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BYS12-90/TR

Description
Schottky (diode and rectifier) ​​90 volt 1.5 amp 40 amp ifsm
Categorysemiconductor    Discrete semiconductor   
File Size333KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

BYS12-90/TR Overview

Schottky (diode and rectifier) ​​90 volt 1.5 amp 40 amp ifsm

BYS12-90/TR Parametric

Parameter NameAttribute value
MakerVishay
Product CategorySchottky (diodes and rectifiers)
RoHSno
productSchottky Diodes
Peak reverse voltage90 V
forward continuous current1.5 A
Maximum surge current40 A
ConfigurationSingle
forward voltage drop0.75 V @ 1 A
Maximum reverse leakage current100 uA
range of working temperature- 55 C to + 150 C
Installation styleSMD/SMT
Package/boxDO-214AC
EncapsulationReel
BYS12-90
Vishay General Semiconductor
Surface Mount Schottky Barrier Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Very low switching losses
• High surge capability
DO-214AC (SMA)
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case:
DO-214AC (SMA)
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity:
Color band denotes the cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
max.
1.5 A
90 V
40 A
0.75 V
150 °C
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
Peak forward surge current single half sine-wave
superimposed on rated load
Voltage rate of change (rated V
R
)
Junction and storage temperature range
8.3 ms
10 ms
V
RRM
I
F(AV)
I
FSM
dV/dt
T
J
, T
STG
SYMBOL
BYS12-90
BYS
209
90
1.5
40
30
10000
- 55 to + 150
V
A
A
V/µs
°C
UNIT
Document Number: 88950
Revision: 24-Jan-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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