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DN2535N3

Description
mosfet small signal 350v 25ohm
CategoryDiscrete semiconductor    The transistor   
File Size641KB,8 Pages
ManufacturerSupertex
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DN2535N3 Overview

mosfet small signal 350v 25ohm

DN2535N3 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSupertex
Parts packaging codeTO-92
package instructionN3, 3 PIN
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH INPUT IMPEDANCE
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage350 V
Maximum drain current (ID)0.12 A
Maximum drain-source on-resistance25 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)5 pF
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power consumption environment1 W
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Supertex inc.
N-Channel Depletion-Mode
Vertical DMOS FETs
Features
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
DN2540
General Description
The Supertex DN2540 is a low threshold depletion mode
(normally-on) transistor utilizing an advanced vertical
DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces a device
with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Applications
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecom
Ordering Information
Device
DN2540
Package Options
TO-92
DN2540N3-G
TO-220
DN2540N5-G
TO-243AA (SOT-89)
DN2540N8-G
BV
DSX
/BV
DGX
(V)
R
DS(ON)
(max)
(Ω)
I
DSS
(min)
(mA)
400
25
150
-G indicates package is RoHS compliant (‘Green’)
Pin Configurations
DRAIN
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage
temperature
Soldering temperature*
Value
BV
DSX
BV
DGX
±20V
-55
O
C to +150
O
C
300
O
C
DRAIN
SOURCE
GATE
TO-92 (N3)
GATE
SOURCE
DRAIN
TO-220 (N5)
DRAIN
SOURCE
DRAIN
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*
Distance of 1.6mm from case for 10 seconds.
GATE
TO-243AA (SOT-89) (N8)
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
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