DC0150ADJ / DC0150BDJ
COMPLEMENTARY NPN/PNP SURFACE MOUNT TRANSISTOR
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Features
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Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Ultra Small Package
Mechanical Data
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SOT-963
NEW PRODUCT
Case: SOT-963
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish
⎯
Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 5
Ordering Information: See Page 5
Weight: 0.0027 grams (approximate)
6
5
4
Q1
Q2
1
Top View
2
3
Device Schematic
Maximum Ratings–Q1 NPN
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current – Continuous
Base Current
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
Value
60
50
5
100
30
Unit
V
V
V
mA
mA
Maximum Ratings–Q2 PNP
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Base Current
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
Value
-50
-50
-5
-100
-30
Unit
V
V
V
mA
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient (Note 3)
Operating and Storage Temperature Range
Notes:
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
300
417
-55 to +150
Unit
mW
°C/W
°C
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
DC0150ADJ / DC0150BDJ
Document number: DS31480 Rev. 3 - 2
1 of 6
www.diodes.com
April 2009
© Diodes Incorporated
DC0150ADJ / DC0150BDJ
Electrical Characteristics–Q1 NPN
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capactiance
f
T
C
ob
60
—
—
1.3
—
—
MHz
pF
V
CE
= 10V, I
E
= -1mA
f = 30MHz
V
CB
= 10V, I
E
= 0,
f = 1MHz
@T
A
= 25°C unless otherwise specified
Symbol
V(
BR)CBO
V(
BR)CEO
V(
BR)EBO
I
CBO
I
EBO
V
CE(SAT)
Min
60
50
5
—
—
—
120
200
Typ
—
—
—
—
—
0.10
—
—
Max
—
—
—
0.1
0.1
0.25
240
400
Unit
V
V
V
μA
μA
V
—
Test Condition
I
C
= 10μA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10μA, I
C
= 0
V
CB
= 60V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 100mA, I
B
= 10mA
V
CE
= 6V, I
C
= 2mA
NEW PRODUCT
DC0150ADJ
DC0150BDJ
h
FE
Electrical Characteristics–Q2 PNP
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capactiance
Notes:
@T
A
= 25°C unless otherwise specified
Symbol
V(
BR)CBO
V(
BR)CEO
V(
BR)EBO
I
CBO
I
EBO
V
CE(SAT)
Min
-50
-50
-5
—
—
—
120
200
80
—
Typ
—
—
—
—
—
-0.15
—
—
—
1.6
Max
—
—
—
-0.1
-0.1
-0.3
240
400
—
—
Unit
V
V
V
μA
μA
V
—
Test Condition
I
C
= -10μA, I
E
= 0
I
C
= -1mA, I
B
= 0
I
E
= -10μA, I
C
= 0
V
CB
= -50V, I
E
= 0
V
EB
= -5V, I
C
= 0
I
C
= -100mA, I
B
= -10mA
V
CE
= -6V, I
C
= -2mA
V
CE
= -10V, I
E
= 1mA
f = 30MHz
V
CB
= -10V, I
E
= 0,
f = 1MHz
DC0150ADJ
DC0150BDJ
h
FE
f
T
C
ob
MHz
pF
4. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle
≤2%
300
250
1,000
-I
C
, COLLECTOR CURRENT (mA)
P
D
, POWER DISSIPATION (W)
200
100
Pw = 10ms
150
Pw = 100ms
DC
100
10
50
R
θJA
= 417°C/W
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (
°
C)
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)
0
1
0.1
1
10
100
-V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage (Note 3)
DC0150ADJ / DC0150BDJ
Document number: DS31480 Rev. 3 - 2
2 of 6
www.diodes.com
April 2009
© Diodes Incorporated
DC0150ADJ / DC0150BDJ
1,000
T
A
= 150°C
T
A
= 85°C
V
CE
= 6V
1
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
I
C
/I
B
= 10
h
FE
, DC CURRENT GAIN
T
A
= 25°C
T
A
= -55°C
NEW PRODUCT
100
0.1
T
A
= 150°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
10
0.1
1
10
100
1,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain
