D1022UK datasheet, PDF - EEWORLD Datasheet

D1022UK: Descriptionmetal gate RF silicon fet; File Size54KB，4 Pages; ManufacturerAll Sensors

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metal gate RF silicon fet

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TetraFET

D1022UK

METAL GATE RF SILICON FET

MECHANICAL DATA

pls)

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

100W – 28V – 500MHz

PUSH–PULL

FEATURES

• SIMPLIFIED AMPLIFIER DESIGN

pls)

• SUITABLE FOR BROAD BAND APPLICATIONS

• LOW C

rss

• SIMPLE BIAS CIRCUITS

• LOW NOISE

PIN 1

PIN 3

PIN 5

SOURCE (COMMON) PIN 2

DRAIN 2

GATE 1

PIN 4

DRAIN 1

GATE 2

DIM

6.45

1.65R

45°

16.51

6.47

18.41

1.52

4.82

24.76

1.52

0.81R

0.13

2.16

Tol.

0.13

5°

0.76

0.13

0.02

0.13

Inches

0.254

0.65R

45°

0.650

0.255

0.725

0.060

0.190

0.975

0.060

0.032R

0.005

0.085

Tol.

0.005

5°

0.03

0.005

0.001

0.005

• HIGH GAIN – 10 dB MINIMUM

APPLICATIONS

•

HF/VHF/UHF COMMUNICATIONS

from 1 MHz to 500 MHz

ABSOLUTE MAXIMUM RATINGS

case

= 25°C unless otherwise stated)

DSS

GSS

D(sat)

stg

Power Dissipation

Drain – Source Breakdown Voltage

Gate – Source Breakdown Voltage

Drain Current

Storage Temperature

Maximum Operating Junction Temperature

292W

70V

±20V

15A

–65 to 150°C

200°C

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail:

sales@semelab.co.uk

Website:

http://www.semelab.co.uk

Prelim.11/00

D1022UK Related Products

	D1022UK	D1022
Description	metal gate RF silicon fet	metal gate RF silicon fet

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