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BZT55B4V3-B0L1G

Description
Zener Diode
CategoryDiscrete semiconductor    diode   
File Size182KB,6 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

BZT55B4V3-B0L1G Overview

Zener Diode

BZT55B4V3-B0L1G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
Reach Compliance Codecompliant
ECCN codeEAR99
Diode typeZENER DIODE
JESD-609 codee3
Humidity sensitivity level1
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Terminal surfaceMatte Tin (Sn) - with Nickel (Ni) barrier
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
BZT55B2V4 ~ BZT55B75
Taiwan Semiconductor
Small Signal Product
500mW , 2% Tolerance SMD Zener Diode
FEATURES
- Wide zener voltage range selection: 2.4V to 75V
- VZ Tolerance Selection of ±2%
- Moisture sensitivity level 1
- Matte Tin(Sn) lead finish with Nickel(Ni) underplate
- Pb free and RoHS compliant
- All external surfaces are corrosion resistant and
leads are readily solderable
QUADRO Mini-MELF (LS34)
Hermetically Sealed Glass
MECHANICAL DATA
- Case: QUADRO Mini-MELF Package (JEDEC DO-213)
- High temperature soldering guaranteed: 270
o
C/10s
- Polarity: Indicated by cathode band
- Weight: 29 ± 2.5mg
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Power Dissipation
Forward Voltage
Thermal Resistance (Junction to Ambient)
Junction and Storage Temperature Range
Note1: Valid provided that electrodes are kept at ambient temperature
I
F
= 10 mA
(Note 1)
SYMBOL
P
D
V
F
R
θJA
T
J
, T
STG
VALUE
500
1
500
- 65 to + 175
UNIT
mW
V
o
C/W
o
C
Zener I vs. V Characteristics
V
BR
I
ZK
Z
ZK
I
ZT
V
Z
Z
ZT
I
ZM
V
ZM
: Voltage at I
ZK
: Test current for voltage V
BR
: Dynamic impedance at I
ZK
: Test current for voltage V
Z
: Voltage at current I
: Dynamic impedance at I
ZT
: Maximum steady state current
: Voltage at I
ZM
Document Number: DS_S1405002
Version: G14
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