AP501
Product Features
•
1930 – 1990 MHz
•
32.5 dB Gain
•
+36 dBm P1dB
•
-62 dBc ACPR
@ 27 dBm IS-95A linear power
PCS-band 4W HBT Amplifier Module
Product Information
Product Description
The AP501 is a high dynamic range power amplifier in a
RoHS-compliant flange-mount package. The multi-stage
amplifier module has 32.5 dB gain, while being able to
achieve high performance for PCS-band applications with
+36 dBm of compressed 1dB power. The module has been
internally optimized for driver applications provide -62 dBc
ACPR at 27 dBm for IS-95A applications or -55 dBc ACLR
at 26.5 for wCDMA applications. The module can be biased
down for current when higher efficiency is required.
The AP501 uses a high reliability InGaP/GaAs HBT process
technology and does not require any external matching
components. The module operates off a +12V supply and
does not requiring any negative biasing voltages; an internal
active bias allows the amplifier to maintain high linearity
over temperature. It has the added feature of a +5V power
down control pin. A low-cost metal housing allows the
device to have a low thermal resistance to ensure long
lifetimes. All devices are 100% RF and DC tested.
Functional Diagram
1
2
3
4
5
6
•
-55 dBc ACLR
@ 26.5 dBm wCDMA linear power
Top View
Pin No.
1
2/4
3/5
6
Case
Function
RF Output
Vcc
Vpd
RF Input
Ground
•
+12 V Single Supply
•
Power Down Mode
•
Bias Current Adjustable
•
RoHS-compliant flange-mount pkg
Applications
•
Final stage amplifiers for repeaters
•
Optimized for driver amplifier
The AP501 is targeted for use as a driver or final stage amplifier
PA mobile infrastructure
in wireless infrastructure where high linearity and high power is
required. This combination makes the device an excellent
candidate for next generation multi-carrier 3G base stations.
Specifications
25 ºC, V
cc
=12V, V
pd
=5V, I
cq
=820mA, R7=0Ω, 50Ω unmatched fixture
Typical Performance
(4)
Units Min
Typ Max
Parameter
Operating Current @ 27 dBm
Quiescent Current, Icq
Device Voltage, Vcc
R7 value
Test Frequency
Power Gain
IS-95A ACPR @ 27dBm
(1)
wCDMA ACLR @ 26.5dBm
(2)
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Parameter
Units Config1 Config2
mA
mA
V
Ω
MHz
dB
dBc
dBc
dB
dB
dBm
dBm
840
820
+12
0
1960
32.4
-61.8
-55
22
6
+36
+52
420
250
+12
730
1960
30.5
-53
-49
20
8
+36
+52
Operational Bandwidth
MHz
Test Frequency
MHz
Power Gain
dB
(1)
IS-95A ACPR @ 27dBm
dBc
(2)
wCDMA ACLR @ 26.5dBm
dBc
Input Return Loss
dB
Output Return Loss
dB
Output P1dB
dBm
Output IP3
dBm
Operating Current @ 27 dBm
mA
Quiescent Current, Icq
mA
Device Voltage, Vcc
V
(3)
Device Voltage, Vpd
V
Load Stability
VSWR
1930 – 1990
1960
30
32.4
30.5
-61.8
-55
-55
22
6
+36
+52
790
840
940
780
820
920
+12
+5
10:1
4. Configuration 1 has the module biased in Class AB and is detailed on page 2 of the datasheet.
Performance is shown at 25 ºC, Vcc=12V, Vpd=5V, Icq=820mA, R7=0Ω, 50Ω unmatched fixture.
Configuration 2 has the module biased in near Class B and is detailed on page 3 of the datasheet.
Performance is shown at 25 ºC, Vcc=12V, Vpd=5V, Icq=250mA, R7=730Ω, 50Ω tuned fixture.
1. IS-95A signal modulation, 9 channels forward, 1.23 MHz BW, ±885 kHz offset.
2. 3GPP wCDMA signal modulation, Test model 1+32 DPCH, 3.84 MHz BW, ±5 MHz offset.
3. Pull-down voltage: 0V = “OFF”, 5V=”ON”
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
with output terminated in 50
Ω
-40 to +85
°C
-55 to +150
°C
+15 dBm
Rating
Ordering Information
Part No.
AP501
AP501-PCB
Description
PCS-band 4W HBT Amplifier Module
Fully-Assembled Evaluation Board
(Class AB configuration, Icq=820mA)
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com, www.TriQuint.com
Page 1 of 5 July 2008
AP501
PCS-band 4W HBT Amplifier Module
Product Information
Performance Graphs – Class AB Configuration (AP501-PCB)
The AP501-PCB and AP501 module is configured for Class AB by default. The resistor – R7 – which sets the current draw for
the amplifier is set at 0
Ω
in this configuration. Increasing that value will decrease the quiescent and operating current of the
amplifier module, as described on the next page.
