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2SC6026-Y(TPL3)

Description
Bipolar small signal 100ma 50v
CategoryDiscrete semiconductor    The transistor   
File Size132KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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2SC6026-Y(TPL3) Overview

Bipolar small signal 100ma 50v

2SC6026-Y(TPL3) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codeunknow
Base Number Matches1
2SC6026
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC6026
General-Purpose Amplifier Applications
High voltage and high current
: V
CEO
= 50 V, I
C
= 100 mA (max)
Excellent h
FE
linearity : h
FE
(I
C
= 0.1 mA)/h
FE
(I
C
= 2 mA) = 0.95 (typ.)
0.6±0.05
0.15±0.05
Unit: mm
0.35±0.05
High h
FE
Lead (Pb) free
:
h
FE
= 120~400
Complementary to 2SA2154
1
3
2
0.8±0.05
1.0±0.05
0.1±0.05
Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
60
50
5
100
30
50
150
−55~150
Unit
V
V
V
mA
mA
mW
°C
°C
0.48
-0.04
+0.02
0.1±0.05
fSM
JEDEC
JEITA
TOSHIBA
1.BASE
2.EMITTER
3.COLLECTOR
2-1E1A
Weight: 0.0006 g (typ.)
Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE
(Note)
V
CE (sat)
f
T
C
ob
Test Condition
V
CB
=
60 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
6 V, I
C
=
2 mA
I
C
=
100 mA, I
B
=
10 mA
V
CE
=
10 V, I
C
=
1 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
Min
120
60
Typ.
0.1
0.95
Max
0.1
0.1
400
0.25
Unit
µA
µA
V
MHz
pF
Note: h
FE
classification Y (F): 120~240, GR (H): 200~400
( ) marking symbol
Marking
Type Name
h
FE
Rank
7F
1
2005-03-23
0.2±0.05
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