SOT23 NPN SILICON PLANAR
GENERAL PURPOSE TRANSISTORS
ISSUE 6 - JANUARY 1997
PARTMARKING DETAILS
BC846AZ1A
BC846B1B
BC847AZ1E
BC847B1F
BC847C1GZ
BC848A1JZ
BC848B1K
BC848CZ1L
BC849B2B
BC849C2C
BC850B2FZ
BC850C-Z2G
COMPLEMENTARY TYPES
BC846
BC847
BC848
BC849
BC850
BC856
BC857
BC858
BC859
BC860
BC846
BC848
BC850
BC847
BC849
C
B
SOT23
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
BC846
BC847
BC848
BC849
BC850
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Peak Base Current
Peak Emitter Current
Power Dissipation at T
amb
=25°C
Operating and Storage
Temperature Range
PARAMETER
SYMBOL
Max
Collector Cut-Off Current I
CBO
Max
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
CM
I
BM
I
EM
P
tot
T
j
:T
stg
80
80
65
6
50
50
45
30
30
30
100
200
200
200
330
-55 to +150
30
30
30
5
50
50
45
UNIT
V
V
V
V
mA
mA
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
BC846
BC847 BC848 BC849 BC850
15
5
90
250
200
600
300
600
700
900
580
660
700
770
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
V
CE(sat)
Typ
Max.
Typ
Max.
Typ
Max.
V
BE(sat)
Typ
Typ
Base-Emitter Voltage
V
BE
Min
Typ
Max
Max
UNIT CONDITIONS.
nA
V
CB
= 30V
V
CB
= 30V
µ
A
T
amb
=150°C
mV I
C
=10mA,
mV I
B
=0.5mA
mV I
C
=100mA,
mV I
B
=5mA
mV I
C
=10mA*
mV
mV I
C
=10mA,
I
B
=0.5mA
mV I
C
=100mA,
I
B
=5mA
mV I
C
=2mA
mV V
CE
=5V
mV
mV
I
C
=10mA
V
CE
=5V
* Collector-Emitter Saturation Voltage at I
C
= 10mA for the characteristics going through the
operating point I
C
= 11mA, V
CE
= 1V at constant base current.
ELECTRICAL CHARACTERISTICS (Continued)
PARAMETER
Static
Group VI
Forward
Current Ratio
Group A
SYMBOL
h
FE
Min
Typ
Max
Typ
Min
Typ
Max
Typ
Group B
h
FE
Typ
Min
Typ
Max
Typ
Group C
h
FE
Typ.
Min
Typ
Max
Typ
Transition Frequency
Collector-Base
Capacitance
Emitter-Base
Capacitance
Noise Figure
f
T
C
obo
C
ib0
N
Typ
Typ
Max
Typ
Typ
Max
Typ
Max
2
10
2
10
200
200
270
420
500
800
BC846
BC847 BC848 BC849 BC850
BC846
BC848
BC850
BC847
BC849
UNIT CONDITIONS.
I
C
=2mA, V
CE
=5V
75
110
150
90
110
180
220
120
75
110
150
90
110
180
220
120
75
110
150
90
110
180
220
120
150
200
290
450
200
270
420
500
800
400
300
2.5
4.5
9
2
10
h
FE
I
C
=0.01mA, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=100mA, V
CE
=5V
I
C
=0.01mA, V
CE
=5V
I
C
=2mA, V
CE
=5V
270
420
500
800
270
420
500
800
I
C
=100mA, V
CE
=5V
I
C
=0.01mA, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=100mA, V
CE
=5V
MHz I
C
=10mA, V
CE
=5V
f=100MHz
pF
pF
pF
V
CB
=10V f=1MHz
V
EB
=0.5V f=1MHz
V
CE
= 5V, I
C
=200
µ
A,
R
G
=2k
Ω
, f=1kHz,
∆
f=200Hz
V
CE
= 5V, I
C
=200
µ
A,
R
G
=2k
Ω
, f=30Hz to
15kHz at -3dB
points
V
CE
= 5V, I
C
=200
µ
A,
R
G
=2k
Ω
, f=10Hz to
50Hz at -3dB
points
1.2
4
1.2
4
1
4
1
3
dB
dB
dB
dB
Equivalent Noise
Voltage
e
n
Max.
110
110
nV
Spice parameter data is available upon request for this device
Embedded System
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