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A3P1000L-FG256YI

Description
Field Programmable Gate Array, 250MHz, 24576-Cell, CMOS, PBGA256,
CategoryProgrammable logic devices    Programmable logic   
File Size11MB,242 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

A3P1000L-FG256YI Overview

Field Programmable Gate Array, 250MHz, 24576-Cell, CMOS, PBGA256,

A3P1000L-FG256YI Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicrosemi
package instructionBGA, BGA256,16X16,40
Reach Compliance Codeunknown
maximum clock frequency250 MHz
JESD-30 codeS-PBGA-B256
JESD-609 codee0
Humidity sensitivity level3
Number of entries177
Number of logical units24576
Output times177
Number of terminals256
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Encapsulate equivalent codeBGA256,16X16,40
Package shapeSQUARE
Package formGRID ARRAY
Peak Reflow Temperature (Celsius)225
power supply1.2/1.5,1.2/3.3 V
Programmable logic typeFIELD PROGRAMMABLE GATE ARRAY
Certification statusNot Qualified
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead/Silver (Sn/Pb/Ag)
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature20
Base Number Matches1
Revision 13
ProASIC3L Low Power Flash FPGAs
with Flash*Freeze Technology
Features and Benefits
Low Power
• Dramatic Reduction in Dynamic and Static Power Savings
• 1.2 V to 1.5 V Core and I/O Voltage Support for Low Power
• Low Power Consumption in Flash*Freeze Mode Allows for
Instantaneous Entry to / Exit from Low-Power Flash*Freeze
Mode
• Supports Single-Voltage System Operation
• Low-Impedance Switches
• Single-Ended I/O Standards: LVTTL, LVCMOS 3.3 V /
2.5 V / 1.8 V / 1.5 V / 1.2 V, 3.3 V PCI / 3.3 V PCI-X, and
LVCMOS 2.5 V / 5.0 V Input
• Differential I/O Standards: LVPECL, LVDS, B-LVDS, and
M-LVDS
• Voltage-Referenced I/O Standards: GTL+ 2.5 V / 3.3 V, GTL
2.5 V / 3.3 V, HSTL Class I and II, SSTL2 Class I and II, SSTL3
Class I and II (A3PE3000L only)
• Wide Range Power Supply Voltage Support per JESD8-B,
Allowing I/Os to Operate from 2.7 V to 3.6 V
• Wide Range Power Supply Voltage Support per JESD8-12,
Allowing I/Os to Operate from 1.14 V to 1.575 V
• I/O Registers on Input, Output, and Enable Paths
• Hot-Swappable and Cold-Sparing I/Os Programmable Output
Slew Rate and Drive Strength
• Programmable Input Delay (A3PE3000L only)
• Schmitt Trigger Option on Single-Ended Inputs (A3PE3000L)
• Weak Pull-Up/-Down
• IEEE 1149.1 (JTAG) Boundary Scan Test
• Pin-Compatible Packages across the ProASIC
®
3L Family
(except PQ208)
High Capacity
• 250,000 to 3,000,000 System Gates
• Up to 504 kbits of True Dual-Port SRAM
• Up to 620 User I/Os
Reprogrammable Flash Technology
• 130-nm, 7-Layer Metal (6 Copper), Flash-Based CMOS
Process
• Instant On Level 0 Support
• Single-Chip Solution
• Retains Programmed Design when Powered Off
High Performance
• 350 MHz (1.5 V systems) and 250 MHz (1.2 V systems) System
Performance
• 3.3 V, 66 MHz, 66-Bit PCI (1.5 V systems) and 66 MHz, 32-Bit
PCI (1.2 V systems)
Clock Conditioning Circuit (CCC) and PLL
• Six CCC Blocks, One with Integrated PLL (ProASIC3L) and All
with Integrated PLL (ProASIC3EL)
• Configurable Phase Shift, Multiply/Divide, Delay Capabilities,
and External Feedback
• Wide Input Frequency Range 1.5 MHz to 250 MHz (1.2 V
systems) and 350 MHz (1.5 V systems))
In-System Programming (ISP) and Security
• ISP Using On-Chip 128-Bit Advanced Encryption Standard
(AES) Decryption via JTAG (IEEE 1532–compliant)
• FlashLock
®
to Secure FPGA Contents
SRAMs and FIFOs
• Variable-Aspect-Ratio 4,608-Bit RAM Blocks (×1, ×2, ×4, ×9,
and ×18 organizations available)
• True Dual-Port SRAM (except ×18)
• 24 SRAM and FIFO Configurations with Synchronous
Operation:
– 250 MHz: For 1.2 V systems
– 350 MHz: For 1.5 V systems
• ARM Cortex™-M1 Soft Processor Available with or without
Debug
High-Performance Routing Hierarchy
• Segmented, Hierarchical Routing and Clock Structure
• High-Performance, Low-Skew Global Network
• Architecture Supports Ultra-High Utilization
Advanced and Pro (Professional) I/Os
• 700 Mbps DDR, LVDS-Capable I/Os
• 1.2 V, 1.5 V, 1.8 V, 2.5 V, and 3.3 V Mixed-Voltage Operation
• Bank-Selectable I/O Voltages—up to 8 Banks per Chip
ARM
®
Processor Support in ProASIC3L FPGAs
Table 1 • ProASIC3 Low-Power Product Family
ProASIC3L Devices
A3P250L
A3P600L
M1A3P600L
A3P1000L
M1A3P1000L
A3PE3000L
M1A3PE3000L
ARM Cortex-M1
Devices
1
System Gates
VersaTiles (D-flip-flops)
RAM Kbits (1,024 bits)
4,608-Bit Blocks
FlashROM Kbits
Secure (AES) ISP
2
Integrated PLL in CCCs
3
VersaNet Globals
I/O Banks
Maximum User I/Os
Package Pins
VQFP
PQFP
FBGA
250,000
6,144
36
8
1
Yes
1
18
4
157
VQ100
PQ208
FG144, FG256
600,000
13,824
108
24
1
Yes
1
18
4
235
PQ208
FG144, FG256, FG484
1,000,000
24,576
144
32
1
Yes
1
18
4
300
PQ208
FG144, FG256, FG484
3,000,000
75,264
504
112
1
Yes
6
18
8
620
PQ208
3
FG324, FG484, FG896
Notes:
1. Refer to the
Cortex-M1
product brief for more information.
2. AES is not available for ARM Cortex-M1 ProASIC3L devices.
3. For the A3PE3000L, the PQ208 package has six CCCs and two PLLs.
January 2013
© 2013 Microsemi Corporation
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