IXTD10N100 datasheet, PDF - EEWORLD Datasheet

IXTD10N100: DescriptionPower Field-Effect Transistor, 10A I(D), 1000V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE; CategoryDiscrete semiconductor The transistor; File Size296KB，6 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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IXTD10N100 Overview

Power Field-Effect Transistor, 10A I(D), 1000V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE

Parameter Name	Attribute value
Maker	Microsemi
Parts packaging code	DIE
package instruction	UNCASED CHIP, X-XUUC-N
Reach Compliance Code	unknown
Configuration	SINGLE
Minimum drain-source breakdown voltage	1000 V
Maximum drain current (ID)	10 A
Maximum drain-source on-resistance	1.3 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	X-XUUC-N
JESD-609 code	e0
Number of components	1
Operating mode	ENHANCEMENT MODE
Package body material	UNSPECIFIED
Package shape	UNSPECIFIED
Package form	UNCASED CHIP
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	NO LEAD
Terminal location	UPPER
Transistor component materials	SILICON
Base Number Matches	1

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