+12V
GND
+12V
10μF
DNP
+5V
DNP
0Ω
0Ω
DNP
100pF
.01μF
DNP
RF IN
0Ω
DNP
DNP
6
.01μF
DNP
100pF
RF OUT
0Ω
Notes:
1. Please note that for reliable operation, the evaluation board will have to
be mounted to a much larger heat sink during operation and in laboratory
environments to dissipate the power consumed by the device. The use of
a convection fan is also recommended in laboratory environments.
Details of the mounting holes used in the WJ heatsink are given on the
last page of this datasheet.
2. The area around the module underneath the PCB should not contain any
soldermask in order to maintain good RF grounding.
3. For proper and safe operation in the laboratory, the power-on sequencing
should be followed:
a. Connect RF In and Out
b. Connect the voltages and ground pins as shown in the circuit.
c. Apply the RF signal
d. Power down with the reverse sequence
5
4
3
2
1
DNP
DNP
Narrowband S-Parameters
+25 °C, Icq=850mA
PAE / Icc vs. Output Power
0
-5
S11, S22 (dB)
Gain / Output Power vs. Input Power
25
20
Pout (dBm)
33
32
S21 (dB)
1000
950
Icc (mA)
1960 MHz, +25 °C, Icq=850mA
Icc
PAE
36
34
PAE (%)
1960 MHz, +25 °C, Icq=850mA
32.5
32
31.5
31
Pout
Gain
30.5
30
Gain (dB)
31
30
29
28
27
1930
1950
1970
S21
S11
S22
-10
-15
-20
-25
-30
1990
900
850
800
750
24
26
28
30
32
34
Output Power (dBm)
ACPR vs. Channel Power
IS-95A, 9 Channels forward, 1FA, 1960 MHz, Icq=850mA
15
10
5
0
32
30
28
26
-6
-4
-2
0
2
4
6
Input Power (dBm)
ACLR vs. Channel Power
Frequency (MHz)
Wideband S-Parameters
+25 °C, Icq=850mA
+25°C, 3GPP wCDMA, 1FA, 1+32 DPCH, ±5 MHz offset, 1960 MHz, Icq=850mA
40
Magnitude (dB)
ACPR (dBc)
ACLR (dBc)
20
0
-20
-40
0
S21
S11
S22
-50
-60
-70
-80
-90
±885 kHz
±1.25 MHz
-40
-40 C
-50
+25 C
+85 C
-60
-70
22
23
24
25
26
27
28
18
20
22
24
26
28
Output Channel Power (dBm)
Output Channel Power (dBm)
Specifications and information are subject to change without notice
500
1000
1500
2000
2500
3000
Frequency (MHz)
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com, www.TriQuint.com
Page 2 of 5 July 2008
AP501
PCS-band 4W HBT Amplifier Module
Product Information
Performance Graphs – Class B Configuration
The AP501 can be adjusted to operate at lower current biasing levels by modifying the R7 resistor for improved efficiency
performance. The configuration shown on this page has the AP501 operating with Icq = 250 mA (Icc = 400 mA @ 27 dBm).
Output L-C matching components have been added externally on the circuit to optimize the amplifier for ACPR performance at
this biasing configuration.
+12V
GND
+12V
10μF
DNP
+5V
DNP
0Ω
730Ω
DNP
100pF
.01μF
DNP
RF IN
0Ω
DNP
DNP
6
.01μF
DNP
100pF
RF OUT
2.2nH
5
4
3
2
1
DNP
R2
0.2pF
Notes:
1. Please note that for reliable operation, the evaluation board will have to
be mounted to a much larger heat sink during operation and in laboratory
environments to dissipate the power consumed by the device. The use of
a convection fan is also recommended in laboratory environments.
Details of the mounting holes used in the WJ heatsink are given on the
last page of this datasheet.
2. The area around the module underneath the PCB should not contain any
soldermask in order to maintain good RF grounding.
