SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 - AUGUST 1995
PARTMARKING DETAILS
BCW65A EA
BCW65B EB
BCW65C EC
BCW66F EF
BCW66G EG
BCW66H EH
COMPLEMENTARY TYPES
BCW65 BCW67
BCW66 BCW68
BCW65AR
BCW65BR
BCW65CR
BCW66FR
BCW66GR
BCW66HR
4V
5V
6V
7P
5T
7M
BCW65
BCW66
C
B
E
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current(10ms)
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
j
:T
stg
BCW65
60
32
5
800
1000
100
330
-55 to +150
BCW66
75
45
UNIT
V
V
V
mA
mA
mA
mW
°C
3 - 27
BCW65
BCW66
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Emitter
Breakdown Voltage
BCW65
BCW66
BCW65
BCW66
Emitter-Base Breakdown Voltage
Collector-Emitter
Cut-off Current
BCW65
BCW66
Emitter-Base Cut-Off Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Static
Forward
Current
Transfer
I
EBO
V
CE(sat)
V
BE(SAT)
35
75
100
35
50
110
160
60
80
180
250
100
100
8
12
80
2
10
SYMBOL MIN.
V
(BR)CEO
32
45
V
(BR)CES
60
75
V
(BR)EBO
I
CES
5
20
20
20
20
20
TYP.
MAX.
UNIT
CONDITIONS.
V
V
V
µ
A
µ
A
I
CEO
=10mA
I
CEO
=10mA
I
C
=10
µ
A
I
C
=10
µ
A
I
EBO
=10
µ
A
V
CES
= 32V
V
CES
= 32V ,T
amb
=150
o
C
V
CES
= 45V
V
CES
= 45V ,T
amb
=150
o
C
V
EBO
=4V
I
C
=100mA, I
B
=10mA
I
C
= 500mA, I
B
=50mA*
I
C
=500mA, I
B
=50mA*
I
C
=100
µ
A,
I
C
= 10mA,
I
C
=100mA,
I
C
=500mA,
I
C
=100
µ
A,
I
C
= 10mA,
I
C
=100mA,
I
C
=500mA,
I
C
=100
µ
A,
I
C
= 10mA,
I
C
=100mA,
I
C
=500mA,
V
CE
=10V
V
CE
= 1V
V
CE
= 1V*
V
CE
= 2V*
V
CE
=10V
V
CE
= 1V
V
CE
= 1V*
V
CE
= 2V*
V
CE
=10V
V
CE
= 1V
V
CE
= 1V*
V
CE
= 2V*
nA
nA
nA
0.3 V
0.7 V
2
V
BCW65A h
FE
BCW66F
160
250
BCW65B h
FE
BCW66G
250
400
BCW65C h
FE
BCW66H
350
630
Transition Frequency
Collector-Base Capacitance
Emitter-Base Capacitance
Noise Figure
Switching times:
Turn-On Time
Turn-Off Time
f
T
C
cbo
C
ebo
N
MHz I
C
=20mA, V
CE
=10V
f = 100MHz
pF
pF
dB
V
CBO
=10V, f =1MHz
V
EBO
=0.5V, f =1MHz
I
C
= 0.2mA, V
CE
= 5V
R
G
=1k
Ω
I
C
=150mA
I
B1
=- I
B2
=15mA
R
L
=150
Ω
t
on
t
off
100
400
ns
ns
Spice parameter data is available upon request for this device
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
3 - 28
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