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SI4837DY-E3

Description
mosfet power 30v 8.3A 2.5W
CategoryDiscrete semiconductor    The transistor   
File Size81KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
Download Datasheet Parametric View All

SI4837DY-E3 Overview

mosfet power 30v 8.3A 2.5W

SI4837DY-E3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerVishay
package instruction,
Reach Compliance Codecompli
ConfigurationSingle
Maximum drain current (Abs) (ID)6.1 A
Maximum drain current (ID)6.1 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee3
Humidity sensitivity level1
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)2.5 W
surface mountYES
Terminal surfaceMatte Tin (Sn)
Si4837DY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
V
DS
(V)
- 30
FEATURES
I
D
(A)
8.3
6.8
r
DS(on)
(W)
0.020 @ V
GS
= - 10 V
0.030 @ V
GS
= - 4.5 V
D
TrenchFETr Power MOSFET
D
LITTLE FOOTr
Plus
Schottky
D
100% R
g
Tested
APPLICATIONS
D
Battery Charging
D
DC/DC Converters
- Asynchronous Buck
- Voltage Inverter
SCHOTTKY PRODUCT SUMMARY
V
KA
(V)
30
V
f
(V)
Diode Forward Voltage
0.53 V @ 3 A
I
F
(A)
3
S
K
SO-8
K
S
S
G
1
2
3
4
Top View
Ordering Information: Si4837DY
Si4837DY-T1 (with Tape and Reel)
8
7
6
5
A
D
D
D
G
D
P-Channel MOSFET
A
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current (T
J
= 150_C) (MOSFET)
a, b
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)
a, b
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
Maximum Power Dissipation (MOSFET)
a, b
Maximum Power Dissipation
(Schottky)
a, b
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
T
J
, T
stg
P
D
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
KA
V
GS
I
D
I
DM
I
S
I
F
I
FM
10 Sec
- 30
30
"20
- 8.3
- 6.6
- 40
- 2.3
3
20
2.5
1.6
1.5
0.98
Steady State
Unit
V
- 6.1
- 4.9
- 1.25
A
1.38
0.88
1.0
0.64
- 55 to 150
_C
W
Operating Junction and Storage Temperature Range
Notes
a. Surface Mounted on FR4 Board.
b. t
v
10 sec.
Document Number: 71662
S-31726—Rev. B, 18-Aug-03
www.vishay.com
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