Supertex inc.
N-Channel Depletion-Mode
Vertical DMOS FETs
Features
►
►
►
►
►
►
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
DN2540
General Description
The Supertex DN2540 is a low threshold depletion mode
(normally-on) transistor utilizing an advanced vertical
DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces a device
with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Applications
►
►
►
►
►
►
►
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecom
Ordering Information
Device
DN2540
Package Options
TO-92
DN2540N3-G
TO-220
DN2540N5-G
TO-243AA (SOT-89)
DN2540N8-G
BV
DSX
/BV
DGX
(V)
R
DS(ON)
(max)
(Ω)
I
DSS
(min)
(mA)
400
25
150
-G indicates package is RoHS compliant (‘Green’)
Pin Configurations
DRAIN
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage
temperature
Soldering temperature*
Value
BV
DSX
BV
DGX
±20V
-55
O
C to +150
O
C
300
O
C
DRAIN
SOURCE
GATE
TO-92 (N3)
GATE
SOURCE
DRAIN
TO-220 (N5)
DRAIN
SOURCE
DRAIN
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*
Distance of 1.6mm from case for 10 seconds.
GATE
TO-243AA (SOT-89) (N8)
Supertex inc.
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
DN2540
Product Marking
S i
DN
2 5 4 0
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
TO-92 (N3)
DN5DW
DN2540N5
LLLLLLLLL
YYWW
L = Lot Number
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
Package may or may not include the following marks: Si or
TO-220 (N5)
Package may or may not include the following marks: Si or
W = Code for week sealed
= “Green” Packaging
TO-243AA (SOT-89) (N8)
Thermal Characteristics
Package
TO-92
TO-220
TO-243AA
(continuous)
(mA)
I
D
†
(pulsed)
(mA)
I
D
Power Dissipation
@T
C
= 25
O
C
(W)
O
( C/W)
θ
jc
( C/W)
O
θ
ja
(mA)
I
DR
†
(mA)
I
DRM
120
500
170
500
500
500
1.0
15
(T
A
= 25
O
C)
125
8.3
15
170
70
78
‡
120
500
170
500
500
500
1.6
‡
Notes:
† I
D
(continuous) is limited by max rated T
j
.
‡ Mounted on FR5 board, 25mm x 25mm x 1.57mm, T
A
= 25
O
C.
Electrical Characteristics
(T
A
= 25
O
C unless otherwise specified)
Sym
BV
DSX
V
GS(OFF)
ΔV
GS(OFF)
I
GSS
I
D(OFF)
I
DSS
R
DS(ON)
ΔR
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
Parameter
Drain-to-source breakdown voltage
Gate-to-source off voltage
Change in V
GS(OFF)
with temperature
Gate body leakage current
Drain-to-source leakage current
Saturated drain-to-source current
Static drain-to-source on-state
resistance
Change in R
DS(ON)
with temperature
Forward transconductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Min
400
-1.5
-
-
-
-
150
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
17
-
325
200
12
1.0
Max
-
-3.5
-4.5
100
10
1.0
-
25
1.1
-
300
30
5.0
pF
Units
V
V
mV/
O
C
nA
µA
mA
mA
Ω
%/
O
C
mmho
Conditions
V
GS
= -5.0V, I
D
= 100µA
V
DS
= 25V, I
D
= 10µA
V
DS
= 25V, I
D
= 10µA
V
GS
= ±20V, V
DS
= 0V
V
DS
= Max rating, V
GS
= -10V
V
DS
= 0.8 Max Rating,
V
GS
= -10V, T
A
= 125
O
C
V
GS
= 0V, V
DS
= 25V
V
GS
= 0V, I
D
= 120mA
V
GS
= 0V, I
D
= 120mA
V
DS
= 10V, I
D
= 100mA
V
GS
= -10V,
V
DS
= 25V,
f = 1MHz
Supertex inc.
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
2
DN2540
Electrical Characteristics
(cont.)
