SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – JANUARY 1996
PARTMARKING DETAIL
7
– SA
BSS123
S
D
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate-Source Voltage
Peak Gate-Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
DS
V
DGR
I
D
I
DM
V
GS
V
GSM
P
tot
T
j
:T
stg
MIN.
VALUE
100
100
170
680
±
20
±
20
360
-55 to +150
SOT23
UNIT
V
V
mA
mA
V
V
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source
Breakdown Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage
Drain Current
Static Drain-Source
On-State Resistance (1)
Forward
Transconductance(1)(2)
Input Capacitance (2)
Common Source
Output Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
SYMBOL MIN.
BV
DSS
100
V
GS(th)
I
GSS
I
DSS
0.8
MAX. UNIT CONDITIONS.
V
I
D
=0.25mA, V
GS
=0V
2.8
50
15
60
10
6
V
nA
µA
µA
nA
Ω
mS
20
9
4
10
10
15
25
pF
pF
pF
ns
ns
ns
ns
I
D
=1mA, V
DS
= V
GS
V
GS
=± 20V, V
DS
=0V
V
DS
=100V, V
GS
=0V
V
DS
=100V, V
GS
=0V, T=125°C
(2)
V
DS
=20V, V
GS
=0V
V
GS
=10V, I
D
=100mA
V
DS
=25V, I
D
=100mA
2.2
10
1
2
5
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
80
120
V
DS
=25V, V
GS
=0V, f=1MHz
V
DD
≈30V,
I
D
=280mA
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
≤2%
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
For typical characteristics graphs see ZVN3310F datasheet.
3 - 70
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