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SUB85N03-07P-E3

Description
mosfet power 30v 85a 107w
CategoryDiscrete semiconductor    The transistor   
File Size90KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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SUB85N03-07P-E3 Overview

mosfet power 30v 85a 107w

SUB85N03-07P-E3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerVishay
package instruction,
Reach Compliance Codeunknow
ConfigurationSingle
Maximum drain current (Abs) (ID)85 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee3
Humidity sensitivity level1
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)107 W
surface mountYES
Terminal surfaceMatte Tin (Sn) - with Nickel (Ni) barrie
SUP/SUB85N03-07P
New Product
Vishay Siliconix
N-Channel 30-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
30
r
DS(on)
(W)
0.007 @ V
GS
= 10 V
0.01 @ V
GS
= 4.5 V
I
D
(A)
a
85
a
75
TO-220AB
D
TO-263
G
DRAIN connected to TAB
G
G D S
Top View
SUP85N03-07P
D S
S
N-Channel MOSFET
Top View
SUB85N03-07P
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
175 C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
b
Maximum Power Dissipation
b
L = 0.1 mH
T
C
= 25_C (TO-220AB and TO-263)
T
A
= 25_C (TO-263)
d
T
C
= 25_C
T
C
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
30
"20
85
a
64
240
75
280
107
c
3.75
–55 to 175
Unit
V
A
mJ
W
_C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount (TO-263)
d
Junction-to-Ambient
Free Air (TO-220AB)
Junction-to-Case
Notes
a. Package limited.
b. Duty cycle
v
1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 71147
S-00757—Rev. B, 10-Apr-00
www.vishay.com
S
FaxBack 408-970-5600
R
thJA
R
thJC
Symbol
Limit
40
62.5
1.4
Unit
_C/W
2-1

SUB85N03-07P-E3 Related Products

SUB85N03-07P-E3 SUP85N03-07P-E3
Description mosfet power 30v 85a 107w Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Is it Rohs certified? conform to conform to
Reach Compliance Code unknow unknown
Configuration Single Single
Maximum drain current (Abs) (ID) 85 A 85 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 107 W 107 W
surface mount YES NO
Terminal surface Matte Tin (Sn) - with Nickel (Ni) barrie Matte Tin (Sn) - with Nickel (Ni) barrier
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