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ZXM66P03N8TC

Description
mosfet small signal 30v P chnl hdmos
Categorysemiconductor    Discrete semiconductor   
File Size59KB,4 Pages
ManufacturerAll Sensors
Environmental Compliance
Download Datasheet Parametric View All

ZXM66P03N8TC Overview

mosfet small signal 30v P chnl hdmos

ZXM66P03N8TC Parametric

Parameter NameAttribute value
MakerAll Sensors
Product CategoryMOSFET small signal
RoHSyes
ConfigurationSingle Quad Drain Triple Source
Transistor polarityP-Channel
Resistor drain/source RDS (on)0.035 Ohms
Drain/source breakdown voltage- 30 V
Gate/source breakdown voltage+/- 20 V
Drain continuous current- 7.9 A
Power dissipation1.56 W
Maximum operating temperature+ 150 C
Installation styleSMD/SMT
Package/boxSO-8
EncapsulationReel
Minimum operating temperature- 55 C
ZXM66P03N8
30V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
=-30V; R
DS(ON)
=0.025 ; I
D
=-7.9A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
SO8
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS
DC - DC converters
Power management functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
ZXM66P03N8TA
ZXM66P03N8TC
REEL SIZE
7”
13”
TAPE WIDTH
12mm
12mm
QUANTITY
PER REEL
2 1
500 units
2500 units
S
S
S
D
D
D
3
DEVICE MARKING
ZXM
4
66P03
Top View
ISSUE 1 - JANUARY 2006
1
SEMICONDUCTORS
5
6
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