NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 FEB 94
FEATURES
* 150 Volt V
CEO
* 1 Amp continuous current
* Low saturation voltage
* P
tot
= 1 Watt
FXT655
B
C
E
REFER TO ZTX655 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipationat T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
E-Line
TO92 Compatible
VALUE
150
150
5
2
1
1
-55 to +200
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
MIN.
150
150
5
100
100
0.5
0.5
1.1
1
50
50
20
30
20
MHz
pF
TYP.
MAX.
UNIT
V
V
V
nA
nA
V
V
V
V
CONDITIONS.
I
C
=100
µ
A, I
E
=0
I
C
=10mA, I
B
=0*
I
E
=100
µ
A, I
C
=0
V
CB
=125V, I
E
=0
V
EB
=3V, I
C
=0
I
C
=500mA, I
B
=50mA*
I
C
=1A, I
B
=200mA*
I
C
=500mA, I
B
=50mA*
IC=500mA, V
CE
=5V*
I
C
=10mA, V
CE
=5V
I
C
=500mA, V
CE
=5V*
I
C
=1A, V
CE
=5V*
I
C
=10mA, V
CE
=20V
f=20MHz
V
CB
=20V, f=1MHz
Emitter Cut-Off Current I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
Static Forward Current h
FE
Transfer Ratio
Transition
Frequency
Output Capacitance
f
T
C
obo
*Measured under pulsed conditions. Pulse Width=300
µ
s. Duty cycle
≤
2%
3-49
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