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PHP152NQ03LTA

Description
mosFET power rail pwr-mos
CategoryDiscrete semiconductor    The transistor   
File Size84KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric Compare View All

PHP152NQ03LTA Overview

mosFET power rail pwr-mos

PHP152NQ03LTA Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeTO-220AB
package instructionPLASTIC, SC-46, 3 PIN
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Avalanche Energy Efficiency Rating (Eas)560 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage25 V
Maximum drain current (Abs) (ID)75 A
Maximum drain current (ID)75 A
Maximum drain-source on-resistance0.005 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)150 W
Maximum pulsed drain current (IDM)240 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
PHP/B152NQ03LTA
N-channel TrenchMOS™ logic level FET
Rev. 01 — 05 March 2004
Product data
1. Product profile
1.1 Description
Logic level N-channel enhancement mode field-effect transistor in a plastic package
using TrenchMOS™ technology.
1.2 Features
s
Logic level threshold
s
Low gate charge
s
Low on-state resistance
s
Low thermal resistance.
1.3 Applications
s
DC-to-DC converters
s
Switched-mode power supplies.
1.4 Quick reference data
s
V
DS
25 V
s
P
tot
150 W
s
I
D
75 A
s
R
DSon
4 mΩ.
2. Pinning information
Table 1:
1
2
3
mb
Pinning - SOT78 (TO-220AB) and SOT404 (D
2
-PAK), simplified outlines and symbol
Simplified outline
[1]
Pin Description
gate (g)
drain (d)
source (s)
mounting base;
connected to drain (d)
Symbol
mb
d
mb
g
s
MBB076
2
1
MBK106
3
MBK116
1 2 3
SOT78 (TO-220AB)
[1]
It is not possible to make connection to pin 2 of the SOT404 package.
SOT404 (D
2
-PAK)

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PHP152NQ03LTA PHP152NQ03LTA127 P-1005D2640BGBS PHB152NQ03LTA,118 934058431127 PHB152NQ03LTA
Description mosFET power rail pwr-mos MOSFET RAIL PWR-MOS RESISTOR, THIN FILM, 0.25 W, 0.1 %, 15 ppm, 264 ohm, SURFACE MOUNT, 1005, CHIP, ROHS COMPLIANT MOSFET N-CH 25V 75A D2PAK 75A, 25V, 0.005ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN 75A, 25V, 0.005ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3
Is it Rohs certified? conform to - conform to conform to - conform to
package instruction PLASTIC, SC-46, 3 PIN - SMT, 1005 PLASTIC, D2PAK-3 FLANGE MOUNT, R-PSFM-T3 PLASTIC, D2PAK-3
Reach Compliance Code unknown - unknown unknown unknown not_compliant
ECCN code EAR99 - EAR99 EAR99 EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 560 mJ - - 560 mJ 560 mJ 560 mJ
Shell connection DRAIN - - DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE Single - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 25 V - - 25 V 25 V 25 V
Maximum drain current (ID) 75 A - - 75 A 75 A 75 A
Maximum drain-source on-resistance 0.005 Ω - - 0.005 Ω 0.005 Ω 0.005 Ω
FET technology METAL-OXIDE SEMICONDUCTOR - - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSFM-T3 - - R-PSSO-G2 R-PSFM-T3 R-PSSO-G2
JESD-609 code e3 - e4 e3 - e3
Number of components 1 - - 1 1 1
Number of terminals 3 - 2 2 3 2
Operating mode ENHANCEMENT MODE - - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY - - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - - RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT - SMT SMALL OUTLINE FLANGE MOUNT SMALL OUTLINE
Polarity/channel type N-CHANNEL - - N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 240 A - - 240 A 240 A 240 A
surface mount NO - YES YES NO YES
Terminal surface Matte Tin (Sn) - Gold (Au) - with Nickel (Ni) barrier TIN - Matte Tin (Sn)
Terminal form THROUGH-HOLE - - GULL WING THROUGH-HOLE GULL WING
Terminal location SINGLE - - SINGLE SINGLE SINGLE
transistor applications SWITCHING - - SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON - - SILICON SILICON SILICON
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