ZTX655STZ datasheet, PDF - EEWORLD Datasheet

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ZTX655STZ: DescriptionBipolar small signal npn super E-line; Categorysemiconductor Discrete semiconductor; File Size60KB，2 Pages; ManufacturerAll Sensors; Environmental Compliance

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ZTX655STZ Overview

Bipolar small signal npn super E-line

ZTX655STZ Parametric

Parameter Name	Attribute value
Maker	All Sensors
Product Category	bipolar small signal
RoHS	yes
Configuration	Single
Transistor polarity	NPN
Installation style	Through Hole
Package/box	TO-92
Collector-emitter maximum voltage VCEO	150 V
Emitter-Base voltage VEBO	5 V
Collector continuous current	1 A
Maximum DC collector current	1 A
Power dissipation	1 W
Maximum operating frequency	30 MHz (Min)
Maximum operating temperature	+ 150 C
Encapsulation	Bulk
Minimum operating temperature	- 55 C

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NPN SILICON PLANAR

MEDIUM POWER TRANSISTORS

ISSUE 2 JULY 94

FEATURES

* 150 Volt V

CEO

* 1 Amp continuous current

* Low saturation voltage

* P

tot

= 1 Watt

ZTX654

ZTX655

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature

Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

ZTX654

125

5

2

1

E-Line

TO92 Compatible

ZTX655

150

UNIT

V

A

W

°C

-55 to +200

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Emitter Cut-Off

Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Base-Emitter

Turn-On Voltage

Static Forward

Current Transfer

Ratio

Transition

Frequency

Output Capacitance

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

f

T

C

obo

50

20

30

20

3-225

ZTX654

ZTX655

MIN.

125

5

100

0.5

1.1

1.0

50

20

30

20

MHz

pF

MAX. MIN.

150

5

100

0.5

1.1

1.0

MAX.

UNIT

V

nA

V

CONDITIONS.

I

C

=100

µ

A, I

E

=0

I

C

=10mA, I

B

=0*

I

E

=100

µ

A, I

C

=0

V

CB

=100V, I

E

=0

V

CB

=125V, I

E

=0

V

EB

=3V, I

C

=0

I

C

=500mA, I

B

=50mA*

I

C

=1A, I

B

=200mA*

I

C

=500mA, I

B

=50mA*

I

C

=500mA, V

CE

=5V*

I

C

=10mA, V

CE

=5V

I

C

=500mA, V

CE

=5V*

I

C

=1A, V

CE

=5V*

I

C

=10mA, V

CE

=20V

f=20MHz

V

CB

=20V, f=1MHz

ZTX655STZ Related Products

	ZTX655STZ	ZTX655	ZTX655STOB	ZTX655STOA
Description	Bipolar small signal npn super E-line	Bipolar small signal npn super E-line	Bipolar small signal npn super E-line	Bipolar small signal npn super E-line
Maker	All Sensors	All Sensors	All Sensors	All Sensors
Product Category	bipolar small signal	bipolar small signal	bipolar small signal	bipolar small signal
RoHS	yes	yes	yes	yes
Configuration	Single	Single	Single	Single
Transistor polarity	NPN	NPN	NPN	NPN
Installation style	Through Hole	Through Hole	Through Hole	Through Hole
Package/box	TO-92	TO-92	TO-92	TO-92
Collector-emitter maximum voltage VCEO	150 V	150 V	150 V	150 V
Emitter-Base voltage VEBO	5 V	5 V	5 V	5 V
Collector continuous current	1 A	1 A	1 A	1 A
Maximum DC collector current	1 A	1 A	1 A	1 A
Power dissipation	1 W	1 W	1 W	1 W
Maximum operating frequency	30 MHz (Min)	30 MHz (Min)	30 MHz (Min)	30 MHz (Min)
Maximum operating temperature	+ 150 C	+ 150 C	+ 200 C	+ 200 C
Encapsulation	Bulk	Bulk	Bulk	Bulk
Minimum operating temperature	- 55 C	- 55 C	- 55 C	- 55 C

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