variable gain amplifier (VGA) housed in a low profile
Pb-free / green / RoHS-compliant surface-mount leadless
QFN package that measures 6 x 6 mm square.
The +30 dBm output compression point and +46 dBm
output intercept point of the amplifier are maintained over
the entire attenuation range, making the VG112 ideal for
use in transmitter and receiver AGC circuits. The high gain
of the dual-stage amplifier allows for more integration in a
transceiver board while requiring minimal printed circuit
board space.
Superior thermal design allows the product to have a
minimum MTTF rating of 100 years at a mounting
temperature of +85 ºC. All devices are 100% RF & DC
tested and packaged on tape and reel for automated surface-
mount assembly.
Functional Diagram
Gain Ctrl
GND
7
GND 8
GND 9
GND 10
RF IN 11
GND 12
GND 13
GND 14
15
GND
16
GND
17
GND
18
GND
19
Vbias2
20
GND
21
GND
6
GND
2
5
4
3
Vbias1
1
28 GND
27 Vcc1
26 GND
25 RF OUT /
Vcc2
24 GND
23
RF OUT /
Vcc2
22 GND
GND
GND
GND
Amp
Variable
Attenuator
Applications
•
Xmit & Rcv AGC circuitry for
mobile infrastructure
Specifications
(1)
Parameter
Operational Bandwidth
Test Frequency
Gain at min. attenuation
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Noise Figure at min. attenuation
Gain Variation Range
Gain Variation Control Voltage, V
CTRL
Supply Voltage, V
CC
Operating Amplifier Current Range
Gain Control Pin Current
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dB
dB
V
V
mA
mA
Min
1800
20.5
Typ
2140
23
18
8.2
+30
+46
8
28
Max
2200
Conditions
See note 1
+43
23.5
0
350
4.5
+5
415
475
20
See note 2
V
CTRL
= 0 V
See note 3
See note 1
Pin 25
V
CTRL
= 4.5 V. See note 1.
1. Test conditions unless otherwise noted: 25 ºC, Vcc = +5 V in a tuned application circuit. Vctrl is the control voltage through a 220
Ω
dropping resistor as shown in the same application circuit.
2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. The gain variation range is measured as the difference in gain with Vctrl = 0V and Vctrl = 4.5V at 2.14 GHz.
Absolute Maximum Rating
Parameter
Storage Temperature
Thermal Resistance, Rth
Pin 5 (Gain Control) Current
Max. Junction Temperature
-55 to +125
°C
33
°C
/ W
30 mA
+200
°C
Rating
Ordering Information
Part No.
VG112-G
VG112-PCB2140
Description
PCS/UMTS-band Variable Gain Amplifier
(lead-free/green/RoHS-compliant QFN package)
2140 MHz Fully Assembled Application Board
Specifications and information are subject to change without notice
Operation of this device above any of these parameters may cause permanent damage.
Standard tape / reel size = 500 pieces on a 7″ reel
TriQuint Semiconductor, Inc
•
Phone +1-503-615-9000
•
FAX: +1-503-615-8900
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com
Page 1 of 5
Jan 2010
VG112
PCS/UMTS-band Variable Gain Amplifier
2140 MHz Application Circuit Performance
Performance using the circuitry on the VG112-PCB Evaluation Board
Circuit Board Material: .014” FR-4, 4 layers, .062” total thickness
•
The center of C5 should be placed 5mm (.197”) away from the edge of the VG112.
•
The input trace is a high impedance line and is needed to get a good input match into the VGA.
•
The board is optimized for performance at 2140 MHz. Performance at 1960 MHz can be
optimized by replacing C5 with 2.7 pF at location A on the WJ VG112 evaluation board.