3. For proper and safe operation in the laboratory, the power-on sequencing
should be followed:
a. Connect RF In and Out
b. Connect the voltages and ground pins as shown in the circuit.
c. Apply the RF signal
d. Power down with the reverse sequence
Narrowband S-Parameters
+25 °C, Icq=250mA
PAE / Icc vs. Output Power
+25 °C, 1960 MHz, Icq=250mA
OIP3 / IMD vs. Output Power
50%
31
30
S21 (dB)
0
-5
S11, S22 (dB)
500
-20
-30
PAE (dBm)
+25 °C, 1960 MHz, Icq=250mA
55
50
45
40
35
OIP3 (dBm)
Icc
400
Icc (mA)
PAE
40%
IMD (dBc)
29
28
27
26
1930
-10
S21
S11
-15
S22
-20
-25
1990
300
200
100
0
24
25
26
27
28
29
30
Output Power (dBm)
30%
20%
10%
0%
-40
-50
-60
IMD
-70
22
24
26
28
30
Output Power / tone (dBm)
ACLR vs. Channel Power
OIP3
30
1950
1970
Frequency (MHz)
ACPR vs. Channel Power
ACPR vs. Channel Power
+25 °C, IS-95A, 9 Ch. Fwd, 7FA, fo=1935 MHz, Icq=250mA
-40
+25 °C, IS-95A, 9 Ch. Fwd, 1FA, fo=1960 MHz, Icq=250mA
±885 kHz
ACPR (dBc)
ACPR (dBc)
-40
-40
+25 °C, 3GPP W-CDMA, Test Model 1+32 DPCH, 1960 MHz, Icq=250mA
±885 kHz
ACLR (dBc)
-50
±1.25 MHz
-50
±1.25 MHz
±5 MHz
±10 MHz
-50
-60
-60
-60
-70
25
26
27
28
29
30
31
Output Channel Power (dBm)
-70
18
19
20
21
22
23
24
25
Output Channel Power (dBm)
-70
20
21
22
23
24
25
26
27
28
Output Channel Power (dBm)
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com, www.TriQuint.com
Page 3 of 5 July 2008
AP501
PCS-band 4W HBT Amplifier Module
Product Information
MTTF Calculation
The MTTF of the AP501 can be calculated by first
determining how much power is being dissipated by the
amplifier module. Because the device’s intended application
is to be a power amplifier pre-driver or final stage output
amplifier, the output RF power of the amplifier will help
lower the overall power dissipation. In addition, the
amplifier can be biased with different quiescent currents, so
the calculation of the MTTF is custom to each application.
The power dissipation of the device can be calculated with
the following equation:
P
diss
= V
cc
* I
cc
– (Output RF Power – Input RF Power),
V
cc
= Operating supply voltage =
12V
I
cc
= Operating current
{The RF power is converted to Watts}
While the maximum recommended case temperature on the
datasheet is listed at 85
˚C,
it is suggested that customers
maintain an MTTF above 1 million hours. This would
convert to a derating curve for maximum case temperature vs.
power dissipation as shown in the plot below.
Maximum Recommended Case Temperature vs. Power Dissipation
to maintain 1 million hours MTTF
90
Maximum Case Temperature (°C)
To calculate the MTTF for the module, the junction
temperature needs to be determined. This can be easily
calculated with the module’s power dissipation, the thermal
resistance value, and the case temperature of operation:
T
j
= P
diss
* R
th
+ T
case
T
j
= Junction temperature
P
diss
= Power dissipation (calculated from above)
R
th
= Thermal resistance =
9 ˚C/W
T
case
= Case temperature of module’s heat sink
From a numerical standpoint, the MTTF can be calculated
using the Arrhenius equation:
MTTF = A* e
(Ea/k/Tj)
A = Pre-exponential Factor =
6.087 x 10
-11
hours
Ea = Activation Energy =
1.39 eV
k = Boltzmann’s Constant =
8.617 x 10
-5
eV/ ºK
T
j
= Junction Temperature (ºK) = T
j
(ºC) + 273
A graphical view of the MTTF can be shown in the plot
below.
MTTF vs. Junction Temperature
1.E+07
MTTF (hours)
80
1.E+06
70
60
50
4
5
6
7
8
9
10
11
12
Power Dissipation (Watts)
1.E+05
130
140
150
160
170
180
Junction Temperature (°C)
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com, www.TriQuint.com
Page 4 of 5 July 2008
AP501
PCS-band 4W HBT Amplifier Module
Product Information
Outline Drawing
AP501
1
2
3
4
5
6
Outline Drawing for the Heatsink with the
WJ Evaluation Board
Product Marking
The device will be marked with an “AP501” designator
with an alphanumeric lot code on the top surface of the
package noted as “ABCD” on the drawing.
A
manufacturing date will also be printed as “XXYY”, where
the “XX” represents the week number from 1 – 52.
The product will be shipped in tubes in multiples of 15.
ESD / MSL Information
ESD Rating:
Value:
Test:
Standard:
ESD Rating:
Value:
Test:
Standard:
Class 1C
Passes at
≥
1,000 to < 2,000 volts
Human Body Model (HBM)
JEDEC Standard JESD22-A114
Class III
Passes
≥
500 to < 1,000 volts
Charged Device Model (CDM)
JEDEC Standard JESD22-C101
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com, www.TriQuint.com
Page 5 of 5 July 2008
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