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BA892H6327

Description
Mixer Diode, L Band, Silicon, ROHS COMPLIANT, SCD-80, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size966KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BA892H6327 Overview

Mixer Diode, L Band, Silicon, ROHS COMPLIANT, SCD-80, 2 PIN

BA892H6327 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
package instructionR-PDSO-F2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Maximum diode capacitance1.4 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
Maximum forward voltage (VF)1 V
frequency bandL BAND
JESD-30 codeR-PDSO-F2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage35 V
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature40
Base Number Matches1
BA592/BA892...
Silicon RF Switching Diode
For band switching in TV/VTR tuners
and mobile applications
Very low forward resistance (typ. 0.45
@ 3 mA)
Small capacitance
Pb-free (RoHS compliant) package
Qualified according AEC Q101
BA592
BA892/-02L
BA892-02V

Type
BA592
BA892
BA892-02L
BA892-02V
Package
SOD323
SCD80
TSLP-2-1
SC79
Configuration
single
single
single, leadless
single
L
S
(nH)
1.8
0.6
0.4
0.6
Marking
blue S
AA
AA
A
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Diode reverse voltage
Forward current
Junction temperature
Operating temperature range
Storage temperature
Symbol
V
R
I
F
T
J
T
op
T
Stg
Value
35
100
150
-55 ... 125
-55 ... 150
Unit
V
mA
°C
1
2011-07-21

BA892H6327 Related Products

BA892H6327 BA592E6433 BA592E6327
Description Mixer Diode, L Band, Silicon, ROHS COMPLIANT, SCD-80, 2 PIN Mixer Diode, Very High Frequency, Silicon, Mixer Diode, Very High Frequency, Silicon,
Is it lead-free? Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to
Maker Infineon Infineon Infineon
package instruction R-PDSO-F2 R-PDSO-G2 R-PDSO-G2
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
Configuration SINGLE SINGLE SINGLE
Maximum diode capacitance 1.4 pF 1.4 pF 1.4 pF
Diode component materials SILICON SILICON SILICON
Diode type MIXER DIODE MIXER DIODE MIXER DIODE
Maximum forward voltage (VF) 1 V 1 V 1 V
frequency band L BAND VERY HIGH FREQUENCY VERY HIGH FREQUENCY
JESD-30 code R-PDSO-F2 R-PDSO-G2 R-PDSO-G2
JESD-609 code e3 e3 e3
Humidity sensitivity level 1 1 1
Number of components 1 1 1
Number of terminals 2 2 2
Maximum operating temperature 125 °C 125 °C 125 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260
Maximum repetitive peak reverse voltage 35 V 35 V 35 V
surface mount YES YES YES
Terminal surface Matte Tin (Sn) MATTE TIN MATTE TIN
Terminal form FLAT GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature 40 40 40
Base Number Matches 1 1 1
Certification status - Not Qualified Not Qualified
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