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VN1206L

Description
mosfet small signal 120v 6ohm
CategoryDiscrete semiconductor    The transistor   
File Size338KB,3 Pages
ManufacturerSupertex
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VN1206L Overview

mosfet small signal 120v 6ohm

VN1206L Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSupertex
package instructionCYLINDRICAL, O-PBCY-W3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH INPUT IMPEDANCE
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage120 V
Maximum drain current (Abs) (ID)0.23 A
Maximum drain current (ID)0.23 A
Maximum drain-source on-resistance6 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)20 pF
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
VN1206
N-Channel Enhancement-Mode
Vertical DMOS FET
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
General Description
This enhancement-mode (normally-off) transistor utilizes
a vertical DMOS structure and Supertex’s well-proven,
silicon-gate manufacturing process. This combination
produces a device with the power handling capabilities
of bipolar transistors and the high input impedance and
positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Applications
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Ordering Information
Device
VN1206
Package Option
TO-92
VN1206L-G
BV
DSS
/BV
DGS
(V)
R
DS(ON)
(max)
(Ω)
I
D(ON)
(min)
(A)
120
6.0
1.0
-G indicates package is RoHS compliant (‘Green’)
Pin Configuration
DRAIN
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
Value
BV
DSS
BV
DGS
±30V
-55
O
C to +150
O
C
300
O
C
SOURCE
GATE
TO-92 (L)
Product Marking
YYWW
Si VN
1206L
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*
Distance of 1.6mm from case for 10 seconds.
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
TO-92 (L)
Package may or may not include the following marks: Si or
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com

VN1206L Related Products

VN1206L VN1206L-P013-G VN1206L-P003 VN1206L-P002 VN1206L-P002-G VN1206L-P014 VN1206L-P013 VN1206L-P003-G VN1206L-P014-G
Description mosfet small signal 120v 6ohm mosfet small signal 120v 6ohm mosfet small signal 120v 6ohm mosfet small signal 120v 6ohm mosfet small signal 120v 6ohm mosfet small signal 120v 6ohm mosfet small signal 120v 6ohm mosfet small signal 120v 6ohm mosfet small signal 120v 6ohm
Maker Supertex Supertex Supertex Supertex Supertex Supertex Supertex Supertex Supertex
Configuration SINGLE WITH BUILT-IN DIODE Single Single Single Single Single Single Single Single
Maximum operating temperature 150 °C + 150 C + 150 C + 150 C + 150 C + 150 C + 150 C + 150 C + 150 C
Product Category - MOSFET small signal MOSFET small signal MOSFET small signal MOSFET small signal MOSFET small signal MOSFET small signal MOSFET small signal MOSFET small signal
RoHS - yes no no yes no no yes yes
Transistor polarity - N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Resistor drain/source RDS (on) - 6 Ohms 6 Ohms 6 Ohms 6 Ohms 6 Ohms 6 Ohms 6 Ohms 6 Ohms
Drain/source breakdown voltage - 120 V 120 V 120 V 120 V 120 V 120 V 120 V 120 V
Gate/source breakdown voltage - +/- 30 V +/- 30 V +/- 30 V +/- 30 V +/- 30 V +/- 30 V +/- 30 V +/- 30 V
Drain continuous current - 0.23 A 0.23 A 0.23 A 0.23 A 0.23 A 0.23 A 0.23 A 0.23 A
Power dissipation - 1 W 1 W 1 W 1 W 1 W 1 W 1 W 1 W
Installation style - Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package/box - TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
Minimum operating temperature - - 55 C - 55 C - 55 C - 55 C - 55 C - 55 C - 55 C - 55 C
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