SOT23 SILICON HIGH CURRENT
SCHOTTKY BARRIER DIODE ”SuperBAT”
ISSUE 1 - NOVEMBER 1997
7
1
ZHCS1006
C
1
A
3
FEATURES:
•
High current capability
•
Low V
F
APPLICATIONS:
•
Mobile telecomms, PCMIA & SCSI
•
DC-DC Conversion
PARTMARKING DETAILS : S16
2
3
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Continuous Reverse Voltage
Forward Current
Forward Voltage @ I
F
= 1000mA(typ)
Average Peak Forward Current;D.C.= 50%
Non Repetitive Forward Current t≤100µs
t≤10ms
Power Dissipation at T
amb
= 25° C
Storage Temperature Range
Junction Temperature
SYMBOL
V
R
I
F
V
F
I
FAV
I
FSM
P
tot
T
stg
T
j
VALUE
60
900
600
1600
12
5
500
-55 to + 150
125
SOT23
UNIT
V
mA
mV
mA
A
A
mW
°C
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25° C unless otherwise stated).
PARAMETER
Reverse Breakdown
Voltage
Forward Voltage
SYMBOL
V
(BR)R
V
F
MIN.
60
TYP.
80
245
275
330
395
455
510
620
50
17
12
280
320
390
470
530
600
740
100
MAX.
UNIT
V
mV
mV
mV
mV
mV
mV
mV
µA
pF
ns
CONDITIONS.
I
R
= 300µA
I
F
=
I
F
=
I
F
=
I
F
=
I
F
=
I
F
=
I
F
=
50mA*
100mA*
250mA*
500mA*
750mA*
1000mA*
1500mA*
Reverse Current
Diode Capacitance
Reverse Recovery
Time
I
R
C
D
t
rr
V
R
= 45V
f= 1MHz,V
R
= 25V
switched from
I
F
= 500mA to I
R
=
500mA
Measured at I
R
= 50mA
*Measured under pulsed conditions. Pulse width= 300µs. Duty cycle
≤2%
ZHCS1006
TYPICAL CHARACTERISTICS
MAXIMUM TRANSIENT THERMAL RESISTANCE
* Reference above figure, devices were mounted on a 15mmx15mm ceramic substrate.
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