VP3203
P-Channel Enhancement-Mode
Vertical DMOS FET
Features
►
►
►
►
►
►
►
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
High input impedance and high gain
Excellent thermal stability
Integral source-to-drain diode
General Description
The Supertex VP3203 is an enhancement-mode (normally-
off) transistor that utilizes a vertical DMOS structure
and Supertex’s well-proven silicon-gate manufacturing
process. This combination produces a device with the
power handling capabilities of bipolar transistors, and the
high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS
structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Applications
►
►
►
►
►
►
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Ordering Information
Device
VP3203
Package Options
TO-92
VP3203N3-G
TO-243AA (SOT-89)
VP3203N8-G
Die*
VP3203ND
BV
DSS
/BV
DGS
(V)
R
DS(ON)
(max)
(Ω)
I
D(ON)
(min)
(A)
-30
0.6
14.0
-G indicates package is RoHS compliant (‘Green’)
* Mil visual screening available.
Pin Configurations
DRAIN
SOURCE
DRAIN
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
Value
BV
DSS
BV
DGS
±20V
-55
O
C to +150
O
C
300
O
C
GATE
GATE
SOURCE
DRAIN
TO-92 (N3)
TO-243AA (SOT-89) (N8)
Product Marking
Si VP
3 203
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*
Distance of 1.6mm from case for 10 seconds.
Package may or may not include the following marks: Si or
TO-92 (N3)
VP2LW
W = Code for week sealed
= “Green” Packaging
Packages may or may not include the following marks: Si or
TO-243AA (SOT-89) (N8)
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
VP3203
Thermal Characteristics
Package
TO-92
TO-243AA (SOT-89)
†
‡
(continuous)
(mA)
I
D
†
(pulsed)
(A)
I
D
Power Dissipation
@T
A
= 25
O
C
(W)
O
( C/W)
θ
jc
( C/W)
O
θ
ja
(mA)
I
DR
†
I
DRM
(A)
-650
-1100
-4.0
-4.0
0.74
1.6
‡
125
15
170
78
‡
-650
-1100
-4.0
-4.0
I
D
(continuous) is limited by max rated T
j
.
Mounted on FR5 board, 25mm x 25mm x 1.57mm.
A
Electrical Characteristics
(T
Sym
BV
DSS
V
GS(th)
ΔV
GS(th)
I
GSS
I
DSS
I
D(ON)
Parameter
Gate threshold voltage
= 25
O
C unless otherwise specified)
Min
-30
-1.0
-
-
-
Typ
-
-
-
-1.0
-
-
-14
-
-
-
-
-
2000
200
100
45
-
-
-
-
-
300
Max
-
-3.5
-5.5
-100
-10
-1.0
-
1.0
1.0
0.6
0.6
1.0
-
300
120
60
10
15
25
25
-1.6
-
Units
V
V
nA
µA
mA
A
Conditions
V
GS
= 0V, I
D
= -10mA
V
GS
= V
DS
, I
D
= -10mA
V
GS
= ± 20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
DS
= 0.8 Max Rating,
V
GS
= 0V, T
A
= 125°C
V
GS
= -10V, V
DS
= -5.0V
V
GS
= -4.5V, I
D
= -1.5A
V
GS
= -4.5V, I
D
= -750mA
V
GS
= -10V, I
D
= -3.0A
V
GS
= -10V, I
D
= -1.5A
V
GS
= -10V, I
D
= -1.5A
V
GS
= 0V,
V
DS
= -25V,
f = 1.0MHz
V
DD
= -25V,
I
D
= -2.0A,
R
GEN
= 10Ω
V
GS
= 0V, I
SD
= -1.5A
V
GS
= 0V, I
SD
= -1.0A
Drain-to-source breakdown voltage
Change in V
GS(th)
with temperature
Gate body leakage
Zero gate voltage drain current
On-state drain current
TO-92
Static drain-to-source on-state
resistance
Change in R
DS(ON)
with temperature
Forward transductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode forward voltage drop
Reverse recovery time
SOT-89
TO-92
SOT-89
mV/
O
C V
GS
= V
DS
, I
D
= -10mA
-
-
-
-
-
-
-
1000
-
-
-
-
-
-
-
-
-
R
DS(ON)
Ω
ΔR
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
%/
O
C
mmho V
DS
= -25V, I
D
= -2.0A
pF
ns
V
ns
Notes:
1. All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
10%
90%
t
(OFF)
INPUT
-10V
PULSE
GENERATOR
t
(ON)
R
GEN
t
F
INPUT
t
d(ON)
0V
t
r
t
d(OFF)
D.U.T.
