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Datasheet> All Categories > semiconductor> Discrete semiconductor> ZTX656STOB
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ZTX656STOB

Description
Bipolar small signal -
Categorysemiconductor    Discrete semiconductor   
File Size72KB，2 Pages
ManufacturerAll Sensors
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ZTX656STOB Overview

Bipolar small signal -

ZTX656STOB Parametric

Parameter NameAttribute value
MakerAll Sensors
RoHSno
ConfigurationSingle
Transistor polarityNPN
Installation styleThrough Hole
Package/boxTO-92
Collector-emitter maximum voltage VCEO200 V
Emitter-Base voltage VEBO5 V
Maximum DC collector current0.5 A
Power dissipation1000 mW
Maximum operating frequency30 MHz (Min)
Maximum operating temperature+ 200 C
Minimum operating temperature- 55 C

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NPN SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTORS
ISSUE 2 – JULY 94
FEATURES
* 300 Volt V
CEO
* 0.5 Amp continuous current
* P
tot
=1 Watt
ZTX656
ZTX657
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature
Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
ZTX656
200
200
5
1
0.5
1
E-Line
TO92 Compatible
ZTX657
300
300
UNIT
V
V
V
A
A
W
°C
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
Ratio
Transition
Frequency
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
50
40
30
ZTX656
MIN.
200
200
5
100
100
0.5
1
1
50
40
30
MHz
300
300
5
100
100
0.5
1
1
ZTX657
MAX.
MAX. MIN.
UNIT
V
V
V
nA
nA
nA
V
V
V
CONDITIONS.
I
C
=100
µ
A, I
E
=0
I
C
=10mA, I
B
=0*
I
E
=100
µ
A, I
C
=0
V
CB
=160V, I
E
=0
V
CB
=200V, I
E
=0
V
EB
=3V, I
C
=0
I
C
=100mA, I
B
=10mA*
I
C
=100mA, I
B
=10mA*
IC=100mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V
I
C
=10mA, V
CE
=5V
I
C
=10mA, V
CE
=20V
f=20MHz
3-227

ZTX656STOB Related Products

ZTX656STOB ZTX656 ZTX656STZ ZTX656STOA
Description Bipolar small signal - Digital transistor - Bipolar small signal - Bipolar small signal -
Maker All Sensors All Sensors All Sensors All Sensors
RoHS no no no no
Configuration Single Single Single Single
Transistor polarity NPN NPN NPN NPN
Installation style Through Hole Through Hole Through Hole Through Hole
Package/box TO-92 TO-92 TO-92 TO-92
Collector-emitter maximum voltage VCEO 200 V 200 V 200 V 200 V
Power dissipation 1000 mW 1000 mW 1000 mW 1000 mW
Maximum operating frequency 30 MHz (Min) 30 MHz (Min) 30 MHz (Min) 30 MHz (Min)
Maximum operating temperature + 200 C + 200 C + 200 C + 200 C
Minimum operating temperature - 55 C - 55 C - 55 C - 55 C
Emitter-Base voltage VEBO 5 V - 5 V 5 V
Maximum DC collector current 0.5 A - 0.5 A 0.5 A

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