Bill of Materials
Ref. Des. Description
C1, C7, C10 47 pF Chip Capacitor
C2, C3, C4,
1000 pF Chip Capacitor
C8, C9
C5
2.4 pF Chip Capacitor
C6
3.3
μF
Chip Capacitor
L1, L2
18 nH Chip Inductor
R1
220
Ω
Chip Resistor
R3
75
Ω
Chip Resistor
R2, R4
0
Ω
Chip Resistor
U1
VG112-G VGA
Size
0603
0603
0603
0805
0603
0603
0603
0603
QFN 6x6
S21 vs. Frequency
Vctrl=0V (Maximum Gain Setting)
S11 vs. Frequency
Vctrl=0V (Maximum Gain Setting)
S22 vs. Frequency
Vctrl=0V (Maximum Gain Setting)
28
26
S21 (dB)
S11 (dB)
0
0
-40 °C
+25 °C
+85 °C
-5
-5
S22 (dB)
-10
-15
-20
-40 °C
+25 °C
+85 °C
24
22
20
-40 °C
+25 °C
+85 °C
-10
-15
-20
-25
1800
18
1800
1900
2000
Frequency (MHz)
2100
2200
1900
2000
Frequency (MHz)
2100
2200
-25
1800
1900
2000
Frequency (MHz)
2100
2200
S21 vs. Frequency vs. Control Voltage
S11 vs. Frequency vs. Control Voltage
S22 vs. Frequency vs. Control Voltage
30
20
S21 (dB)
S11 (dB)
10
0
-10
1800
Vctrl=0.00V
Vctrl=1.52V
Vctrl=0.73V
Vctrl=2.20V
Vctrl=1.06V
Vctrl=4.50V
0
-5
-10
-15
-20
-25
1800
Vctrl=0.00V
Vctrl=1.52V
Vctrl=0.73V
Vctrl=2.20V
Vctrl=1.06V
Vctrl=4.50V
0
-5
S22 (dB)
-10
-15
-20
-25
1800
Vctrl=0.00V
Vctrl=1.52V
Vctrl=0.73V
Vctrl=2.20V
Vctrl=1.06V
Vctrl=4.50V
1900
2000
Frequency (MHz)
2100
2200
1900
2000
Frequency (MHz)
2100
2200
1900
2000
Frequency (MHz)
2100
2200
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
•
Phone +1-503-615-9000
•
FAX: +1-503-615-8900
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com
Page 2 of 5
Jan 2010
VG112
48
46
OIP3 (dBm)
PCS/UMTS-band Variable Gain Amplifier
2140 MHz Application Circuit Performance
OIP3 vs. Output Power vs. Temperature
frequency = 2140, 2141 MHz, 0dB Atten.
OIP3 vs. Output Power vs. Temperature
48
46
OIP3 (dBm)
44
42
40
OIP3 (dBm)
frequency = 2140, 2141 MHz, 5dB Atten.
OIP3 vs. Output Power vs. Temperature
48
46
44
42
40
frequency = 2140, 2141 MHz, 10dB Atten.
44
42
40
+25 °C
38
10
12
14
16
18
Output Power per tone (dBm)
OIP3 vs. Output Power vs. Temperature
48
46
frequency = 2140, 2141 MHz, 15dB Atten.
-40 °C
+85 °C
38
20
10
+25 °C
-40 °C
+85 °C
38
20
10
+25 °C
-40 °C
+85 °C
20
12
14
16
18
Output Power per tone (dBm)
OIP3 vs. Pout vs. Attenuation Setting
frequency = 2140, 2141 MHz, +25 °C
12
14
16
18
Output Power per tone (dBm)
IMD products vs. Output Power
fundamental frequency = 2140, 2141 MHz; +25 °C, 0dB Atten
48
OIP3 (dBm)
46
44
42
40
-40
IMD products (dBc)
-50
-60
-70
-80
IMD_Low
IMD_High
OIP3 (dBm)
44
42
40
+25 °C
38
10
12
14
16
18
Output Power per tone (dBm)
20
-40 °C
+85 °C
0 dB Atten
5 dB Atten
10 dB Atten
15 dB Atten
10
12
14
16
18
Output Power per tone (dBm)
20
38
10
12
14
16
18
Output Power per tone (dBm)
20
P1dB vs. Temperature
32
30
P1dB (dBm)
28
26
24
ACLR (dBc)
frequency = 2140 MHz, 0dB Atten.
