SOT23 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 JANUARY 1996
FEATURES
* V
DS
- 200V
7
ZVP1320F
D
S
PARTMARKING DETAIL -
MT
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
SYMBOL MIN.
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
-100
80
25
50
15
5
8
8
8
16
-200
-1.5
-3.5
20
-10
-50
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
VALUE
-200
-35
-400
±
20
UNIT
V
mA
mA
V
mW
°C
330
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
MAX. UNIT CONDITIONS.
V
V
nA
µ
A
µ
A
I
D
=-1mA, V
GS
=0V
I
D
=-1mA, V
DS
= V
GS
V
GS
=
±
20V, V
DS
=0V
V
DS
=-200V, V
GS
=0V
V
DS
=-160V, V
GS
=0V,
T=125°C
(2)
V
DS
=-25V, V
GS
=-10V
V
GS
=-10V, I
D
=-50mA
V
DS
=-25V, I
D
=-50mA
mA
Ω
Static Drain-Source On-State R
DS(on)
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
mS
pF
pF
pF
ns
ns
ns
ns
V
DS
=-25V, V
GS
=0V, f=1MHz
V
DD
≈
-25V, I
D
=-50mA
(1) Measured under pulsed conditions. Width=300
µ
s. Duty cycle
≤
2% (2) Sample test.
(3) Switching times measured with 50
Ω
source impedance and <5ns rise time on a pulse generator
3 - 423
ZVP1320F
TYPICAL CHARACTERISTICS
-280
-240
V
GS=
-20V
-10V
-9V
-8V
-7V
-160
-120
-80
-40
-4V
0
0
-4
-8
-12
-16
-20 -24
-28 -32 -36
-40
-6V
-5V
-160
-140
V
GS
=
-20V
-10V
-8V
-7V
-6V
-5V
I
D
- Drain Current (mA)
-200
I
D
- Drain Current (mA)
-120
-100
-80
-60
-40
-20
0
0
-2
-4
-6
-8
-4V
-10
V
DS
- Drain Source
Voltage (Volts)
V
DS
- Drain Source
Voltage (Volts)
Output Characteristics
Saturation Characteristics
-10
V
DS-
Drain Source
Voltage (Volts)
-140
I
D
- Drain Current (mA)
-120
-100
-80
-60
-40
-20
0
V
DS=
-10V
-8
-6
I
D=
-60mA
-40mA
-2
-20mA
0
0
-2
-4
-6
-8
-10
-4
0
-2
-4
-6
-8
-10
V
GS-
Gate Source Voltage
(Volts)
V
GS-
Gate Source
Voltage (Volts)
Voltage Saturation Characteristics
Transfer Characteristics
g
fs-
Forward Transconductance(mS)
50
40
60
50
40
30
20
10
C-Capacitance (pF)
30
C
iss
20
V
DS=
-10V
10
C
oss
C
rss
-100
0
0
-20
-40
-60
-80
0
-20
-40
-60
-80
-100
-120
V
DS
-Drain Source Voltage
(Volts)
I
D
-Drain Current
(mA)
Capacitance v drain-source voltage
Transconductance v drain current
3 - 424
ZVP1320F
TYPICAL CHARACTERISTICS
g
fs
-Forward Transconductance (mS)
V
GS
-Gate Source Voltage (Volts)
60
50
40
30
20
10
0
0
-2
-4
-6
-8
-10
V
DS=
-10V
0
-2
-4
-6
-8
-10
-12
-14
-16
0
1.0
2.0
3.0
4.0
5.0
6.0
V
DS
=
-50V -100V -200V
I
D=
-150mA
V
GS
-Gate Source Voltage (Volts)
Q-Charge (nC)
Transconductance v gate-source voltage
Gate charge v gate-source voltage
R
DS(on)
-Drain Source Resistance
(Ω)
1000
2.4
Normalised R
DS(on)
and V
GS(th)
V
GS
=-5V
-6V
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-40 -20
Dr
ist
es
eR
c
ur
So
n-
ai
-8V
-10V
100
-20V
R
D
ce
an
)
on
S(
V
GS=
-10V
I
D=
-50mA
Gate Thresh
old
V
GS=
V
DS
I
D=
-1mA
Voltage V
GS
(TH)
10
-1
-10
-100
-1000
0 20 40 60 80 100 120 140 160 180
I
D-
Drain Current (mA)
T-Temperature (°C)
On-resistance v drain current
Normalised R
DS(on)
and V
GS(th)
vs Temperature
3 - 425
stm32/stm8
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