SS2H9 & SS2H10
Vishay General Semiconductor
High-Voltage Surface Mount Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
• Low profile package
• Guardring for overvoltage protection
• Ideal for automated placement
• Low power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High surge capability
DO-214AA (SMB)
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Solder dip 260 °C 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, dc-to-dc converters, and polarity
protection applications.
MECHANICAL DATA
Case:
DO-214AA (SMB)
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity:
Color band denotes the cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
I
R
T
J
max.
2.0 A
90 V, 100 V
75 A
0.65 V
10 µA
175 °C
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at: T
L
= 130 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Peak repetitive reverse surge current at t
p
= 2.0 µs, 1 kHz
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
V
RRM
V
RWM
V
DC
I
F(AV)
I
FSM
I
RRM
dV/dt
T
J
, T
STG
SYMBOL
SS2H9
MS9
90
90
90
2.0
75
1.0
10 000
- 65 to + 175
SS2H10
MS10
100
100
100
V
V
V
A
A
A
V/µs
°C
UNIT
Document Number: 88750
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
SS2H9 & SS2H10
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward
voltage
(1)
Maximum reverse current
at rated V
R (2)
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width
≤
40 ms
TEST CONDITIONS
I
F
= 2.0 A
I
F
= 2.0 A
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
SYMBOL
V
F
I
R
SS2H9
0.79
0.65
10
4
SS2H10
UNIT
V
µA
mA
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum thermal resistance junction to lead T
L
= 25 °C
(1)
Note:
(1) Units mounted on P.C.B. with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas
SYMBOL
R
θJA
R
θJL
SS2H9
80
25
SS2H10
UNIT
°C/W
ORDERING INFORMATION
(Example)
PREFERRED P/N
SS2H9-E3/52T
SS2H9-E3/5BT
SS2H9HE3/52T
(1)
SS2H9HE3/5BT
(1)
Note:
(1) Automotive grade AEC Q101 qualified
UNIT WEIGHT (g)
0.096
0.096
0.096
0.096
PREFERRED PACKAGE CODE
52T
5BT
52T
5BT
BASE QUANTITY
750
3200
750
3200
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
2.5
100
Average Forward Current (A)
2.0
Average Forward Current (A)
75
1.5
50
1.0
25
0.5
0
25
50
75
100
125
150
175
0
1
10
100
T
L
- Lead Temperature (°C)
Number
of Cycles at 60 Hz
Figure 1. Forward Current Derating Curve
Figure 2. Max Non-Repetitive Peak Forward Surge Current
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For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88750
Revision: 19-May-08
SS2H9 & SS2H10
Vishay General Semiconductor
100
1000
T
J
= 175 °C
Instantaneous Forward Current (A)
10
1
T
J
= 125 °C
Junction Capacitance (pF)
1.2
1.4
T
J
= 150 °C
100
0.1
T
J
= 25 °C
0.01
0
0.2
0.4
0.6
0.8
1.0
10
0.1
1
10
100
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 3. Typical Instanteous Forward Characteristics
Figure 5. Typical Junction Capacitance
10 000
1000
100
10
1
0.1
0.01
0.001
10
20
30
40
50
60
70
80
90
100
T
J
= 25 °C
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
100
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (µA)
10
1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse
Voltage
(%)
t - Pulse Duration (s)
Figure 4. Typical Reverse Characteristics
Figure 6. Typical Transient Thermal Impedance Per Leg
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-214AA (SMB)
Cathode Band
Mounting Pad Layout
0.085 (2.159) MAX.
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.086 (2.18) MIN.
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
0.060 (1.52) MIN.
0.220 REF.
Document Number: 88750
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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