VP0104
P-Channel Enhancement-Mode
Vertical DMOS FETs
Features
►
Free from secondary breakdown
►
Low power drive requirement
►
Ease of paralleling
►
Low C
ISS
and fast switching speeds
►
Excellent thermal stability
►
Integral source-to-drain diode
General Description
The Supertex VP0104 is an enhancement-mode (normally-
off) transistor that utilizes a vertical DMOS structure
and Supertex’s well-proven silicon-gate manufacturing
process. This combination produces a device with the
power handling capabilities of bipolar transistors, and the
high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS
structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
►
High input impedance and high gain
Applications
►
Motor controls
►
Converters
►
Amplifiers
►
Switches
►
Power supply circuits
►
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Ordering Information
Device
VP0104
Package Option
TO-92
VP0104N3-G
BV
DSS
/BV
DGS
(V)
R
DS(ON)
(max)
(Ω)
I
D(ON)
(min)
(mA)
-40
8.0
-500
-G indicates package is RoHS compliant (‘Green’)
Pin Configuration
DRAIN
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
Value
BV
DSS
BV
DGS
±20V
-55°C to +150°C
+300°C
SOURCE
GATE
TO-92 (N3)
Product Marking
Si V P
010 4
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
TO-92 (N3)
Package may or may not include the following marks: Si or
Absolute Maximum Ratings are those values beyond which damage to
the device may occur. Functional operation under these conditions is not
implied. Continuous operation of the device at the absolute rating level
may affect device reliability. All voltages are referenced to device ground.
*
Distance of 1.6mm from case for 10 seconds.
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
VP0104
Thermal Characteristics
Package
TO-92
(continuous)
(mA)
I
D
†
(pulsed)
(mA)
I
D
Power Dissipation
@T
C
= 25
O
C
(W)
O
( C/W)
θ
jc
( C/W)
O
θ
ja
(mA)
I
DR
†
(mA)
I
DRM
-250
-800
1.0
125
170
-250
-800
Notes:
† I
D
(continuous) is limited by max rated T
j
.
Electrical Characteristics
(T = 25°C unless otherwise specified)
A
Sym
BV
DSS
V
GS(th)
ΔV
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
ΔR
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Parameter
Drain-to-source breakdown voltage
Gate threshold voltage
Change in V
GS(th)
with temperature
Gate body leakage current
Zero gate voltage drain current
Min
-40
-1.5
-
-
-
-
-0.15
-0.5
-
-
-
150
-
-
-
-
-
-
-
-
-
Typ
-
-
5.8
-1.0
-
-
-0.25
-1.2
11
6.0
0.55
190
45
22
3.0
4.0
3.0
8.0
4.0
-1.2
400
Max
-
-3.5
6.5
-100
-10
-1.0
-
-
15
8.0
1.0
-
60
30
8.0
6.0
10
12
10
-2.0
-
Units
V
V
mV/
O
C
nA
µA
mA
A
Ω
%/
O
C
mmho
pF
Conditions
V
GS
= 0V, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= ±20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
DS
= 0.8 Max Rating,
V
GS
= 0V, T
A
= 125
O
C
V
GS
= -5.0V, V
DS
= -25V
V
GS
= -10V, V
DS
= -25V
V
GS
= -5.0V, I
D
= -100mA
V
GS
= -10V, I
D
= -500mA
V
GS
= -10V, I
D
= -500mA
V
DS
= -25V, I
D
= -500mA
V
GS
= 0V,
V
DS
= -25V,
f = 1.0MHz
V
DD
= -25V,
I
D
= -500mA,
R
GEN
= 25Ω
V
GS
= 0V, I
SD
= -1.0A
V
GS
= 0V, I
SD
= -1.0A
On-state drain current
Static drain-to-source
on-state resistance
Change in R
DS(ON)
with temperature
Forward transconductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode forward voltage drop
Reverse recovery time
ns
V
ns
Notes:
1. All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
10%
90%
t
(OFF)
t
r
t
d(OFF)
t
f
INPUT
-10V
PULSE
GENERATOR
R
GEN
t
(ON)
t
d(ON)
0V
D.U.T.
INPUT
Output
R
L
OUTPUT
V
DD
90%
10%
90%
10%
V
DD
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
2
VP0104
Typical Performance Curves
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
3
VP0104
Typical Performance Curves
(cont.)
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
4
VP0104
3-Lead TO-92 Package Outline (N3)
D
A
Seating Plane
1
2
3
L
e1
e
b
c
Front View
Side View
E1
E
1
2
3
Bottom View
Symbol
Dimensions
(inches)
MIN
NOM
MAX
A
.170
-
.210
b
.014
†
-
.022
†
c
.014
†
-
.022
†
D
.175
-
.205
E
.125
-
.165
E1
.080
-
.105
e
.095
-
.105
e1
.045
-
.055
L
.500
-
.610*
JEDEC Registration TO-92.
* This dimension is not specified in the JEDEC drawing.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#:
DSPD-3TO92N3, Version E041009.
(The package drawing (s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to
http://www.supertex.com/packaging.html.)
Supertex inc.
does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an
adequate “product liability indemnification insurance agreement.”
Supertex inc.
does not assume responsibility for use of devices described, and limits its liability to the
replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications
are subject to change without notice. For the latest product specifications refer to the
Supertex inc.
website: http//www.supertex.com.
©2009
All rights reserved. Unauthorized use or reproduction is prohibited.
Doc.# DSFP-VP0104
A052109
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
5
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