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VSSB410-E3/52T

Description
Schottky (diode and rectifier) ​​4a100voltstmbs
Categorysemiconductor    Discrete semiconductor   
File Size82KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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VSSB410-E3/52T Overview

Schottky (diode and rectifier) ​​4a100voltstmbs

VSSB410-E3/52T Parametric

Parameter NameAttribute value
MakerVishay
Product CategorySchottky (diodes and rectifiers)
RoHSyes
EncapsulationReel
New Product
VSSB410S
Vishay General Semiconductor
Surface Mount Trench MOS Barrier Schottky Rectifier
FEATURES
• Low profile package
TMBS
®
• Ideal for automated placement
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS directive 2002/95/EC
accordance to WEEE 2002/96/EC
and
in
DO-214AA (SMB)
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
E
AS
V
F
at I
F
= 4.0 A
T
J
max.
4.0 A
100 V
80 A
50 mJ
0.61 V
150 °C
For use in low voltage, high frequency inverters,
freewheeling, dc-to-dc converters, and polarity protection
applications.
MECHANICAL DATA
Case:
DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
Color band denotes the cathode end
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum DC forward current
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Non-repetitive avalanche energy
at T
J
= 25 °C, L = 60 mH
Peak repetitive reverse current at t
p
= 2 µs, 1 kHz,
T
J
= 38 °C ± 2 °C
Operating junction and storage temperature range
Notes
(1)
Mounted on 14 mm x 14 mm pad areas, 1 oz. FR4 P.C.B.
(2)
Free air, mounted on recommended copper pad area
V
RRM
I
F (1)
I
F (2)
I
FSM
E
AS
I
RRM
T
J
, T
STG
SYMBOL
VSSB410S
V4B
100
4.0
A
1.9
80
50
1.0
- 40 to + 150
A
mJ
A
°C
V
UNIT
Document Number: 89140
Revision: 25-Aug-09
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1

VSSB410-E3/52T Related Products

VSSB410-E3/52T VSSB410S-E3/5AT
Description Schottky (diode and rectifier) ​​4a100voltstmbs Schottky (diode and rectifier) ​​4A, 100v, tmbs
Maker Vishay Vishay
RoHS yes yes
Encapsulation Reel Reel

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