Board Material: .014” FR-4, 4 layers, .062” total thickness
All components are of size 0603 unless otherwise specified.
Specifications and information are subject to change without notice
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