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BCP54_L99Z

Description
Bipolar small signal sot-223 npn GP amp
Categorysemiconductor    Discrete semiconductor   
File Size201KB,7 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
Download Datasheet Parametric View All

BCP54_L99Z Overview

Bipolar small signal sot-223 npn GP amp

BCP54_L99Z Parametric

Parameter NameAttribute value
MakerFairchild
Product Categorybipolar small signal
RoHSyes
ConfigurationSingle Dual Collec
Transistor polarityNPN
Installation styleSMD/SMT
Package/boxSOT-223
Collector-emitter maximum voltage VCEO45 V
Emitter-Base voltage VEBO5 V
Collector continuous current1.5 A
Maximum DC collector current1.5 A
Power dissipation1.5 W
Maximum operating temperature+ 150 C
EncapsulationReel
Minimum operating temperature- 55 C
BCP54
BCP54
C
E
C
B
SOT-223
NPN General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switching circuits requiring collector currents
to 1.2 A. Sourced from Process 38.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
45
45
5.0
1.5
-55 to +150
Units
V
V
V
A
°C
3
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Max
BCP54
1.5
12
83.3
Units
W
mW/°C
°C/W
1997
Fairchild Semiconductor Corporation

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