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BUZ310

Description
Power Field-Effect Transistor, 2.5A I(D), 1000V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA
CategoryDiscrete semiconductor    The transistor   
File Size240KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BUZ310 Overview

Power Field-Effect Transistor, 2.5A I(D), 1000V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA

BUZ310 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInfineon
Reach Compliance Codeunknown
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage1000 V
Maximum drain current (Abs) (ID)2.5 A
Maximum drain current (ID)2.5 A
Maximum drain-source on-resistance5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-218AA
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)75 W
Maximum pulsed drain current (IDM)10 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1
BUZ 310
SIPMOS
®
Power Transistor
• N channel
• Enhancement mode
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 310
V
DS
1000 V
I
D
2.5 A
R
DS(on)
5
Package
TO-218 AA
Ordering Code
C67078-A3101-A2
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
Symbol
Values
1000
1000
Unit
V
V
DS
V
DGR
I
D
R
GS
= 20 kΩ
Continuous drain current
A
2.5
T
C
= 25 °C
Pulsed drain current
I
Dpuls
10
T
C
= 25 °C
Gate source voltage
Power dissipation
V
GS
P
tot
±
20
78
V
W
T
C
= 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
T
j
T
stg
R
thJC
R
thJA
-55 ... ...+ 150 °C
-55 ... ...+ 150
1.6
75
C
55 / 150 / 56
K/W
Semiconductor Group
1
07/96
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