Philips Semiconductors
Product specification
TrenchMOS transistor
Standard level FET
GENERAL DESCRIPTION
N-channel enhancement mode
standard level field-effect power
transistor in a plastic envelope
available in TO220AB and SOT404 .
Using ’trench’ technology which
features
very
low
on-state
resistance. It is intended for use in
automotive and general purpose
switching applications.
BUK7528-55A
BUK7628-55A
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
P
tot
T
j
R
DS(ON)
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
V
GS
= 10 V
MAX.
55
41
99
175
28
UNIT
V
A
W
˚C
mΩ
PINNING
TO220AB & SOT404
PIN
1
2
3
DESCRIPTION
gate
drain
2
mb
tab
PIN CONFIGURATION
SYMBOL
d
g
3
SOT404
BUK7628-55A
source
1
tab/mb drain
1 2 3
TO220AB
BUK7528-55A
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
±V
GS
I
D
I
D
I
DM
P
tot
T
stg
, T
j
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
CONDITIONS
-
R
GS
= 20 kΩ
-
T
mb
= 25 ˚C
T
mb
= 100 ˚C
T
mb
= 25 ˚C
T
mb
= 25 ˚C
-
MIN.
-
-
-
-
-
-
-
- 55
MAX.
55
55
20
42
30
168
99
175
UNIT
V
V
V
A
A
A
W
˚C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
R
th j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient(TO220AB)
Thermal resistance junction to
ambient(SOT404)
CONDITIONS
-
in free air
Minimum footprint, FR4
board
TYP.
-
60
50
MAX.
1.5
-
-
UNIT
K/W
K/W
K/W
June 2000
1
Rev 1.100
Philips Semiconductors
Product specification
TrenchMOS transistor
Standard level FET
STATIC CHARACTERISTICS
T
j
= 25˚C unless otherwise specified
SYMBOL
V
(BR)DSS
V
GS(TO)
I
DSS
I
GSS
R
DS(ON)
PARAMETER
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA;
T
j
= -55˚C
V
DS
= V
GS
; I
D
= 1 mA
T
j
= 175˚C
T
j
= -55˚C
V
DS
= 55 V; V
GS
= 0 V;
V
GS
=
±20
V; V
DS
= 0 V
V
GS
= 10 V; I
D
= 25 A
T
j
= 175˚C
T
j
= 175˚C
MIN.
55
50
2
1
-
-
-
-
-
-
BUK7528-55A
BUK7628-55A
TYP.
-
-
3
-
-
0.05
-
2
23.8
-
MAX.
-
-
4
-
4.4
10
500
100
28
56
UNIT
V
V
V
V
V
µA
µA
nA
mΩ
mΩ
DYNAMIC CHARACTERISTICS
T
mb
= 25˚C unless otherwise specified
SYMBOL
C
iss
C
oss
C
rss
t
d on
t
r
t
d off
t
f
L
d
L
d
L
d
L
s
PARAMETER
Input capacitance
Output capacitance
Feedback capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
Internal drain inductance
Internal source inductance
CONDITIONS
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
MIN.
-
-
-
-
-
-
-
-
-
-
-
TYP.
874
218
137
14
68
83
43
4.5
3.5
2.5
7.5
MAX.
1165
261
188
21
102
116
60
-
-
-
-
UNIT
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
nH
V
DD
= 30 V; R
load
=1.2Ω;
V
GS
= 5 V; R
G
= 10
Ω
Measured from drain lead 6 mm
from package to centre of die
Measured from contact screw on
tab to centre of die(TO220AB)
Measured from upper edge of drain
tab to centre of die(SOT404)
Measured from source lead to
source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25˚C unless otherwise specified
SYMBOL
I
DR
I
DRM
V
SD
t
rr
Q
rr
PARAMETER
Continuous reverse drain
current
Pulsed reverse drain current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
CONDITIONS
MIN.
-
I
F
= 25 A; V
GS
= 0 V
I
F
= 41 A; V
GS
= 0 V
I
F
= 20 A; -dI
F
/dt = 100 A/µs;
V
GS
= -10 V; V
R
= 30 V
-
-
-
-
-
TYP.
-
-
0.85
1.1
45
88
MAX.
41
163
1.2
-
50
96
UNIT
A
A
V
V
ns
nC
June 2000
2
Rev 1.100
Philips Semiconductors
Product specification
TrenchMOS transistor
Standard level FET
AVALANCHE LIMITING VALUE
SYMBOL
W
DSS
PARAMETER
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
I
D
= 34 A; V
DD
≤
25 V;
V
GS
= 5 V; R
GS
= 50
Ω;
T
mb
= 25 ˚C
MIN.
-
BUK7528-55A
BUK7628-55A
TYP.
