ZVN4306ASTOB datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > semiconductor> Discrete semiconductor> ZVN4306ASTOB

ZVN4306ASTOB: Descriptionmosfet small signal N-chnl 60v; Categorysemiconductor Discrete semiconductor; File Size137KB，3 Pages; ManufacturerAll Sensors; Environmental Compliance

Download Datasheet Parametric Compare View All

ZVN4306ASTOB Online Shopping

Suppliers	Part Number	Price	MOQ	In stock
	ZVN4306ASTOB	-	-	View	Buy Now

ZVN4306ASTOB Overview

mosfet small signal N-chnl 60v

ZVN4306ASTOB Parametric

Parameter Name	Attribute value
Maker	All Sensors
Product Category	MOSFET small signal
RoHS	yes
Configuration	Single
Transistor polarity	N-Channel
Resistor drain/source RDS (on)	0.45 Ohms
Drain/source breakdown voltage	60 V
Gate/source breakdown voltage	+/- 20 V
Drain continuous current	1.1 A
Power dissipation	850 mW
Maximum operating temperature	+ 150 C
Installation style	Through Hole
Package/box	TO-92
Encapsulation	Bulk
Minimum operating temperature	- 55 C

Preview

Download Datasheet

View All

N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 3 – JULY 94

FEATURES

* 60 Volt V

* R

DS(on)

= 0.33Ω

* Spice model available

APPLICATIONS

* DC-DC convertors

* Solenoids / relay drivers for automotive

ZVN4306A

E-Line

TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Drain-Source Voltage

Continuous Drain Current at T

amb

=25°C

Practical Continuous Drain Current at

amb

=25°C

Pulsed Drain Current

Gate Source Voltage

Power Dissipation at T

amb

=25°C

Practical Power Dissipation at T

amb

=25°C*

Operating and Storage Temperature Range

SYMBOL

tot

totp

stg

VALUE

1.1

1.3

850

1.13

-55 to +150

UNIT

°C

*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B.

with copper equal to 1 inch square minimum

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Drain-Source

Breakdown Voltage

Gate-Source

Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage

Drain Current

On-State Drain

Current(1)

Static Drain-Source

On-State Resistance

(1)

Forward

Transconductance

(1)(2)

SYMBOL MIN.

DSS

GS(th)

GSS

DSS

D(on)

DS(on)

0.22

0.32

700

0.33

0.45

1.3

100

TYP.

MAX. UNIT CONDITIONS.

µA

Ω

=1mA, V

=0V

ID=1mA, V

= V

=± 20V, V

=0V

=60V, V

=48V, V

=0V, T=125°C

(2)

=10V, V

=10V

=10V,I

=3A

=5V, I

=1.5A

=25V,I

=3A

3-390

ZVN4306ASTOB Related Products

	ZVN4306ASTOB	ZVN4306ASTZ
Description	mosfet small signal N-chnl 60v	mosfet small signal N-chnl 60v
Maker	All Sensors	All Sensors
Product Category	MOSFET small signal	MOSFET small signal
RoHS	yes	yes
Configuration	Single	Single
Transistor polarity	N-Channel	N-Channel
Resistor drain/source RDS (on)	0.45 Ohms	0.45 Ohms
Drain/source breakdown voltage	60 V	60 V
Gate/source breakdown voltage	+/- 20 V	+/- 20 V
Drain continuous current	1.1 A	1.1 A
Power dissipation	850 mW	850 mW
Maximum operating temperature	+ 150 C	+ 150 C
Installation style	Through Hole	Through Hole
Package/box	TO-92	TO-92
Encapsulation	Bulk	Bulk
Minimum operating temperature	- 55 C	- 55 C

Recommended Resources

Pulse boost circuitb

Staircase wave signal generation circuit using LM3900

Dual power supply small power DC voltage stabilizing circuit without power transformer

Franklin push-pull reactive voltage controlled oscillator circuit diagram

Corridor automatic light-off device

NICAD Battery Zapper

Moderator, how can I observe whether a variable changes in the Ride7 environment?: I am using Ride7 released by Raisonance. I want to determine whether the program has entered an interrupt, so I want to put a variable in the interrupt to increment itself, and then observe whether th...; spy183 stm32/stm8

What is this thing called a smart battery system?: [p=28, 2, left][color=rgb(51, 51, 51)][font=宋体]Many new technologies increase system power consumption while improving performance. For chemical companies that produce batteries, substantial progress ...; qwqwqw2088 Analogue and Mixed Signal

Research on LM3S8962 GPIO function library (serial): The GPIO port controls 8 independent IO pins. The actual pin number represents the high and low order of the data. Each pin has the following functions1. Can be configured as input or output. Once res...; eeleader-mcu Microcontroller MCU

USB2.0 Transactions: There are three major transactions, IN, OUT and SETUP. Each transaction consists of three stages: token packet, data packet and handshake packet. The term "stage" is used here because the sending of t...; 至芯科技FPGA大牛 FPGA/CPLD

Characteristics of voltage-type electrostatic breakdown of MOS tubes: In fact, the MOS tube is an ESD sensitive device. Its input resistance is very high, and the gate-source capacitance is very small. Therefore, it is very easy to be charged by the induction of externa...; fish001 Analogue and Mixed Signal

Beijing urgently recruits 2 senior embedded system developers: Two projects in Beijing are urgently recruiting two positions: Job content: 1) Participate in the company's embedded platform solutions and architecture, system design and development; 2) Engage in so...; s_jnwen Embedded System

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components