TetraFET
D1211UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A
N
8
D
1
2
C
B
P
7
6
5
3
4
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
10W – 12.5V – 500MHz
SINGLE ENDED
FEATURES
H
K
L
J
E
F
G
M
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
PIN 5 – SOURCE
PIN 6 – GATE
PIN 7 – GATE
PIN 8 – SOURCE
SO8 PACKAGE
PIN 1 – SOURCE
PIN 2 – DRAIN
PIN 3 – DRAIN
PIN 4 – SOURCE
• VERY LOW C
rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
P
mm
4.06
5.08
1.27
0.51
3.56
4.06
1.65
0.76
0.51
1.02
45°
0°
7°
0.20
2.18
4.57
Tol.
±0.08
±0.08
±0.08
±0.08
±0.08
±0.08
±0.08
+0.25
-0.00
Min.
Max.
Max.
Min.
Max.
±0.08
Max.
±0.08
Inches
0.160
0.200
0.050
0.020
0.140
0.160
0.065
0.030
0.020
0.040
45°
0°
7°
0.008
0.086
0.180
Tol.
±0.003
±0.003
±0.003
±0.003
±0.003
±0.003
±0.003
+0.010
-0.000
Min.
Max.
Max.
Min.
Max.
±0.003
Max.
±0.003
APPLICATIONS
•
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Semelab plc.
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
30W
40V
±20V
10A
–65 to 150°C
200°C
Prelim. 12/95
D1211UK
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
BV
DSS
I
DSS
I
GSS
g
fs
G
PS
η
C
iss
C
oss
C
rss
Drain–Source
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Forward Transconductance*
Common Source Power Gain
Drain Efficiency
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0
V
DS
= 12.5V
V
GS
= 20V
I
D
= 10mA
V
DS
= 10V
P
O
= 10W
V
DS
= 12.5V
f = 500MHz
V
DS
= 0V
V
GS
= –5V f = 1MHz
f = 1MHz
f = 1MHz
V
DS
= 12.5V V
GS
= 0
V
DS
= 12.5V V
GS
= 0
I
DQ
= 0.4A
I
D
= 10mA
V
GS
= 0
V
DS
= 0
V
DS
= V
GS
I
D
= 1A
0.5
0.8
10
50
20:1
40
Typ.
Max. Unit
V
1
1
7
mA
µA
V
S
dB
%
—
60
40
4
pF
pF
pF
V
GS(th)
Gate Threshold Voltage*
VSWR Load Mismatch Tolerance
* Pulse Test:
Pulse Duration = 300
µs
, Duty Cycle
≤
2%
THERMAL DATA
R
THj–case
Thermal Resistance Junction – Case
Max. 6°C / W
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 12/95
RF/Wirelessly
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