-
MAX.
58
UNIT
mJ
120
110
100
90
80
70
60
50
40
30
20
10
0
PD%
Normalised Power Derating
1000
ID / A
RDS(on) = VDS/ ID
100
tp =
10us
100 us
10
D.C.
1 ms
10 ms
100 ms
1
0
20
40
60
80
100
Tmb / C
120
140
160
180
1
10
VDS / V
100
1000
Fig.1. Normalised power dissipation.
PD% = 100⋅P
D
/P
D 25 ˚C
= f(T
mb
)
Fig.3. Safe operating area. T
mb
= 25 ˚C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
120
110
100
90
80
70
60
50
40
30
20
10
0
ID%
Normalised Current Derating
10
Zth / (K/W)
D=
1
0.5
0.2
0.1
0.1
0.05
0.02
T
t
PD
tp
D=
tp
T
0
0
20
40
60
80
100
Tmb / C
120
140
160
180
0.01
0.000001
0.0001
0.01
VDS / V
1
100
10000
Fig.2. Normalised continuous drain current.
ID% = 100⋅I
D
/I
D 25 ˚C
= f(T
mb
); conditions: V
GS
≥
5 V
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
June 2000
3
Rev 1.100
Philips Semiconductors
Product specification
TrenchMOS transistor
Standard level FET
BUK7528-55A
BUK7628-55A
100
ID / A
18.0
90
16.0
12.0
80
11.5
70
60
50
40
30
20
10
0
0
2
10.5
10.0
11.0
100
9.5
9.0
8.5
8.0
VGS / V =
7.5
7.0
6.5
6.0
5.5
5.0
4.5
10
90
80
70
60
50
40
30
20
10
0
ID / A
Tj / ˚C =
175
25
0
2
4
6
VGS/V
8
10
12
4
VDS / V
6
8
Fig.5. Typical output characteristics, T
j
= 25 ˚C.
I
D
= f(V
DS
); parameter V
GS
RDS(ON) / mOhm
6.0
VGS / V =
6.5
7.0
8.0
Fig.8. Typical transfer characteristics.
I
D
= f(V
GS
) ; conditions: V
DS
= 25 V; parameter T
j
70
65
60
55
50
45
40
35
30
25
20
16
14
12
10
8
6
9.0
10.0
gfs / S
4
2
0
0
10
20
30
40
50
ID / A
60
70
80
90
0
10
20
30
40
ID / A
50
60
70
80
Fig.6. Typical on-state resistance, T
j
= 25 ˚C.
R
DS(ON)
= f(I
D
); parameter V
GS
Fig.9. Typical transconductance, T
j
= 25 ˚C.
g
fs
= f(I
D
); conditions: V
DS
= 25 V
Rds(on) normlised to 25degC
55
50
45
40
35
30
25
20
15
10
RDS(ON) / mOhm
2.5
2
1.5
1
6
8
10
12
14
VGS / V
16
18
20
0.5
-100
-50
0
50
Tmb / degC
100
150
200
Fig.7. Typical on-state resistance, T
j
= 25 ˚C.
R
DS(ON)
= f(V
GS
); conditions I
D
= 25 A;
Fig.10. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 ˚C
= f(T
j
); I
D
= 25 A; V
GS
= 5 V
June 2000
4
Rev 1.100
Philips Semiconductors
Product specification
TrenchMOS transistor
Standard level FET
BUK7528-55A
BUK7628-55A
5
VGS(TO) / V
max.
BUK759-60
12
10
VGS / V
4
typ.
3
VDS= 14V
8
VDS= 44V
6
min.
2
4
2
0
1
0
-100
-50
0
50
Tj / C
100
150
200
0
5
10
15
QG / nC
20
25
30
Fig.11. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
Sub-Threshold Conduction
Fig.14. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); conditions: I
D
= 50 A; parameter V
DS
1E-01
120
100
80
IF / A
1E-02
2%
typ
98%
1E-03
Tj / ˚C =
175
25
60
1E-04
40
20
0
1E-05
1E-06
0
1
2
3
4
5
0.0
0.5
VSDS / V
1.0
1.5
Fig.12. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 ˚C; V
DS
= V
GS
Fig.15. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
WDSS%
120
Thousands / pF
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.01
0.1
Crss
Coss
Ciss
110
100
90
80
70
60
50
40
30
20
10
0
20
40
60
80
100
120
Tmb / C
140
160
180
1
VDS/V
10
100
Fig.13. Typical capacitances, C
iss
, C
oss
, C
rss
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
Fig.16. Normalised avalanche energy rating.
W
DSS
% = f(T
mb
); conditions: I
D
= 75 A
June 2000
5
Rev 1.100
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