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CMS11(TE12L,Q)

Description
Schottky (diode and rectifier) ​​40v 2A
CategoryDiscrete semiconductor    diode   
File Size173KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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CMS11(TE12L,Q) Overview

Schottky (diode and rectifier) ​​40v 2A

CMS11(TE12L,Q) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerToshiba Semiconductor
package instructionR-PDSO-F2
Contacts2
Manufacturer packaging code3-4E1A
Reach Compliance Codeunknow
ECCN codeEAR99
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.55 V
JESD-30 codeR-PDSO-F2
Maximum non-repetitive peak forward current30 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum repetitive peak reverse voltage40 V
surface mountYES
technologySCHOTTKY
Terminal formFLAT
Terminal locationDUAL
CMS11
TOSHIBA Schottky Barrier Rectifier
Schottky Barrier Type
CMS11
Switching Mode Power Supply Applications
Portable Equipment Battery Applications
Forward voltage: V
FM
= 0.55 V (max)
Average forward current: I
F (AV)
= 2.0 A
Repetitive peak reverse voltage: V
RRM
= 40 V
Suitable for compact assembly due to small surface-mount package
“M−FLAT
TM
” (Toshiba package name)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Repetitive peak reverse voltage
Symbol
V
RRM
I
F (AV)
(Note 1)
I
F (AV)
Peak one cycle surge forward current
(non-repetitive)
Junction temperature
Storage temperature
I
FSM
T
j
T
stg
Rating
40
2.0
(Ta
=
34°C)
2.0
(Tℓ
=
119°C)
30 (50 Hz)
−40~150
−40~150
Unit
V
Average forward current
A
A
°C
°C
JEDEC
JEITA
TOSHIBA
3-4E1A
Note 1: Device mounted on a ceramic board
(board size: 50 mm
×
50 mm, soldering land: 2 mm
×
2 mm)
Weight: 0.023 g (typ.)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
V
FM (1)
Peak forward voltage
V
FM (2)
V
FM (3)
Repetitive peak reverse current
Junction capacitance
I
RRM
C
j
Test Condition
I
FM
=
0.5 A
I
FM
=
1.0 A
I
FM
=
2.0 A
V
RRM
=
5.0 V
V
RRM
=
40 V
V
R
=
10 V, f
=
1.0 MHz
Device mounted on a ceramic board
(soldering land: 2 mm
×
2 mm)
Thermal resistance
R
th (j-a)
Device mounted on a glass-epoxy
board
(soldering land: 6 mm
×
6 mm)
Min
Typ.
0.38
0.42
0.49
2.0
20.0
95
Max
0.55
500
60
°C/W
μA
pF
V
Unit
135
16
R
th (j-ℓ)
1
2006-11-13
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