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TN2540N3-P013-G

Description
mosfet small signal 400v 12ohm
Categorysemiconductor    Discrete semiconductor   
File Size658KB,6 Pages
ManufacturerSupertex
Environmental Compliance
Download Datasheet Parametric Compare View All

TN2540N3-P013-G Overview

mosfet small signal 400v 12ohm

TN2540N3-P013-G Parametric

Parameter NameAttribute value
MakerSupertex
Product CategoryMOSFET small signal
RoHSyes
ConfigurationSingle
Transistor polarityN-Channel
Resistor drain/source RDS (on)12 Ohms
Drain/source breakdown voltage400 V
Gate/source breakdown voltage+/- 20 V
Drain continuous current175 mA
Power dissipation1 W
Maximum operating temperature+ 150 C
Installation styleThrough Hole
Package/boxTO-92
EncapsulationReel
Minimum operating temperature- 55 C
TN2540
N-Channel Enhancement-Mode
Vertical DMOS FET
Features
Low threshold (2.0V max.)
High input impedance
Low input capacitance (125pF max.)
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Complementary N- and P-channel devices
General Description
This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Applications
Logic level interfaces - ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Ordering Information
Device
TN2540
Package Options
TO-92
TN2540N3-G
TO-243AA (SOT-89)
TN2540N8-G
Die*
TN2540ND
BV
DSS
/BV
DGS
(V)
R
DS(ON)
(max)
(Ω)
I
D(ON)
(min)
(A)
V
GS(th)
(max)
(V)
400
12
1.0
2.0
-G indicates package is RoHS compliant (‘Green’)
* MIL visual screening available
Pin Configurations
DRAIN
SOURCE
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
Value
BV
DSS
BV
DGS
±20V
-55
O
C to +150
O
C
300 C
O
DRAIN
GATE
GATE
SOURCE
DRAIN
TO-92 (N3)
TO-243AA (SOT-89) (N8)
Product Marking
TN
2 5 4 0
YYWW
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*
Distance of 1.6mm from case for 10 seconds.
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
TO-92 (N3)
TN5DW
W = Code for week sealed
= “Green” Packaging
TO-243AA (SOT-89) (N8)
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com

TN2540N3-P013-G Related Products

TN2540N3-P013-G TN2540N3-P014 TN2540N3-P003 TN2540N3-P002-G TN2540N3-P013 TN2540N3-P014-G TN2540N3-P002 TN2540N3-P003-G
Description mosfet small signal 400v 12ohm mosfet small signal 400v 12ohm mosfet small signal 400v 12ohm mosfet small signal 400v 12ohm mosfet small signal 400v 12ohm mosfet small signal 400v 12ohm mosfet small signal 400v 12ohm mosfet small signal 400v 12ohm
Maker Supertex Supertex Supertex Supertex Supertex Supertex Supertex -
Product Category MOSFET small signal MOSFET small signal MOSFET small signal MOSFET small signal MOSFET small signal MOSFET small signal MOSFET small signal -
RoHS yes no no yes no yes no -
Configuration Single Single Single Single Single Single Single -
Transistor polarity N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel -
Resistor drain/source RDS (on) 12 Ohms 12 Ohms 12 Ohms 12 Ohms 12 Ohms 12 Ohms 12 Ohms -
Drain/source breakdown voltage 400 V 400 V 400 V 400 V 400 V 400 V 400 V -
Gate/source breakdown voltage +/- 20 V +/- 20 V +/- 20 V +/- 20 V +/- 20 V +/- 20 V +/- 20 V -
Drain continuous current 175 mA 175 mA 175 mA 175 mA 175 mA 175 mA 175 mA -
Power dissipation 1 W 1 W 1 W 1 W 1 W 1 W 1 W -
Maximum operating temperature + 150 C + 150 C + 150 C + 150 C + 150 C + 150 C + 150 C -
Installation style Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole -
Package/box TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 -
Minimum operating temperature - 55 C - 55 C - 55 C - 55 C - 55 C - 55 C - 55 C -
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