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ZTX557

Description
bipolar small signal pnp high voltage
Categorysemiconductor    Discrete semiconductor   
File Size73KB,2 Pages
ManufacturerAll Sensors
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ZTX557 Overview

bipolar small signal pnp high voltage

ZTX557 Parametric

Parameter NameAttribute value
MakerAll Sensors
Product Categorybipolar small signal
RoHStransition period
ConfigurationSingle
Transistor polarityPNP
Installation styleThrough Hole
Package/boxTO-92
Collector-emitter maximum voltage VCEO300 V
Emitter-Base voltage VEBO- 5 V
Collector continuous current- 0.5 A
Maximum DC collector current0.5 A
Power dissipation1 W
Maximum operating frequency75 MHz (Min)
Maximum operating temperature+ 200 C
EncapsulationBulk
Minimum operating temperature- 55 C
PNP SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTORS
ISSUE 1 – JULY 94
FEATURES
* 300 Volt V
CEO
* 0.5 Amp continuous current
* P
tot
= 1 Watt
ZTX556
ZTX557
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation
Operating and Storage Temperature
Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
ZTX556
-200
-200
-5
-1
-0.5
1.0
E-Line
TO92 Compatible
ZTX557
-300
-300
UNIT
V
V
V
A
A
W
°C
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
50
50
75
ZTX556
ZTX557
UNIT
CONDITIONS.
I
C
=-100
µ
A
I
C
=-10mA*
I
E
=-100
µ
A
V
CB
=-160V
V
CB
=-200V
V
EB
=-4V
I
C
=-50mA, I
B
=-5mA*
I
C
=-50mA, I
B
=-5mA*
IC=-50mA, V
CE
=-10V*
I
C
=-10mA, V
CE
=-10V*
I
C
=-50mA, V
CE
=-10V*
MHz
I
C
=-50mA, V
CE
=-10V
f=100MHz
MIN.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-on Voltage
Static Forward
Current Transfer
Ratio
Transition
Frequency
-200
-200
-5
-0.1
-0.1
-0.3
-1
-1
300
50
50
75
MAX
MIN.
-300
-300
-5
-0.1
-0.1
-0.3
-1
-1
300
MAX
V
V
V
µ
A
µ
A
µ
A
V
V
V
3-200

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Description bipolar small signal pnp high voltage bipolar small signal pnp high voltage bipolar small signal pnp high voltage bipolar small signal pnp high voltage
Maker All Sensors All Sensors All Sensors All Sensors
Product Category bipolar small signal bipolar small signal bipolar small signal bipolar small signal
RoHS transition period yes yes yes
Configuration Single Single Single Single
Transistor polarity PNP PNP PNP PNP
Installation style Through Hole Through Hole Through Hole Through Hole
Package/box TO-92 TO-92 TO-92 TO-92
Collector-emitter maximum voltage VCEO 300 V 300 V 300 V 300 V
Emitter-Base voltage VEBO - 5 V - 5 V - 5 V - 5 V
Collector continuous current - 0.5 A - 0.5 A - 0.5 A - 0.5 A
Maximum DC collector current 0.5 A 0.5 A 0.5 A 0.5 A
Power dissipation 1 W 1 W 1 W 1 W
Maximum operating frequency 75 MHz (Min) 75 MHz (Min) 75 MHz (Min) 75 MHz (Min)
Maximum operating temperature + 200 C + 200 C + 200 C + 200 C
Encapsulation Bulk Bulk Bulk Bulk
Minimum operating temperature - 55 C - 55 C - 55 C - 55 C
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