Philips Semiconductors
Product specification
UHF amplifier module
FEATURES
•
26 V nominal supply voltage
•
16 W output power into a load of 50
Ω
with an RF drive
power of
≤20
mW.
APPLICATIONS
•
Base station transmitting equipment operating in the
1805 to 1990 MHz frequency band.
DESCRIPTION
The BGY2016 is a three-stage UHF amplifier module in a
SOT365A package with a plastic cap. It consists of three
NPN silicon planar transistor dies mounted together with
matching and bias circuit components on a metallized
ceramic AlN substrate.
handbook, halfpage
BGY2016
PINNING - SOT365A
PIN
1
2
3
4
Flange
RF input
V
S1
V
S2
RF output
ground
DESCRIPTION
1
2
3
4
MSA447
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at T
mb
= 25
°C.
MODE OF OPERATION
CW
f
(MHz)
1805 to 1990
V
S1
(V)
5
V
S2
(V)
26
P
L
(W)
≥16
G
p
(dB)
≥28
η
(%)
≥30
Z
S
; Z
L
(Ω)
50
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
S1
V
S2
P
D
P
L
T
stg
T
mb
PARAMETER
DC supply voltage
DC supply voltage
input drive power
load power
storage temperature
operating mounting base temperature
T
mb
= 25
°C
CONDITIONS
−
−
−
−30
−10
MIN.
4.5
MAX.
5.5
28
120
20
+100
+90
V
V
mW
W
°C
°C
UNIT
2000 Jan 04
2
Philips Semiconductors
Product specification
UHF amplifier module
APPLICATION INFORMATION
BGY2016
handbook, full pagewidth
C7
C5
C8
C6
Z1
R1
L1
R2
L2
Z2
C3
C1
50
Ω
input
C4
C2
50
Ω
output
MGM861
VS1
VS2
Fig.2 Test circuit.
List of components
(See Figs 2 and 3)
COMPONENT
C1, C2
C3, C4
C5, C6
C7, C8
L1, L2
R1, R2
Z
1
, Z
2
Note
1. The striplines are on a double copper-clad printed-circuit board with epoxy dielectric (ε
r
= 4.5); thickness = 1 mm.
DESCRIPTION
electrolytic capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
Grade 4S2 Ferroxcube bead
metal film resistor
stripline; note 1
VALUE
10
µF;
35 V
10 nF; 50 V
100 pF; 50 V
10 pF; 50 V
−
10
Ω;
0.4 W
50
Ω
−
−
−
−
4330 030 36300
2322 195 13109
−
CATALOGUE NO.
2000 Jan 04
4
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