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ZVN0124ZSTZ

Description
mosfet small signal vmos N channel
Categorysemiconductor    Discrete semiconductor   
File Size80KB,3 Pages
ManufacturerAll Sensors
Environmental Compliance
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ZVN0124ZSTZ Overview

mosfet small signal vmos N channel

ZVN0124ZSTZ Parametric

Parameter NameAttribute value
MakerAll Sensors
Product CategoryMOSFET small signal
RoHSyes
Transistor polarityN-Channel
Resistor drain/source RDS (on)16 Ohms
Drain/source breakdown voltage240 V
Gate/source breakdown voltage+/- 20 V
Drain continuous current160 mA
Power dissipation700 mW
Installation styleThrough Hole
Package/boxTO-92
EncapsulationBulk
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 1 – MARCH 94
FEATURES
* 240 Volt V
DS
* R
DS(on)
=16Ω
APPLICATIONS
* Telephone handsets
ZVN0124A
D
G
S
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
VALUE
240
160
2
±
20
700
-55 to +150
UNIT
V
mA
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
SYMBOL MIN.
BV
DSS
V
GS(th)
I
GSS
I
DSS
240
1
3
20
10
100
500
16
100
85
20
7
7
8
16
8
MAX.
UNIT CONDITIONS.
V
V
nA
µA
µA
mA
mS
pF
pF
pF
ns
ns
ns
ns
V
DD
≈25V,
I
D
=250mA
V
DS
=25 V, V
GS
=0V, f=1MHz
I
D
=1mA, V
GS
=0V
ID=1mA, V
DS
= V
GS
V
GS
=± 20V, V
DS
=0V
V
DS
=240 V, V
GS
=0
V
DS
=192 V, V
GS
=0V,
T=125°C
(2)
V
DS
=25 V, V
GS
=10V
V
GS
=10V,I
D
=250mA
V
DS
=25V,I
D
=250mA
I
D(on)
Static Drain-Source On-State R
DS(on)
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
≤2%
(2) Sample test.
3-350
(
3

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Description mosfet small signal vmos N channel mosfet small signal vmos N channel mosfet small signal N-chnl 240v mosfet small signal N-chnl 240v mosfet small signal vmos N channel
Maker All Sensors All Sensors All Sensors All Sensors All Sensors
Product Category MOSFET small signal MOSFET small signal MOSFET small signal MOSFET small signal MOSFET small signal
RoHS yes yes yes yes yes
Transistor polarity N-Channel N-Channel N-Channel N-Channel N-Channel
Resistor drain/source RDS (on) 16 Ohms 16 Ohms 16 Ohms 16 Ohms 16 Ohms
Drain/source breakdown voltage 240 V 240 V 240 V 240 V 240 V
Gate/source breakdown voltage +/- 20 V +/- 20 V +/- 20 V +/- 20 V +/- 20 V
Drain continuous current 160 mA 160 mA 160 mA 160 mA 160 mA
Power dissipation 700 mW 700 mW 700 mW 700 mW 700 mW
Installation style Through Hole Through Hole Through Hole Through Hole Through Hole
Package/box TO-92 TO-92 TO-92 TO-92 TO-92
Encapsulation Bulk Bulk Bulk Bulk Bulk
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