Output
R
L
10%
OUTPUT
V
DD
90%
10%
90%
V
DD
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
2
VP3203
Typical Performance Curves
Output Characteristics
-20
-20
Saturation Characteristics
-16
V
GS = -10V
-16
V
GS = -10V
-8V
-12
-8V
I
D
(amperes)
I
D
(amperes)
-12
-8
-8
-6V
-4
-6V
-4
0
0
-5
-10
-15
-20
-4V
-3V
-25
-30
-4V
0
0
-2
-4
-6
-3V
-8
-10
V
DS
(volts)
V
DS
(volts)
Transconductance vs. Drain Current
5
Power Dissipation vs. Ambient Temperature
2.0
V
DS
= -25V
4
1.6
TO-243AA
G
FS
(siemens)
T
A
= 25°C
2
P
D
(watts)
3
T
A
= 125°C
1.2
0.8
TO-92
T
A
= -55°C
1
0.4
0
0
-1
-2
-3
-4
-5
0
0
25
50
75
100
125
150
I
D
(amperes)
T
A
(°C)
Maximum Rated Safe Operating Area
-10
1.0
Thermal Response Characteristics
Thermal Resistance (normalized)
TO-243AA (pulsed)
TO-92 (pulsed)
0.8
I
D
(amperes)
-1.0
TO-243AA(DC)
0.6
TO-243AA
T
A
= 25°C
P
D
= 1.6W
TO-92 (DC)
0.4
-0.1
T
A
= 25
° C
-0.01
-0.1
0.2
-1.0
-10
-100
0
0.001
TO-92
P
D
= 1W
T
C
= 25°C
0.01
0.1
1.0
10
V
DS
(volts)
t
p
(seconds)
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
3
VP3203
Typical Performance Curves
(cont.)
BV
DSS
Variation with Temperature
2.0
1.1
1.6
On-Resistance vs. Drain Current
BV
DSS
(normalized)
V
GS
= -5V
R
DS(ON)
(ohms)
1.2
1.0
V
GS
= -10V
0.8
0.4
0.9
0
-50
0
50
100
150
0
-4
-8
-12
-16
-20
T
j
(°C)
Transfer Characteristics
-10
1.4
-8
I
D
(amperes)
V
(th)
and R
DS
Variation with Temperature
R
DS(ON)
@ -10V, -3A
1.4
I
D
(amperes)
-6
V
DS
= -25V
25°C
125°C
V
GS(th)
(normalized)
1.2
1.2
1.0
1.0
-4
0.8
0.8
-2
0.6
0
V
(th)
@ -10mA
0.6
0
-2
-4
-6
-8
-10
-50
0
50
100
150
V
GS
(volts)
Capacitance vs. Drain-to-Source Voltage
300
-10
T
j
(°C)
Gate Drive Dynamic Characteristics
f = 1MHz
-8
225
C (picofarads)
C
ISS
V
DS
= -10V
150
V
GS
(volts)
-6
V
DS
=
-20V
-4
C
OSS
75
335pF
C
RSS
0
-0
-10
-20
-30
-2
200 pF
0
0
1
V
DS
(volts)
Q
G
(nanocoulombs)
2
3
4
5
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
4
R
DS(ON)
(normalized)
T
A
= -55°C
VP3203
3-Lead TO-92 Package Outline (N3)
D
A
Seating Plane
1
2
3
L
e1
e
b
c
Front View
Side View
E1
E
1
2
3
Bottom View
Symbol
Dimensions
(inches)
MIN
NOM
MAX
A
.170
-
.210
b
.014
†
-
.022
†
c
.014
†
-
.022
†
D
.175
-
.205
E
.125
-
.165
E1
.080
-
.105
e
.095
-
.105
e1
.045
-
.055
L
.500
-
.610*
JEDEC Registration TO-92.
* This dimension is not specified in the JEDEC drawing.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#:
DSPD-3TO92N3, Version E041009.
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
5
Test/Measurement
京公网安备 11010802033920号
EEWORLD
