• Solution for High-Side Battery Disconnect Switching
(BDS)
• Supports Battery Switching in Multiple Battery Cell
Phones, PDAs and PCS Products
• Low Profile, Small Footprint TSOP-6 Package
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
The Si3831DV is a low on-resistance p-channel power
MOSFET providing bi-directional blocking and conduction.
Bi-directional blocking is facilitated by combining a 4-terminal
symmetric p-channel MOSFET with a body bias selector
circuit
a
. Circuit operation automatically biases the p-channel
body to the most positive source/drain potential thereby
maintaining a reverse bias across the diode present between
the source/drain terminals. Off-state device blocking
characteristics are symmetric, facilitating bi-directional
blocking for high-side battery switching in portable products.
Gate drive is facilitated by negatively biasing the gate relative
to the body potential. The off-state is achieved by biasing the
gate to the most positive supply voltage or to the body
potential. The Si3831DV is available in a 6-pin TSOP-6
package rated for the - 25 °C to 85 °C commercial
temperature range.
APPLICATION CIRCUITS
AC/DC
Adapter
Charger
Body
Bias
Loads
Body
Bias
Si3831DV
DC/DC
Body
Bias
Si3831DV
Body
Bias
Si3831DV
Si3831DV
Figure 1. Charger Demultiplexing
Note:
a. Patents pending.
Charger
Figure 2. Battery Multiplexing (High-Side Switch)
Document Number: 70785
S09-2276-Rev. D, 02-Nov-09
www.vishay.com
1
Si3831DV
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
S/D
(6)
TSOP-6
Top View
BODY
Body
Bias
Generator
1
6
S/D
P-Channel MOSFET
G
(3)
ESD
Protection
3 mm
SUB
2
5
SUB
G
3
4
D/S
D/S
(4)
BODY
(1)
SUBSTRATE (GND)
(2, 5)
2.75 mm
Figure 3.
Ordering Information:
Si3831DV-T1-E3 (Lead (Pb)-free)
Si3831DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
Figure 4.
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage, Source-Drain Voltage
a
Source-Body, Drain-Body, Gate-Body Voltage
Body-Substrate Voltage
Continuous Drain-to-Source Current (T
J
= 150 °C)
a, b
Pulsed Drain-to-Source Current
a
Maximum Power Dissipation
b
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
SB
, V
DB
, V
GB
V
BSUB
I
D
I
DM
P
D
T
J
, T
stg
Limit
- 7.0 to + 7.0
0.3 to - 7.0
+ 7.0 to - 0.3
± 2.4
± 2.0
±8
1.5
1.0
- 55 to 150
W
°C
A
V
Unit
RECOMMENDED OPERATING RANGE
Parameter
Drain-Source Voltage
a
Gate-Drain, Gate-Source Voltage
Source-Body, Drain-Body, Gate-Body Voltage
Drain-to-Source Current
a, b
Body-Source Current
Symbol
V
DS
V
GD
, V
GS
V
SB
, V
DB
, V
GB
I
DS
I
BS
Range
- 5.5 to 5.5
0 to - 5.5
0 to - 5.5
± 2.4
0 to 10
A
µA
V
Unit
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b
Notes:
a. Bi-directional.
b. Surface Mounted on FR4 board, t
≤
5 s.
c. Surface Mounted on FR4 board, Steady-State.
Symbol
R
thJA
Limit
80
125
Unit
°C/W
www.vishay.com
2
Document Number: 70785
S09-2276-Rev. D, 02-Nov-09
Si3831DV
Vishay Siliconix
SPECIFICATIONS
V
BS
= 0 V, T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 3 V, R
L
= 3
Ω
I
D
≅
- 1.0 A, V
GEN
= - 4.5 V, R
g
= 6
Ω
V
DS
= - 5 V, V
GS
= - 4.5 V, I
D
= - 2.4 A
2.0
0.23
0.14
12
55
90
85
25
110
180
170
ns
4.0
nC
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= - 5.5 V to + 0.3 V
V
DS
= - 5.5 V, V
GS
= 0 V, V
SB
= 0 V
V
DS
= - 5.5 V, V
GS
= 0 V, V
SB
= 0 V, T
J
= 70 °C
V
DS
= - 3 V, V
GS
= - 4.5 V
V
DS
= - 3 V, V
GS
= - 2.5 V
V
GS
= - 4.5 V, I
D
= - 2.4 A
V
GS
= - 2.5 V, I
D
= - 2.0 A
-8
-3
0.130
0.180
0.170
0.240
- 0.4
± 100
-1
-5
V
nA
µA
A
Ω
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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