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BUK9520-55

Description
mosFET power rail pwr-mos
CategoryDiscrete semiconductor    The transistor   
File Size52KB,8 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BUK9520-55 Overview

mosFET power rail pwr-mos

BUK9520-55 Parametric

Parameter NameAttribute value
Source Url Status Check Date2013-06-14 00:00:00
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE, ESD PROTECTION
Avalanche Energy Efficiency Rating (Eas)110 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage55 V
Maximum drain current (Abs) (ID)52 A
Maximum drain current (ID)52 A
Maximum drain-source on-resistance0.02 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)235 pF
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power consumption environment116 W
Maximum power dissipation(Abs)116 W
Maximum pulsed drain current (IDM)208 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)225 ns
Maximum opening time (tons)200 ns
Philips Semiconductors
Product specification
TrenchMOS™ transistor
Logic level FET
GENERAL DESCRIPTION
N-channel enhancement mode logic
level field-effect power transistor in a
plastic envelope using ’trench’
technology. The device features very
low on-state resistance and has
integral zener diodes giving ESD
protection up to 2kV. It is intended for
use in automotive and general
purpose switching applications.
BUK9520-55
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
P
tot
T
j
R
DS(ON)
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
V
GS
= 5 V
MAX.
55
52
116
175
20
UNIT
V
A
W
˚C
mΩ
PINNING - TO220AB
PIN
1
2
3
tab
gate
drain
source
drain
DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
d
g
s
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
±V
GS
I
D
I
D
I
DM
P
tot
T
stg
, T
j
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
CONDITIONS
-
R
GS
= 20 kΩ
-
T
mb
= 25 ˚C
T
mb
= 100 ˚C
T
mb
= 25 ˚C
T
mb
= 25 ˚C
-
MIN.
-
-
-
-
-
-
-
- 55
MAX.
55
55
10
52
37
208
116
175
UNIT
V
V
V
A
A
A
W
˚C
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge capacitor
voltage, all pins
CONDITIONS
Human body model
(100 pF, 1.5 kΩ)
MIN.
-
MAX.
2
UNIT
kV
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
in free air
TYP.
-
60
MAX.
1.29
-
UNIT
K/W
K/W
April 1998
1
Rev 1.100

BUK9520-55 Related Products

BUK9520-55 BUK9520-55,127
Description mosFET power rail pwr-mos MOSFET N-CH 55V 52A TO220AB
Is it Rohs certified? conform to conform to
Maker NXP NXP
Parts packaging code TO-220AB TO-220
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3
Reach Compliance Code unknow unknown
ECCN code EAR99 EAR99
Other features LOGIC LEVEL COMPATIBLE, ESD PROTECTION LOGIC LEVEL COMPATIBLE, ESD PROTECTION
Avalanche Energy Efficiency Rating (Eas) 110 mJ 110 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 55 V 55 V
Maximum drain current (Abs) (ID) 52 A 52 A
Maximum drain current (ID) 52 A 52 A
Maximum drain-source on-resistance 0.02 Ω 0.02 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 235 pF 235 pF
JEDEC-95 code TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power consumption environment 116 W 116 W
Maximum power dissipation(Abs) 116 W 116 W
Maximum pulsed drain current (IDM) 208 A 208 A
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Maximum off time (toff) 225 ns 225 ns
Maximum opening time (tons) 200 ns 200 ns
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