KSP2222A NPN General Purpose Amplifier
July 2006
KSP2222A
NPN General Purpose Amplifier
Features
• Collector-Emitter Voltage: V
CEO
= 40V
• Collector Power Dissipation: P
C
(max)=625mW
• Available as PN2222A
TO-92
tm
1 2 3
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings *
T
Symbol
V
CBO
V
CEO
V
EBO
I
C
T
J
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector current
Junction Temperature
Storage Temperature
a
= 25°C unless otherwise noted
Parameter
Value
75
40
6.0
600
+150
-55 ~ +150
Units
V
V
V
mA
°C
°C
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
T =25°C unless otherwise noted
a
Symbol
P
C
R
θJC
R
θJA
Parameter
Collector Power Dissipation, by R
θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
a
Max
625
83.3
200
Units
mW
°C/W
°C/W
Electrical Characteristics *
T
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
= 25°C unless otherwise noted
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Test Condition
I
C
= 10µA, I
E
= 0
I
C
= 10mA, I
B
= 0
I
E
= 10µA, I
C
= 0
V
CB
= 60V, I
E
= 0
V
EB
= 3.0V, I
C
= 0
V
CE
= 10V, I
C
= 0.1mA,
V
CE
= 10V, I
C
= 1mA,
V
CE
= 10V, I
C
= 10mA,
V
CE
= 10V, I
C
= 150mA,
V
CE
= 10V, I
C
= 500mA,
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
I
C
= 20mA, V
CE
= 20V, f = 100MHz
V
CB
= 10V, I
E
= 0, f = 1.0MHz
V
CC
= 30V, I
C
= 150mA,
I
B1
= 15mA, V
BE(off)
= 0.5V
V
CC
= 30V, I
C
= 150mA,
I
B1
= I
B1
= 15mA
I
C
= 100µA, V
CE
= 10V,
R
S
= 1KΩ , f = 1.0KHz
Min.
75
40
6.0
Typ.
Max.
Units
V
V
V
µA
nA
0.01
10
35
50
75
100
40
300
0.3
1
1.2
2.0
8
35
285
4
V
V
V
V
MHz
pF
ns
ns
dB
V
CE(sat)
V
BE(sat)
f
T
C
obo
t
ON
t
OFF
NF
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn On Time
Turn Off Time
Noise Figure
0.6
300
* DC Item are tested by Pulse Test : Pulse Width≤300us, Duty Cycle≤2%
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
KSP2222A Rev. B
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Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve
design.
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Rev. I20
Analog electronics
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