Sym
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode forward voltage drop
Reverse recovery time
Min
-
-
-
-
-
-
Typ
-
-
-
-
-
800
Max
10
15
15
20
1.8
-
V
ns
ns
V
DD
= 25V,
I
D
= 150mA,
R
GEN
= 25Ω,
V
GS
= -10V, I
SD
= 120mA
V
GS
= -10V, I
SD
= 1.0A
Units
Conditions
Notes:
1. All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
V
DD
90%
10%
t
(ON)
INPUT
-10V
Pulse
Generator
t
(OFF)
t
r
t
d(OFF)
t
f
10%
90%
INPUT
R
L
OUTPUT
R
GEN
t
d(ON)
VDD
OUTPUT
0V
10%
90%
D.U.T.
Supertex inc.
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
3
DN2540
Typical Performance Curves
0.5
Output Characteristics
V
GS
= 1.0V
0.5V
250
Saturation Characteristics
V
GS
= 1.0V
0.5V
0V
0.4
200
I
D
(Amperes)
0.3
I
D
(Milliamps)
0V
150
0.2
100
-0.5V
0.1
-0.5V
50
0
-1.0V
0
80
160
240
320
400
-1.0V
0
0
1
2
V
DS
(Volts)
V
DS
(Volts)
3
4
5
0.5
Transconductance vs. Drain Current
V
DS
= 10V
20
Power Dissipation vs. Temperature
0.4
T
A
= -55
O
C
T
A
= 25
O
C
T
A
= 125
O
C
TO-220
G
FS
(Siemens)
P
D
(Watts)
0.3
10
0.2
0.1
T
A
= 25
O
C
TO-243AA
0
50
100
150
200
250
0
0
TO-92
0
25
50
75
100
125
150
I
D
(Milliamps)
T
C
( C)
O
1
Maximum Rated Safe Operating Area
T
A
= 25
O
C
1.0
Thermal Response Characteristics
TO-220 (DC)
Thermal Resistance (normalized)
TO-92/TO-220 (pulsed)
TO-243AA (DC)
0.8
TO-243AA
T
A
= 25
O
C
P
D
= 1.6W
I
D
(Amperes)
0.1
TO-92 (DC)
0.6
0.4
TO-220
T
C
= 25
O
C
P
D
= 15W
TO-92
T
C
= 25
O
C
P
D
= 1.0W
0.01
0.1
1.0
10
0.01
0.2
0.001
T
C
= 25
O
C
1
10
100
1000
0
V
DS
(Volts)
0.001
t
p
(seconds)
Supertex inc.
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
4
DN2540
Typical Performance Curves
(cont.)
1.1
BV
DSS
Variation with Temperature
V
GS
= -5.0V
100
On-Resistance vs. Drain Current
V
GS
= 0V
1.05
80
BV
DSS
(normalized)
1.0
R
DS(ON)
(Ohms)
0
100
150
60
0.95
40
0.9
20
-50
50
0
0
80
160
240
320
400
T
j
(
O
C)
I
D
(milliamps)
0.40
Transfer Characteristics
V
DS
= 10V
T
A
= -55
O
C
2.5
V
GS(OFF)
and R
DS(ON)
Variation with Temperature
0.32
T
A
= 25
O
C
2
R
DS(ON)
@ I
D
= 120mA
I
D
(Amperes)
Normalized
0.24
T
A
= 125
O
C
1.5
0.16
1
V
GS(OFF)
@ 10µA
0.08
0.5
0
-3
-2
-1
V
GS
(Volts)
0
1
2
0
-50
0
50
100
150
T
j
( C)
O
200
Capacitance Vs. Drain-to-Source Voltage
C
ISS
Gate Drive Dynamic Characteristics
15
V
GS
= 10V
150
10
C (Picofarads)
100
V
GS
(Volts)
5
V
DS
= 20V
200pF
V
DS
= 40V
C
OSS
50
0
0
C
RSS
10
-5
20
30
40
170pF
0
0.4
0.8
1.2
1.6
2.0
0
V
DS
(Volts)
Q
C
(Nanocoulombs)
Supertex inc.
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
5
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