vs. Collector Current (DC0150BDJ-NPN)
V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
0.01
0.0001
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current (DC0150BDJ-NPN)
V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
1.2
I
C
/I
B
= 10
1.2
V
CE
= 6V
1.0
1.0
0.8
T
A
= -55°C
0.8
T
A
= -55°C
0.6
T
A
= 25°C
0.6
0.4
T
A
= 85°C
T
A
= 25°C
0.2
T
A
= 150°C
0.4
T
A
= 85°C
0
0.0001
T
A
= 150°C
0.001
0.01
0.1
I
C
, COLLECTOR CURRENT (A)
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current (DC0150BDJ-NPN)
f = 1MHz
1
0.2
0.0001
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current (DC0150BDJ - NPN)
100
320
f
T
, GAIN-BANDWIDTH PRODUCT (MHz)
280
240
200
160
120
80
40
0
1
10
100
V
R
, REVERSE VOLTAGE (V)
Fig. 7 Typical Capacitance Characteristics
(DC0150BDJ - NPN)
V
CE
= 6V
f = 30MHz
CAPACITANCE (pF)
10
C
ibo
1
C
obo
0
0.1
0
2
4
6
8
I
C
, COLLECTOR CURRENT (mA)
Fig. 8 Typical Gain-Bandwidth Product
vs. Collector Current (DC0150BDJ - NPN)
10
DC0150ADJ / DC0150BDJ
Document number: DS31480 Rev. 3 - 2
3 of 6
www.diodes.com
April 2009
© Diodes Incorporated
DC0150ADJ / DC0150BDJ
1,000
-V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
T
A
= 150°C
T
A
= 85°C
T
A
= 25°C
1
I
C
/I
B
= 10
h
FE
, DC CURRENT GAIN
NEW PRODUCT
T
A
= -55°C
T
A
= 150°C
100
0.1
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
V
CE
= -6V
10
0.1
1
10
100
1,000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 9 Typical DC Current Gain
vs. Collector Current (DC0510BDJ - PNP)
-V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
0.01
0.0001
0.001
0.01
0.1
1
-I
C
, COLLECTOR CURRENT (A)
Fig. 10 Typical Collector-Emitter Saturation Voltage
vs. Collector Current (DC0510BDJ - PNP)
-V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
1.2
1.2
1.0
V
CE
= -6V
1.0
I
C
/I
B
= 10
0.8
T
A
= -55°C
0.8
T
A
= -55°C
0.6
T
A
= 25°C
0.6
0.4
T
A
= 85°C
T
A
= 25°C
0.2
T
A
= 150°C
0.4
T
A
= 85°C
T
A
= 150°C
0
0.0001
0.001
0.01
0.1
1
-I
C
, COLLECTOR CURRENT (A)
Fig. 11 Typical Base-Emitter Turn-On Voltage
vs. Collector Current (DC0510BDJ - PNP)
0.2
0.0001
0.001
0.01
0.1
1
-I
C
, COLLECTOR CURRENT (A)
Fig. 12 Typical Base-Emitter Saturation Voltage
vs. Collector Current (DC0150BDJ - PNP)
100
f = 1MHz
250
f
T
, GAIN-BANDWIDTH PRODUCT (MHz)
200
CAPACITANCE (pF)
10
C
ibo
150
100
1
C
obo
50
V
CE
= -6V
f = 30MHz
0
0.1
1
10
100
V
R
, REVERSE VOLTAGE (V)
Fig. 13 Typical Capacitance Characteristics
(DC0150BDJ - PNP)
0
0
2
4
6
8
-I
C
, COLLECTOR CURRENT (mA)
Fig. 14 Typical Gain-Bandwidth Product
vs. Collector Current (DC0510BDJ - PNP)
10
DC0150ADJ / DC0150BDJ
Document number: DS31480 Rev. 3 - 2
4 of 6
www.diodes.com
April 2009
© Diodes Incorporated
DC0150ADJ / DC0150BDJ
Ordering Information
Device
DC0150ADJ-7
DC0150BDJ-7
Notes:
5.
(Note 5)
Packaging
SOT-963
SOT-963
Shipping
10,000/Tape & Reel
10,000/Tape & Reel
For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
NEW PRODUCT
Marking Information
xx
xx= Product Type Marking Code:
T1 = DC0150ADJ
T2 = DC0150BDJ
Package Outline Dimensions
D
e1
L
E1
E
e
b (5 places)
c
A
A1
SOT-963
Dim Min
Max Typ
A
0.40
0.50 0.45
A1
0
0.05
-
c
0.077 0.177 0.127
D
0.95
1.05 1.00
E
0.95
1.05 1.00
E1
0.75
0.85 0.80
L
0.05
0.15 0.10
b
0.10
0.20 0.15
e
0.35 Typ
e1
0.70 Typ
All Dimensions in mm
DC0150ADJ / DC0150BDJ
Document number: DS31480 Rev. 3 - 2
5 of 6
www.diodes.com
April 2009
© Diodes Incorporated
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