New Product
SB1H90 & SB1H100
Vishay General Semiconductor
High-Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
• High barrier technology for improved high T
J
• Guardring for overvoltage protection
• Low power losses and high efficiency
• Low forward voltage drop
• Very low leakage current
• High forward surge capability
DO-204AL (DO-41)
• High frequency operation
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in middle voltage high frequency inverters,
freewheeling, dc-to-dc converters and polarity
protection applications.
1.0 A
90 V, 100 V
50 A
0.62 V
1.0 µA
175 °C
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
I
R
T
J
max.
MECHANICAL DATA
Case:
DO-204AL (DO-41)
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity:
Color band denotes the cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Voltage rate of change (rated V
R
)
Peak repetitive reverse surge current at t
p
= 2.0 µs, 1 kHz
Maximum operating junction temperature
Storage temperature range
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
dV/dt
I
RRM
T
J
T
STG
SB1H90
90
63
90
1.0
50
10 000
1.0
175
- 55 to + 175
SB1H100
100
70
100
UNIT
V
V
V
A
A
V/µs
A
°C
°C
Document Number: 88716
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
New Product
SB1H90 & SB1H100
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
I
F
= 1.0 A
I
F
= 1.0 A
I
F
= 2.0 A
I
F
= 2.0 A
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
SYMBOL
SB1H90
0.77
0.62
0.86
0.70
1.0
0.5
SB1H100
UNIT
Maximum instantaneous forward voltage
(1)
V
F
V
Maximum reverse current at rated V
R (2)
Notes:
(1) Pulse test: 300 ms pulse width, 1 % duty cycle
(2) Pulse test: Pulse width
≤
40 ms
I
R
µA
mA
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum thermal resistance
(1)
Note:
(1) P.C.B. mounted with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas
SYMBOL
R
θJA
R
θJL
SB1H90
57
15
SB1H100
UNIT
°C/W
ORDERING INFORMATION
(Example)
PREFERRED P/N
SB1H100-E3/54
SB1H100-E3/73
SB1H100HE3/54
(1)
SB1H100HE3/73
(1)
Note:
(1) Automotive grade AEC Q101 qualified
UNIT WEIGHT (g)
0.34
0.34
0.34
0.34
PREFERRED PACKAGE CODE
54
73
54
73
BASE QUANTITY
5500
3000
5500
3000
DELIVERY MODE
13" diameter paper tape and reel
Ammo pack packaging
13" diameter paper tape and reel
Ammo pack packaging
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
1.2
100
Instantaneous Forward Current (A)
Average Forward Current (A)
1.0
T
J
= 175 °C
10
T
J
= 150 °C
0.8
0.6
1
T
J
= 125 °C
0.4
0.1
T
J
= 100 °C
0.2
T
J
= 25 °C
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
0
25
50
75
100
125
150
175
200
Case Temperature (°C)
Instantaneous Forward
Voltage
(V)
Figure 1. Forward Current Derating Curve
Figure 2. Typical Instantaneous Forward Characteristics
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For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88716
Revision: 19-May-08
New Product
SB1H90 & SB1H100
Vishay General Semiconductor
10 000
100
1000
T
J
= 150 °C
T
J
= 125 °C
10
T
J
= 100 °C
1
Transient Thermal Impedance (°C/W)
80
100
Instantaneous Reverse Current (µA)
100
10
1
0.1
T
J
= 25 °C
0.01
20
40
60
0.1
0.01
0.1
1
10
Percent of Rated Peak Reverse
Voltage
(%)
t - Pulse Duration (s)
Figure 3. Typical Reverse Characteristics
Figure 5. Typical Transient Thermal Impedance
10 000
Junction Capacitance (pF)
1000
100
10
0.1
1
10
100
Reverse
Voltage
(V)
Figure 4. Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-204AL (DO-41)
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160 (4.1)
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
Document Number: 88716
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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