ACLR vs. Channel Power
3GPP W-CDMA, Test Model 1+64 DPCH, ±5 MHz offset, 2140 MHz
-40
-45
-50
-55
-40 C
22
-40
Normalized Gain vs. Vctrl
2140 MHz, Vctrl is as shown in the application circuit
+25 C
21
+85 C
22
-60
-15
10
35
Temperature (°C)
60
85
18
19
20
Output Channel Power (dBm)
Normalized Gain vs. Ictrl
2140 MHz
Ictrl vs. Vctrl
Vctrl is as shown in the application circuit
0
-5
-10
-15
-20
-25
-30
0
1
2
Vctrl (V)
3
4
5
Normalized Gain (dB)
Normalized Gain (dB)
0
12
-40 °C
+25 °C
+85 °C
-5
-10
-15
-20
-25
-30
0
2
4
-40 °C
+25 °C
+85 °C
Ictrl (mA)
10
8
6
4
2
0
-40 °C
0
1
2
Vctrl (V)
3
+25 °C
4
+85 °C
5
6
8
10
12
Attenuation Control Current (mA)
Noise Figure vs. Frequency vs. Temperature
Vctrl=0V (Maximum Gain Setting)
Phase vs. Normalized Gain
2140 MHz
10
9
-40 °C
+25 °C
+85 °C
Phase (deg)
20
15
10
5
0
-5
-10
NF (dB)
8
7
6
5
1800
1900
2000
Frequency (MHz)
2100
2200
0
5
10
15
20
25
30
Normalized Gain (dB)
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
•
Phone +1-503-615-9000
•
FAX: +1-503-615-8900
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com
Page 3 of 5
Jan 2010
VG112
PCS/UMTS-band Variable Gain Amplifier
Application Note: Reduced Bias Configurations
The VG112 can be configured to be operated with lower bias current by varying the bias-adjust resistors – R3 and R4 – which
set the current draw for the two stages of the amplifier. The recommended circuit configurations shown previously in this
datasheet have the device operating in Class A operation. Lowering the current moderately can be done at the expense of the
linearity performance of the device. Measured data is given below and represents the VG112 configured for 2.14 GHz
applications. Since the second stage amplifier dominates the current draw of the 2-stage amplifier inside the VG112,
modifying R3 will have the greatest effect upon the overall current draw of the device. Data is shown though to display the Icc
and performance effects of the device when R4, the bias-adjust resistor for the first-stage amplifier, is modified when R3 is
fixed.
Performance Data at 2.14 GHz
R3
(Ω)
75
174
383
787
174
174
174
174
R4
(Ω)
0
0
0
0
101
270
499
699
Icq
(mA)
436
304
207
155
284
264
251
244
P
diss
(W)
2.18
1.52
1.04
0.78
1.42
1.32
1.26
1.22
Gain OIP3
(dB) (dBm)
24.0
46.3
23.7
42.5
23.3
33.4
22.5
27.7
23.5
42.3
23.3
41.6
23.0
40.2
22.7
38.9
P1dB
(dBm)
30.7
30.8
30.9
29.7
30.6
30.4
29.8
29.1
Current vs. R3 Value
450
400
Icc (mA)
350
300
250
200
0
100
200
R3 Value (Ohms)
300
400
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
•
Phone +1-503-615-9000
•
FAX: +1-503-615-8900
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com
Page 4 of 5
Jan 2010
VG112
PCS/UMTS-band Variable Gain Amplifier
Mechanical Information
This package is lead-free/green/RoHS-compliant. The plating material on the pins is annealed matte tin over copper. It is compatible with
both lead-free (maximum 260
°C
reflow temperature) and leaded (maximum 245
°C
reflow temperature) soldering processes.
Outline Drawing
Product Marking
The component will be lasermarked with a
“VG112-G” designator with an alphanumeric
lot code on the top surface of the package.
Tape and reel specifications for this part will be
located on the website in the “Application
Notes” section.
ESD / MSL Information
ESD Rating:
Value:
Test:
Standard:
ESD Rating:
Value:
Test:
Standard:
Class 1B
Passes 500V to <1000V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
Class IV
Passes 1000V to <2000V
Charged Device Model (CDM)
JEDEC Standard JESD22-C101
Mounting Configuration / Land Pattern
MSL Rating: Level 2 at +260
°C
convection reflow
Standard:
JEDEC Standard J-STD-020
Functional Pin Layout
Gain Ctrl
GND
7
GND 8
GND 9
GND 10
RF IN 11
GND 12
GND 13
GND 14
15
GND
16
GND
17
GND
18
GND
19
Vbias2
20
GND
21
GND
6
GND
2
5
4
3
Vbias1
1
28 GND
27 Vcc1
26 GND
25 RF OUT /
Vcc2
24 GND
23
RF OUT /
Vcc2
22 GND
GND
GND
GND
Amp
Variable
Attenuator
Pin No
1
5
11
19
23, 25
27
Even numbered pins and
backside paddle
3, 7, 9, 13,
15, 17, 21
Function
Vbias1
Gain Control
RF Input
Vbias2
RF Output / Vcc2
Vcc1
Ground
No connect or ground
Specifications and information are subject to change without notice
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