PNP SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ISSUE 3 JUNE 94
FEATURES
* 0.5 Amp continuous current
* Up to 1.5 Amps peak current
* Very low saturation voltage
* Excellent gain characteristics up to 1 Amp
* Spice model available
ZTX958
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Practical Power Dissipation*
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
totp
P
tot
T
j
:T
stg
-400
-400
-6
-1.5
-0.5
1.58
1.2
E-Line
TO92 Compatible
VALUE
UNIT
V
V
V
A
A
W
W
°C
-55 to +200
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltag
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
SYMBOL
V
(BR)CBO
V
(BR)CER
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CER
R
≤
1K
Ω
I
EBO
V
CE(sat)
V
BE(sat)
3-330
-100
-150
-300
-790
MIN.
-400
-400
-400
-6
TYP.
-600
-600
-550
-8
-50
-1
-50
-1
-10
-150
-200
-400
-900
MAX. UNIT
V
V
V
V
nA
nA
CONDITIONS.
I
C
=-100
µ
A
IC=-1
µ
A, RB
≤
1K
Ω
I
C
=-10mA*
I
E
=-100
µ
A
V
CB
=-300V
V
CB
=-300V, T
amb
=100°C
V
CB
=-300V
V
CB
=-300V, T
amb
=100°C
V
EB
=-6V
I
C
=-10mA, I
B
=-1mA*
I
C
=-100mA, I
B
=-10mA*
I
C
=-500mA, I
B
=-100mA*
I
C
=-500mA, I
B
=-100mA*
µ
A
µ
A
nA
mV
mV
mV
mV
ZTX958
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer Ratio
Transition Frequency
Output Capacitance
Switching Times
SYMBOL
V
BE(on)
h
FE
f
T
C
obo
t
on
t
off
100
100
10
MIN.
TYP.
-690
200
200
20
85
19
104
2400
MAX.
-800
300
MHz
pF
ns
ns
UNIT
mV
CONDITIONS.
IC=-500mA, V
CE
=-10V*
I
C
=-10mA, V
CE
=-10V*
I
C
=-500mA, V
CE
=-10V*
I
C
=-1A, V
CE
=-10V*
I
C
=-100mA, V
CE
=-10V
f=50MHz
V
CB
=-20V, f=1MHz
I
C
=-500mA, I
B1
=-50mA
I
B2
=50mA, V
CC
=-100V
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
THERMAL CHARACTERISTICS
PARAMETER
Thermal Resistance: Junction to Ambient
Junction to Case
SYMBOL
R
th(j-amb)
R
th(j-case)
MAX.
150
50
UNIT
°C/W
°C/W
Max Power Dissipation - (Watts)
4.0
Thermal Resistance (°C/W)
150
t
1
D.C.
D=t
1
/t
P
3.0
Ca
se
100
te
t
P
D=0.6
2.0
m
1.0
Amb
ient t
emp
eratu
-40 -20
0
20 40
pe
ra
tu
re
50
D=0.2
D=0.1
re
60 80 100 120 140 160 180 200
0
0.0001
D=0.05
Single Pulse
0.001
0.01
0.1
1
10
100
T -Temperature
(°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-331
Embedded System
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