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TN2640N3-P002

Description
mosfet small signal 400v 5ohm
Categorysemiconductor    Discrete semiconductor   
File Size112KB,2 Pages
ManufacturerSupertex
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TN2640N3-P002 Overview

mosfet small signal 400v 5ohm

TN2640N3-P002 Parametric

Parameter NameAttribute value
MakerSupertex
Product CategoryMOSFET small signal
RoHSno
ConfigurationSingle
Transistor polarityN-Channel
Resistor drain/source RDS (on)5 Ohms
Drain/source breakdown voltage400 V
Gate/source breakdown voltage+/- 20 V
Drain continuous current2 A
Power dissipation1 W
Maximum operating temperature+ 150 C
Installation styleThrough Hole
Package/boxTO-92
Minimum operating temperature- 55 C
Product
Summary
Sheet
TN2640 N-Channel
Enhancement-Mode DMOS FET
Low Threshold DMOS Technology
Applications
!
DC-DC converters
!
Solid state relays
!
Ultrasound pulsers
!
Telecom switches
!
Photo voltaic drivers
!
Analog switches
Switching Waveforms and Test Circuit
Product Overview:
TN2640K4 N-Channel Enhancement-Mode DMOS FET. The device features fast switching
speeds, low parasitic capacitances and a low gate threshold for ease of driving the FET. It’s D-
Pak package gives designers the flexibility to use the device in a wide range of power switching
and amplifying applications. It has a high breakdown voltage (400V), a low on-resistance (5.0W)
and a low input capacitance (225pF) for fast switching applications. Adding these features into
the D-Pak package increases the power dissipation capability to 2.5W in small footprints
utilizing surface mount technology. It’s low input and output leakage feature improves standby
power dissipation while minimizing signal attenuation.
Features:
Low threshold — 2.0V max.
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown compared
to bipolar transistors
Low input and output leakage
Addition of D-Pak option
Benefits:
Can be operated directly from logic level input signals.
Eliminates the need for a level translator.
Eliminates the need to supply DC current into the gate.
Improves overall efficiency.
Maximizes switching speed to help improve overall effi-
ciency.
Improves overall efficiency
Maximizes efficiency, minimizes power dissipation.
Improves overall reliability.
Improves measurement accuracy. Minimizes signal
attenuation.
Increases the power dissipation capability for surface
mount technology to 2.5W.
12/21/01

TN2640N3-P002 Related Products

TN2640N3-P002 TN2640N3-P003-G TN2640N3-P014-G TN2640N3-P014 TN2640N3-P003 TN2640N3-P002-G TN2640N3-P013 TN2640N3-P013-G
Description mosfet small signal 400v 5ohm mosfet small signal 400v 5ohm mosfet small signal 400v 5ohm mosfet small signal 400v 5ohm mosfet small signal 400v 5ohm mosfet small signal 400v 5ohm mosfet small signal 400v 5ohm mosfet small signal 400v 5ohm
Maker Supertex Supertex Supertex Supertex Supertex Supertex Supertex Supertex
Product Category MOSFET small signal MOSFET small signal MOSFET small signal MOSFET small signal MOSFET small signal MOSFET small signal MOSFET small signal MOSFET small signal
RoHS no yes yes no no yes no yes
Configuration Single Single Single Single Single Single Single Single
Transistor polarity N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Resistor drain/source RDS (on) 5 Ohms 5 Ohms 5 Ohms 5 Ohms 5 Ohms 5 Ohms 5 Ohms 5 Ohms
Drain/source breakdown voltage 400 V 400 V 400 V 400 V 400 V 400 V 400 V 400 V
Gate/source breakdown voltage +/- 20 V +/- 20 V +/- 20 V +/- 20 V +/- 20 V +/- 20 V +/- 20 V +/- 20 V
Drain continuous current 2 A 2 A 2 A 2 A 2 A 2 A 2 A 2 A
Power dissipation 1 W 1 W 1 W 1 W 1 W 1 W 1 W 1 W
Maximum operating temperature + 150 C + 150 C + 150 C + 150 C + 150 C + 150 C + 150 C + 150 C
Installation style Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package/box TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
Minimum operating temperature - 55 C - 55 C - 55 C - 55 C - 55 C - 55 C - 55 C - 55 C
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